Threshold Voltage when Source is at Body Potential Solution

STEP 0: Pre-Calculation Summary
Formula Used
Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage
Vt0 = η*Vds+Vt
This formula uses 4 Variables
Variables Used
Threshold Voltage DIBL - (Measured in Volt) - Threshold Voltage dibl is defined as the minimum voltage required by the source junction of the body potential, when source is at body potential.
DIBL Coefficient - DIBL coefficient in a cmos device is resprented typically on the order of 0.1.
Drain to Source Potential - (Measured in Volt) - Drain to source Potential is potential between drain and source.
Threshold Voltage - (Measured in Volt) - Threshold voltage of transistor is the minimum gate to source voltage required to create conducting path between the source and drain terminals.
STEP 1: Convert Input(s) to Base Unit
DIBL Coefficient: 0.2 --> No Conversion Required
Drain to Source Potential: 1.45 Volt --> 1.45 Volt No Conversion Required
Threshold Voltage: 0.3 Volt --> 0.3 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Vt0 = η*Vds+Vt --> 0.2*1.45+0.3
Evaluating ... ...
Vt0 = 0.59
STEP 3: Convert Result to Output's Unit
0.59 Volt --> No Conversion Required
FINAL ANSWER
0.59 Volt <-- Threshold Voltage DIBL
(Calculation completed in 00.004 seconds)

Credits

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Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
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Go Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))
Body Effect Coefficient
Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))
Junction Built-in Voltage VLSI
Go Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)
PN Junction Depletion Depth with Source VLSI
Go P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))
Total Source Parasitic Capacitance
Go Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)
Short Channel Saturation Current VLSI
Go Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage
Junction Current
Go Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)
Surface Potential
Go Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)
Threshold Voltage when Source is at Body Potential
Go Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage
DIBL Coefficient
Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential
Threshold Voltage
Go Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)
Gate Capacitance
Go Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)
Subthreshold Slope
Go Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)
Channel Charge
Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)
Gate Length using Gate Oxide Capacitance
Go Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)
Gate Oxide Capacitance
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Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length
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Go Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor
Intrinsic Gate Capacitance
Go MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width
Channel Length after Full Scaling VLSI
Go Channel Length after Full Scaling = Channel Length/Scaling Factor
Junction Depth after Full Scaling VLSI
Go Junction Depth after Full Scaling = Junction Depth/Scaling Factor
Channel Width after Full Scaling VLSI
Go Channel Width after Full Scaling = Channel Width/Scaling Factor
Mobility in Mosfet
Go Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer
K-Prime
Go K Prime = Mobility in MOSFET*Capacitance of Gate Oxide Layer

Threshold Voltage when Source is at Body Potential Formula

Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage
Vt0 = η*Vds+Vt

What is drain-induced barrier lowering(DIBL)?

The drain voltage Vds creates an electric field that affects the threshold voltage. This drain-induced barrier lowering (DIBL) effect is especially pronounced in short-channel transistors. Drain-induced barrier lowering causes Ids to increase with Vds in saturation, in much the same way as channel length modulation does. Again, this is a bane for analog design but insignificant for most digital circuits. More significantly, DIBL increases subthreshold leakage at high Vds.

How to Calculate Threshold Voltage when Source is at Body Potential?

Threshold Voltage when Source is at Body Potential calculator uses Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage to calculate the Threshold Voltage DIBL, The Threshold voltage when source is at body potential is calculated when source is at body potential(Vto) which is equal to minimum voltage required by the source junction. Threshold Voltage DIBL is denoted by Vt0 symbol.

How to calculate Threshold Voltage when Source is at Body Potential using this online calculator? To use this online calculator for Threshold Voltage when Source is at Body Potential, enter DIBL Coefficient (η), Drain to Source Potential (Vds) & Threshold Voltage (Vt) and hit the calculate button. Here is how the Threshold Voltage when Source is at Body Potential calculation can be explained with given input values -> 0.3368 = 0.2*1.45+0.3 .

FAQ

What is Threshold Voltage when Source is at Body Potential?
The Threshold voltage when source is at body potential is calculated when source is at body potential(Vto) which is equal to minimum voltage required by the source junction and is represented as Vt0 = η*Vds+Vt or Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage. DIBL coefficient in a cmos device is resprented typically on the order of 0.1, Drain to source Potential is potential between drain and source & Threshold voltage of transistor is the minimum gate to source voltage required to create conducting path between the source and drain terminals.
How to calculate Threshold Voltage when Source is at Body Potential?
The Threshold voltage when source is at body potential is calculated when source is at body potential(Vto) which is equal to minimum voltage required by the source junction is calculated using Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage. To calculate Threshold Voltage when Source is at Body Potential, you need DIBL Coefficient (η), Drain to Source Potential (Vds) & Threshold Voltage (Vt). With our tool, you need to enter the respective value for DIBL Coefficient, Drain to Source Potential & Threshold Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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