Transition Frequency of MOSFET Calculator

✖Transconductance is defined as the ratio of the change in the output current to the change in the input voltage, with the gate-source voltage held constant.ⓘ Transconductance [g_m]			+10% -10%
✖The source gate capacitance is a measure of the capacitance between the source and gate electrodes in a field-effect transistor (FET).ⓘ Source Gate Capacitance [C_sg]			+10% -10%
✖Gate-drain capacitance is a parasitic capacitance that exists between the gate and drain electrodes of a field-effect transistor (FET).ⓘ Gate-Drain Capacitance [C_gd]			+10% -10%

✖The Transition frequency is a term that describes the rate or frequency at which a change or transition occurs from one state to another.ⓘ Transition Frequency of MOSFET [f_t]

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Formula

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Transition Frequency of MOSFET

Formula

`"f"_{"t"} = "g"_{"m"}/(2*pi*("C"_{"sg"}+"C"_{"gd"}))`

Example

`"5.249174Hz"="0.5mS"/(2*pi*("8.16μF"+"7μF"))`

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Transition Frequency of MOSFET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Transition Frequency = Transconductance/(2*pi*(Source Gate Capacitance+Gate-Drain Capacitance))
f_t = g_m/(2*pi*(C_sg+C_gd))
This formula uses 1 Constants, 4 Variables

Constants Used

pi - Archimedes' constant Value Taken As 3.14159265358979323846264338327950288

Variables Used

Transition Frequency - (Measured in Hertz) - The Transition frequency is a term that describes the rate or frequency at which a change or transition occurs from one state to another.
Transconductance - (Measured in Siemens) - Transconductance is defined as the ratio of the change in the output current to the change in the input voltage, with the gate-source voltage held constant.
Source Gate Capacitance - (Measured in Farad) - The source gate capacitance is a measure of the capacitance between the source and gate electrodes in a field-effect transistor (FET).
Gate-Drain Capacitance - (Measured in Farad) - Gate-drain capacitance is a parasitic capacitance that exists between the gate and drain electrodes of a field-effect transistor (FET).

STEP 1: Convert Input(s) to Base Unit

Transconductance: 0.5 Millisiemens --> 0.0005 Siemens (Check conversion here)
Source Gate Capacitance: 8.16 Microfarad --> 8.16E-06 Farad (Check conversion here)
Gate-Drain Capacitance: 7 Microfarad --> 7E-06 Farad (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

f_t = g_m/(2*pi*(C_sg+C_gd)) --> 0.0005/(2*pi*(8.16E-06+7E-06))

Evaluating ... ...

f_t = 5.24917358482504

STEP 3: Convert Result to Output's Unit

5.24917358482504 Hertz --> No Conversion Required

FINAL ANSWER

5.24917358482504 ≈ 5.249174 Hertz <-- Transition Frequency

(Calculation completed in 00.020 seconds)

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Home » Engineering » Electronics » MOSFET » Analog Electronics » Internal Capacitive Effects and High Frequency Model » Transition Frequency of MOSFET

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Created by Payal Priya

Birsa Institute of Technology (BIT), Sindri

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National Institute Of Technology (NIT), Hamirpur

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< 15 Internal Capacitive Effects and High Frequency Model Calculators

Conductance of Channel of MOSFETs

Go Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*(Channel Width/Channel Length)*Voltage across Oxide

Transition Frequency of MOSFET

Go Transition Frequency = Transconductance/(2*pi*(Source Gate Capacitance+Gate-Drain Capacitance))

Magnitude of Electron Charge in Channel of MOSFET

Go Electron Charge in Channel = Oxide Capacitance*Channel Width*Channel Length*Effective Voltage

Lower Critical Frequency of Mosfet

Go Corner Frequency = 1/(2*pi*(Resistance+Input Resistance)*Capacitance)

Phase Shift in Output RC Circuit

Go Phase Shift = arctan(Capacitive Reactance/(Resistance+Load Resistance))

Output Miller Capacitance Mosfet

Go Output Miller Capacitance = Gate-Drain Capacitance*((Voltage Gain+1)/Voltage Gain)

Total Capacitance between Gate and Channel of MOSFETs

Go Gate Channel Capacitance = Oxide Capacitance*Channel Width*Channel Length

Gate to Source Channel Width of MOSFET

Go Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length)

Overlap Capacitance of MOSFET

Go Overlap Capacitance = Channel Width*Oxide Capacitance*Overlap Length

Critical Frequency in High Frequency Input RC Circuit

Go Corner Frequency = 1/(2*pi*Input Resistance*Miller Capacitance)

Phase Shift in Input RC Circuit

Go Phase Shift = arctan(Capacitive Reactance/Input Resistance)

Capacitive Reactance of Mosfet

Go Capacitive Reactance = 1/(2*pi*Frequency*Capacitance)

Critical Frequency of Mosfet

Go Critical Frequency in decibles = 10*log10(Critical Frequency)

