Built in Potential at Depletion Region Solution

STEP 0: Pre-Calculation Summary
Formula Used
Built in Voltage = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(-2*Bulk Fermi Potential)))
ΦB0 = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*NA*modulus(-2*Φf)))
This formula uses 2 Constants, 2 Functions, 3 Variables
Constants Used
[Permitivity-silicon] - Permittivity of silicon Value Taken As 11.7
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19
Functions Used
sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)
modulus - Modulus of a number is the remainder when that number is divided by another number., modulus
Variables Used
Built in Voltage - (Measured in Volt) - Built in Voltage is a characteristic voltage that exists across a semiconductor device.
Doping Concentration of Acceptor - (Measured in Electrons per Cubic Meter) - Doping Concentration of Acceptor refers to the concentration of acceptor atoms intentionally added to a semiconductor material.
Bulk Fermi Potential - (Measured in Volt) - Bulk Fermi Potential is a parameter that describes the electrostatic potential in the bulk (interior) of a semiconductor material.
STEP 1: Convert Input(s) to Base Unit
Doping Concentration of Acceptor: 1.32 Electrons per Cubic Centimeter --> 1320000 Electrons per Cubic Meter (Check conversion ​here)
Bulk Fermi Potential: 0.25 Volt --> 0.25 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
ΦB0 = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*NA*modulus(-2*Φf))) --> -(sqrt(2*[Charge-e]*[Permitivity-silicon]*1320000*modulus(-2*0.25)))
Evaluating ... ...
ΦB0 = -1.57302306783086E-06
STEP 3: Convert Result to Output's Unit
-1.57302306783086E-06 Volt --> No Conversion Required
FINAL ANSWER
-1.57302306783086E-06 -1.6E-6 Volt <-- Built in Voltage
(Calculation completed in 00.004 seconds)
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Created by banuprakash
Dayananda Sagar College of Engineering (DSCE), Bangalore
banuprakash has created this Calculator and 50+ more calculators!
Verified by Dipanjona Mallick
Heritage Insitute of technology (HITK), Kolkata
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<MOS Transistor Calculators

Sidewall Voltage Equivalence Factor
​ Go Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage)))
Fermi Potential for P Type
​ Go Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)
Equivalent Large Signal Junction Capacitance
​ Go Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor
Zero Bias Sidewall Junction Capacitance per Unit Length
​ Go Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall

Built in Potential at Depletion Region Formula

Built in Voltage = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(-2*Bulk Fermi Potential)))
ΦB0 = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*NA*modulus(-2*Φf)))

What is the significance of the built-in potential in the depletion region in p-n junctions?

The built-in potential is a crucial parameter that influences the behavior of a p-n junction. It determines the electrostatics of the junction and plays a key role in device characteristics, such as the barrier for majority carriers and the overall behavior in thermal equilibrium.

How to Calculate Built in Potential at Depletion Region?

Built in Potential at Depletion Region calculator uses Built in Voltage = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(-2*Bulk Fermi Potential))) to calculate the Built in Voltage, The Built in Potential at Depletion Region formula is defined as the voltage established across this depleted region when the p-n junction is in thermal equilibrium. Built in Voltage is denoted by ΦB0 symbol.

How to calculate Built in Potential at Depletion Region using this online calculator? To use this online calculator for Built in Potential at Depletion Region, enter Doping Concentration of Acceptor (NA) & Bulk Fermi Potential f) and hit the calculate button. Here is how the Built in Potential at Depletion Region calculation can be explained with given input values -> -1.6E-6 = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*1320000*modulus(-2*0.25))).

FAQ

What is Built in Potential at Depletion Region?
The Built in Potential at Depletion Region formula is defined as the voltage established across this depleted region when the p-n junction is in thermal equilibrium and is represented as ΦB0 = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*NA*modulus(-2*Φf))) or Built in Voltage = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(-2*Bulk Fermi Potential))). Doping Concentration of Acceptor refers to the concentration of acceptor atoms intentionally added to a semiconductor material & Bulk Fermi Potential is a parameter that describes the electrostatic potential in the bulk (interior) of a semiconductor material.
How to calculate Built in Potential at Depletion Region?
The Built in Potential at Depletion Region formula is defined as the voltage established across this depleted region when the p-n junction is in thermal equilibrium is calculated using Built in Voltage = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(-2*Bulk Fermi Potential))). To calculate Built in Potential at Depletion Region, you need Doping Concentration of Acceptor (NA) & Bulk Fermi Potential f). With our tool, you need to enter the respective value for Doping Concentration of Acceptor & Bulk Fermi Potential and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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