Fermi Potential for P Type Solution

STEP 0: Pre-Calculation Summary
Formula Used
Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)
ΦFp = ([BoltZ]*Ta)/[Charge-e]*ln(ni/NA)
This formula uses 2 Constants, 1 Functions, 4 Variables
Constants Used
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19
[BoltZ] - Boltzmann constant Value Taken As 1.38064852E-23
Functions Used
ln - The natural logarithm, also known as the logarithm to the base e, is the inverse function of the natural exponential function., ln(Number)
Variables Used
Fermi Potential for P Type - (Measured in Volt) - Fermi Potential for P Type is the energy level representing the highest energy electrons in the valence band at thermal equilibrium.
Absolute Temperature - (Measured in Kelvin) - Absolute Temperature is a measure of the thermal energy in a system and is measured in kelvins.
Intrinsic Carrier Concentration - (Measured in Electrons per Cubic Meter) - Intrinsic Carrier Concentration is a fundamental property of a semiconductor material and represents the concentration of thermally generated charge carriers in the absence of any external influences.
Doping Concentration of Acceptor - (Measured in Electrons per Cubic Meter) - Doping Concentration of Acceptor refers to the concentration of acceptor atoms intentionally added to a semiconductor material.
STEP 1: Convert Input(s) to Base Unit
Absolute Temperature: 24.5 Kelvin --> 24.5 Kelvin No Conversion Required
Intrinsic Carrier Concentration: 3000000 Electrons per Cubic Meter --> 3000000 Electrons per Cubic Meter No Conversion Required
Doping Concentration of Acceptor: 1.32 Electrons per Cubic Centimeter --> 1320000 Electrons per Cubic Meter (Check conversion ​here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
ΦFp = ([BoltZ]*Ta)/[Charge-e]*ln(ni/NA) --> ([BoltZ]*24.5)/[Charge-e]*ln(3000000/1320000)
Evaluating ... ...
ΦFp = 0.00173329185218156
STEP 3: Convert Result to Output's Unit
0.00173329185218156 Volt --> No Conversion Required
FINAL ANSWER
0.00173329185218156 0.001733 Volt <-- Fermi Potential for P Type
(Calculation completed in 00.004 seconds)

Credits

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Created by banuprakash
Dayananda Sagar College of Engineering (DSCE), Bangalore
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Verified by Dipanjona Mallick
Heritage Insitute of technology (HITK), Kolkata
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21 MOS Transistor Calculators

Sidewall Voltage Equivalence Factor
​ Go Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage)))
Pull down Current in Linear Region
​ Go Linear Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(2*(Gate Source Voltage-Threshold Voltage)*Output Voltage-Output Voltage^2))
Node Voltage at Given Instance
​ Go Node Voltage at Given Instance = (Transconductance Factor/Node Capacitance)*int(exp(-(1/(Node Resistance*Node Capacitance))*(Time Period-x))*Current Flowing into Node*x,x,0,Time Period)
Pull down Current in Saturation Region
​ Go Saturation Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(Gate Source Voltage-Threshold Voltage)^2)
Saturation Time
​ Go Saturation Time = -2*Load Capacitance/(Transconductance Process Parameter*(High Output Voltage-Threshold Voltage)^2)*int(1,x,High Output Voltage,High Output Voltage-Threshold Voltage)
Drain Current Flowing through MOS Transistor
​ Go Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage)
Time Delay when NMOS Operates in Linear Region
​ Go Linear Region in Time Delay = -2*Junction Capacitance*int(1/(Transconductance Process Parameter*(2*(Input Voltage-Threshold Voltage)*x-x^2)),x,Initial Voltage,Final Voltage)
Depletion Region Charge Density
​ Go Density of Depletion Layer Charge = (sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(Surface Potential-Bulk Fermi Potential)))
Depth of Depletion Region Associated with Drain
​ Go Drain's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*(Built in Junction Potential+Drain Source Voltage))/([Charge-e]*Doping Concentration of Acceptor))
Drain Current in Saturation Region in MOS Transistor
​ Go Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length)
Fermi Potential for P Type
​ Go Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)
Maximum Depletion Depth
​ Go Maximum Depletion Depth = sqrt((2*[Permitivity-silicon]*modulus(2*Bulk Fermi Potential))/([Charge-e]*Doping Concentration of Acceptor))
Fermi Potential for N Type
​ Go Fermi Potential for N Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Donor Dopant Concentration/Intrinsic Carrier Concentration)
Equivalent Large Signal Capacitance
​ Go Equivalent Large Signal Capacitance = (1/(Final Voltage-Initial Voltage))*int(Junction Capacitance*x,x,Initial Voltage,Final Voltage)
Built in Potential at Depletion Region
​ Go Built in Voltage = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(-2*Bulk Fermi Potential)))
Depth of Depletion Region Associated with Source
​ Go Source's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*Built in Junction Potential)/([Charge-e]*Doping Concentration of Acceptor))
Substrate Bias Coefficient
​ Go Substrate Bias Coefficient = sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor)/Oxide Capacitance
Average Power Dissipated over Period of Time
​ Go Average Power = (1/Total Time Taken)*int(Voltage*Current,x,0,Total Time Taken)
Equivalent Large Signal Junction Capacitance
​ Go Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor
Work Function in MOSFET
​ Go Work Function = Vaccum Level+(Conduction Band Energy Level-Fermi Level)
Zero Bias Sidewall Junction Capacitance per Unit Length
​ Go Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall

Fermi Potential for P Type Formula

Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)
ΦFp = ([BoltZ]*Ta)/[Charge-e]*ln(ni/NA)

What is the significance of the Fermi potential in p-type semiconductors?

The Fermi potential plays a crucial role in determining the population of charge carriers in a semiconductor. It influences the conductivity and electrical properties of p-type materials.

How to Calculate Fermi Potential for P Type?

Fermi Potential for P Type calculator uses Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor) to calculate the Fermi Potential for P Type, The Fermi Potential for P Type formula is defined as is the energy level representing the highest energy electrons in the valence band at thermal equilibrium. Fermi Potential for P Type is denoted by ΦFp symbol.

How to calculate Fermi Potential for P Type using this online calculator? To use this online calculator for Fermi Potential for P Type, enter Absolute Temperature (Ta), Intrinsic Carrier Concentration (ni) & Doping Concentration of Acceptor (NA) and hit the calculate button. Here is how the Fermi Potential for P Type calculation can be explained with given input values -> 0.000173 = ([BoltZ]*24.5)/[Charge-e]*ln(3000000/1320000).

FAQ

What is Fermi Potential for P Type?
The Fermi Potential for P Type formula is defined as is the energy level representing the highest energy electrons in the valence band at thermal equilibrium and is represented as ΦFp = ([BoltZ]*Ta)/[Charge-e]*ln(ni/NA) or Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor). Absolute Temperature is a measure of the thermal energy in a system and is measured in kelvins, Intrinsic Carrier Concentration is a fundamental property of a semiconductor material and represents the concentration of thermally generated charge carriers in the absence of any external influences & Doping Concentration of Acceptor refers to the concentration of acceptor atoms intentionally added to a semiconductor material.
How to calculate Fermi Potential for P Type?
The Fermi Potential for P Type formula is defined as is the energy level representing the highest energy electrons in the valence band at thermal equilibrium is calculated using Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor). To calculate Fermi Potential for P Type, you need Absolute Temperature (Ta), Intrinsic Carrier Concentration (ni) & Doping Concentration of Acceptor (NA). With our tool, you need to enter the respective value for Absolute Temperature, Intrinsic Carrier Concentration & Doping Concentration of Acceptor and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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