Surface Potential Calculator

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VLSI Material Optimization

Analog VLSI Design

✖Source Body Potential Difference is calculated when an externally applied potential is equal to the sum of voltage drop across the oxide layer and the voltage drop across the semiconductor.ⓘ Source Body Potential Difference [V_sb]			+10% -10%
✖Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.ⓘ Acceptor Concentration [N_A]			+10% -10%
✖Intrinsic Concentration refers to the concentration of charge carriers (electrons and holes) in an intrinsic semiconductor at thermal equilibrium.ⓘ Intrinsic Concentration [N_i]			+10% -10%

✖Surface Potential is a key parameter in evaluating the DC property of thin-film transistors.ⓘ Surface Potential [Φ_s]

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Formula

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Surface Potential

Formula

`"Φ"_{"s"} = 2*"V"_{"sb"}*ln("N"_{"A"}/"N"_{"i"})`

Example

`"36.56754V"=2*"1.36V"*ln("1e+16/cm³"/"1.45e+10/cm³")`

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Surface Potential Solution

STEP 0: Pre-Calculation Summary

Formula Used

Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)
Φ_s = 2*V_sb*ln(N_A/N_i)
This formula uses 1 Functions, 4 Variables

Functions Used

ln - The natural logarithm, also known as the logarithm to the base e, is the inverse function of the natural exponential function., ln(Number)

Variables Used

Surface Potential - (Measured in Volt) - Surface Potential is a key parameter in evaluating the DC property of thin-film transistors.
Source Body Potential Difference - (Measured in Volt) - Source Body Potential Difference is calculated when an externally applied potential is equal to the sum of voltage drop across the oxide layer and the voltage drop across the semiconductor.
Acceptor Concentration - (Measured in 1 per Cubic Meter) - Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.
Intrinsic Concentration - (Measured in 1 per Cubic Meter) - Intrinsic Concentration refers to the concentration of charge carriers (electrons and holes) in an intrinsic semiconductor at thermal equilibrium.

STEP 1: Convert Input(s) to Base Unit

Source Body Potential Difference: 1.36 Volt --> 1.36 Volt No Conversion Required
Acceptor Concentration: 1E+16 1 per Cubic Centimeter --> 1E+22 1 per Cubic Meter (Check conversion here)
Intrinsic Concentration: 14500000000 1 per Cubic Centimeter --> 1.45E+16 1 per Cubic Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

Φ_s = 2*V_sb*ln(N_A/N_i) --> 2*1.36*ln(1E+22/1.45E+16)

Evaluating ... ...

Φ_s = 36.5675358441665

STEP 3: Convert Result to Output's Unit

36.5675358441665 Volt --> No Conversion Required

FINAL ANSWER

36.5675358441665 ≈ 36.56754 Volt <-- Surface Potential

(Calculation completed in 00.004 seconds)

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Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

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< 25 VLSI Material Optimization Calculators

Bulk Depletion Region Charge Density VLSI

Go Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))

Body Effect Coefficient

Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))

Junction Built-in Voltage VLSI

Go Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)

PN Junction Depletion Depth with Source VLSI

Go P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))

Total Source Parasitic Capacitance

Go Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)

Short Channel Saturation Current VLSI

Go Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage

Junction Current

Go Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)

Surface Potential

Go Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)

Threshold Voltage when Source is at Body Potential

Go Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage

DIBL Coefficient

Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential

Threshold Voltage

Go Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)

Gate Capacitance

Go Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)

Subthreshold Slope

Go Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)

Channel Charge

Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

Gate Length using Gate Oxide Capacitance

Go Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)

Gate Oxide Capacitance

Go Capacitance of Gate Oxide Layer = Gate Capacitance/(Gate Width*Gate Length)

Oxide Capacitance after Full Scaling VLSI

Go Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor

Critical Voltage

Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

Gate Oxide Thickness after Full Scaling VLSI

Go Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor

Intrinsic Gate Capacitance

Go MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width

Channel Length after Full Scaling VLSI

Go Channel Length after Full Scaling = Channel Length/Scaling Factor

Junction Depth after Full Scaling VLSI

Go Junction Depth after Full Scaling = Junction Depth/Scaling Factor

Channel Width after Full Scaling VLSI

Go Channel Width after Full Scaling = Channel Width/Scaling Factor

Mobility in Mosfet

Go Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer

K-Prime

Go K Prime = Mobility in MOSFET*Capacitance of Gate Oxide Layer

Surface Potential Formula

Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)
Φ_s = 2*V_sb*ln(N_A/N_i)

Why do we calculate surface potential?

Surface potential is calculated to determine the voltage level at the semiconductor surface. It helps assess device performance, threshold voltage, and power consumption in CMOS transistors, aiding in circuit design and optimization.

How to Calculate Surface Potential?

Surface Potential calculator uses Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration) to calculate the Surface Potential, The Surface potential formula is defined as is a key parameter in evaluating the DC property of thin-film transistors. The externally applied potential is equal to the voltage drop across the oxide layer plus the voltage drop across the semiconductor. Surface Potential is denoted by Φ_s symbol.

How to calculate Surface Potential using this online calculator? To use this online calculator for Surface Potential, enter Source Body Potential Difference (V_sb), Acceptor Concentration (N_A) & Intrinsic Concentration (N_i) and hit the calculate button. Here is how the Surface Potential calculation can be explained with given input values -> 36.56754 = 2*1.36*ln(1E+22/1.45E+16).

FAQ

What is Surface Potential?

The Surface potential formula is defined as is a key parameter in evaluating the DC property of thin-film transistors. The externally applied potential is equal to the voltage drop across the oxide layer plus the voltage drop across the semiconductor and is represented as Φ_s = 2*V_sb*ln(N_A/N_i) or Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration). Source Body Potential Difference is calculated when an externally applied potential is equal to the sum of voltage drop across the oxide layer and the voltage drop across the semiconductor, Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material & Intrinsic Concentration refers to the concentration of charge carriers (electrons and holes) in an intrinsic semiconductor at thermal equilibrium.

How to calculate Surface Potential?

The Surface potential formula is defined as is a key parameter in evaluating the DC property of thin-film transistors. The externally applied potential is equal to the voltage drop across the oxide layer plus the voltage drop across the semiconductor is calculated using Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration). To calculate Surface Potential, you need Source Body Potential Difference (V_sb), Acceptor Concentration (N_A) & Intrinsic Concentration (N_i). With our tool, you need to enter the respective value for Source Body Potential Difference, Acceptor Concentration & Intrinsic Concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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