Miller Capacitance of Mosfet

Go Miller Capacitance = Gate-Drain Capacitance*(Voltage Gain+1)

Attenuation of RC Circuit

Go Attenuation = Base Voltage/Input Voltage

< 15 MOSFET Characterstics Calculators

Conductance of Channel of MOSFET using Gate to Source Voltage

Go Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage)

Voltage Gain given Load Resistance of MOSFET

Go Voltage Gain = Transconductance*(1/(1/Load Resistance+1/Output Resistance))/(1+Transconductance*Source Resistance)

Transition Frequency of MOSFET

Go Transition Frequency = Transconductance/(2*pi*(Source Gate Capacitance+Gate-Drain Capacitance))

Maximum Voltage Gain at Bias Point

Go Maximum Voltage Gain = 2*(Supply Voltage-Effective Voltage)/(Effective Voltage)

Voltage Gain using Small Signal

Go Voltage Gain = Transconductance*1/(1/Load Resistance+1/Finite Resistance)

Gate to Source Channel Width of MOSFET

Go Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length)

Voltage Gain given Drain Voltage

Go Voltage Gain = (Drain Current*Load Resistance*2)/Effective Voltage

Body Effect on Transconductance

Go Body Transconductance = Change in Threshold to Base Voltage*Transconductance

Saturation Voltage of MOSFET

Go Drain and Source Saturation Voltage = Gate-Source Voltage-Threshold Voltage

Bias Voltage of MOSFET

Go Total Instantaneous Bias Voltage = DC Bias Voltage+DC Voltage

Maximum Voltage Gain given all Voltages

Go Maximum Voltage Gain = (Supply Voltage-0.3)/Thermal Voltage

Amplification Factor in Small Signal MOSFET Model

Go Amplification Factor = Transconductance*Output Resistance

Treshold Voltage of MOSFET

Go Threshold Voltage = Gate-Source Voltage-Effective Voltage

Transconductance in MOSFET

Go Transconductance = (2*Drain Current)/Overdrive Voltage

Conductance in Linear Resistance of MOSFET

Go Conductance of Channel = 1/Linear Resistance

Transition Frequency of MOSFET Formula

Transition Frequency = Transconductance/(2*pi*(Source Gate Capacitance+Gate-Drain Capacitance))
f_t = g_m/(2*pi*(C_sg+C_gd))

Why MOSFET is used for high frequency application?

MOSFETs can operate at high frequencies, they can perform fast switching applications with little turn-off losses. When compared to the IGBT, a power MOSFET has the advantages of higher commutation speed and greater efficiency during operation at low voltages.

How to Calculate Transition Frequency of MOSFET?

Transition Frequency of MOSFET calculator uses Transition Frequency = Transconductance/(2*pi*(Source Gate Capacitance+Gate-Drain Capacitance)) to calculate the Transition Frequency, The Transition frequency of MOSFET formula is defined as a measure of the high-frequency operating characteristics of a transistor. The frequency of the radiation associated with a transition between hyperfine structure energy states of an atom. Transition Frequency is denoted by f_t symbol.

How to calculate Transition Frequency of MOSFET using this online calculator? To use this online calculator for Transition Frequency of MOSFET, enter Transconductance (g_m), Source Gate Capacitance (C_sg) & Gate-Drain Capacitance (C_gd) and hit the calculate button. Here is how the Transition Frequency of MOSFET calculation can be explained with given input values -> 5.249174 = 0.0005/(2*pi*(8.16E-06+7E-06)).

FAQ

What is Transition Frequency of MOSFET?

The Transition frequency of MOSFET formula is defined as a measure of the high-frequency operating characteristics of a transistor. The frequency of the radiation associated with a transition between hyperfine structure energy states of an atom and is represented as f_t = g_m/(2*pi*(C_sg+C_gd)) or Transition Frequency = Transconductance/(2*pi*(Source Gate Capacitance+Gate-Drain Capacitance)). Transconductance is defined as the ratio of the change in the output current to the change in the input voltage, with the gate-source voltage held constant, The source gate capacitance is a measure of the capacitance between the source and gate electrodes in a field-effect transistor (FET) & Gate-drain capacitance is a parasitic capacitance that exists between the gate and drain electrodes of a field-effect transistor (FET).

How to calculate Transition Frequency of MOSFET?

The Transition frequency of MOSFET formula is defined as a measure of the high-frequency operating characteristics of a transistor. The frequency of the radiation associated with a transition between hyperfine structure energy states of an atom is calculated using Transition Frequency = Transconductance/(2*pi*(Source Gate Capacitance+Gate-Drain Capacitance)). To calculate Transition Frequency of MOSFET, you need Transconductance (g_m), Source Gate Capacitance (C_sg) & Gate-Drain Capacitance (C_gd). With our tool, you need to enter the respective value for Transconductance, Source Gate Capacitance & Gate-Drain Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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