Equivalent Large Signal Junction Capacitance Calculator

✖Perimeter of Sidewall is the length of sidewall.ⓘ Perimeter of Sidewall [P]			+10% -10%
✖Sidewall Junction Capacitance refers to the capacitance associated with the sidewall of a semiconductor junction.ⓘ Sidewall Junction Capacitance [C_jsw]			+10% -10%
✖Sidewall Voltage Equivalence Factor represents the relationship between the voltage applied to a semiconductor device and the resulting change in sidewall junction capacitance per unit area.ⓘ Sidewall Voltage Equivalence Factor [K_eq(sw)]			+10% -10%

✖Equivalent Large Signal Junction Capacitance is a concept used in circuit analysis where multiple capacitors are combined into a single equivalent large signal capacitance.ⓘ Equivalent Large Signal Junction Capacitance [C_eq(sw)]

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Formula

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Equivalent Large Signal Junction Capacitance

Formula

`"C"_{"eq(sw)"} = "P"*"C"_{"jsw"}*"K"_{"eq(sw)"}`

Example

`"1.5E^-21F"="0.0025m"*"2.9E^-15F"*"0.00021"`

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Equivalent Large Signal Junction Capacitance Solution

STEP 0: Pre-Calculation Summary

Formula Used

Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor
C_eq(sw) = P*C_jsw*K_eq(sw)
This formula uses 4 Variables

Variables Used

Equivalent Large Signal Junction Capacitance - (Measured in Farad) - Equivalent Large Signal Junction Capacitance is a concept used in circuit analysis where multiple capacitors are combined into a single equivalent large signal capacitance.
Perimeter of Sidewall - (Measured in Meter) - Perimeter of Sidewall is the length of sidewall.
Sidewall Junction Capacitance - (Measured in Farad) - Sidewall Junction Capacitance refers to the capacitance associated with the sidewall of a semiconductor junction.
Sidewall Voltage Equivalence Factor - Sidewall Voltage Equivalence Factor represents the relationship between the voltage applied to a semiconductor device and the resulting change in sidewall junction capacitance per unit area.

STEP 1: Convert Input(s) to Base Unit

Perimeter of Sidewall: 0.0025 Meter --> 0.0025 Meter No Conversion Required
Sidewall Junction Capacitance: 2.9E-15 Farad --> 2.9E-15 Farad No Conversion Required
Sidewall Voltage Equivalence Factor: 0.00021 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_eq(sw) = P*C_jsw*K_eq(sw) --> 0.0025*2.9E-15*0.00021

Evaluating ... ...

C_eq(sw) = 1.5225E-21

STEP 3: Convert Result to Output's Unit

1.5225E-21 Farad --> No Conversion Required

FINAL ANSWER

1.5225E-21 ≈ 1.5E-21 Farad <-- Equivalent Large Signal Junction Capacitance

(Calculation completed in 00.004 seconds)

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< 21 MOS Transistor Calculators

Sidewall Voltage Equivalence Factor

Go Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage)))

Pull down Current in Linear Region

Go Linear Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(2*(Gate Source Voltage-Threshold Voltage)*Output Voltage-Output Voltage^2))

Node Voltage at Given Instance

Go Node Voltage at Given Instance = (Transconductance Factor/Node Capacitance)*int(exp(-(1/(Node Resistance*Node Capacitance))*(Time Period-x))*Current Flowing into Node*x,x,0,Time Period)

Pull down Current in Saturation Region

Go Saturation Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(Gate Source Voltage-Threshold Voltage)^2)

Saturation Time

Go Saturation Time = -2*Load Capacitance/(Transconductance Process Parameter*(High Output Voltage-Threshold Voltage)^2)*int(1,x,High Output Voltage,High Output Voltage-Threshold Voltage)

Drain Current Flowing through MOS Transistor

Go Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage)

Time Delay when NMOS Operates in Linear Region

Go Linear Region in Time Delay = -2*Junction Capacitance*int(1/(Transconductance Process Parameter*(2*(Input Voltage-Threshold Voltage)*x-x^2)),x,Initial Voltage,Final Voltage)

Depletion Region Charge Density

Go Density of Depletion Layer Charge = (sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(Surface Potential-Bulk Fermi Potential)))

Depth of Depletion Region Associated with Drain

Go Drain's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*(Built in Junction Potential+Drain Source Voltage))/([Charge-e]*Doping Concentration of Acceptor))

Drain Current in Saturation Region in MOS Transistor

Go Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length)

Fermi Potential for P Type

Go Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)

Maximum Depletion Depth

Go Maximum Depletion Depth = sqrt((2*[Permitivity-silicon]*modulus(2*Bulk Fermi Potential))/([Charge-e]*Doping Concentration of Acceptor))

Fermi Potential for N Type

Go Fermi Potential for N Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Donor Dopant Concentration/Intrinsic Carrier Concentration)

Equivalent Large Signal Capacitance

Go Equivalent Large Signal Capacitance = (1/(Final Voltage-Initial Voltage))*int(Junction Capacitance*x,x,Initial Voltage,Final Voltage)

Built in Potential at Depletion Region

Go Built in Voltage = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(-2*Bulk Fermi Potential)))

Depth of Depletion Region Associated with Source

Go Source's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*Built in Junction Potential)/([Charge-e]*Doping Concentration of Acceptor))

Substrate Bias Coefficient

Go Substrate Bias Coefficient = sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor)/Oxide Capacitance

Average Power Dissipated over Period of Time

Go Average Power = (1/Total Time Taken)*int(Voltage*Current,x,0,Total Time Taken)

Equivalent Large Signal Junction Capacitance

Go Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor

Work Function in MOSFET

Go Work Function = Vaccum Level+(Conduction Band Energy Level-Fermi Level)

Zero Bias Sidewall Junction Capacitance per Unit Length

Go Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall

Equivalent Large Signal Junction Capacitance Formula

Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor
C_eq(sw) = P*C_jsw*K_eq(sw)

What is the significance of Equivalent Large Signal Junction Capacitance in transistor modeling?

In transistor modeling, equivalent large signal junction capacitance is crucial for accurately representing the dynamic behavior of the device, especially in transient or switching scenarios.

How to Calculate Equivalent Large Signal Junction Capacitance?

Equivalent Large Signal Junction Capacitance calculator uses Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor to calculate the Equivalent Large Signal Junction Capacitance, The Equivalent Large Signal Junction Capacitance formula is defined as a concept used in circuit analysis where multiple capacitors are combined into a single equivalent capacitor. Equivalent Large Signal Junction Capacitance is denoted by C_eq(sw) symbol.

How to calculate Equivalent Large Signal Junction Capacitance using this online calculator? To use this online calculator for Equivalent Large Signal Junction Capacitance, enter Perimeter of Sidewall (P), Sidewall Junction Capacitance (C_jsw) & Sidewall Voltage Equivalence Factor (K_eq(sw)) and hit the calculate button. Here is how the Equivalent Large Signal Junction Capacitance calculation can be explained with given input values -> 3.7E-17 = 0.0025*2.9E-15*0.00021.

FAQ

What is Equivalent Large Signal Junction Capacitance?

The Equivalent Large Signal Junction Capacitance formula is defined as a concept used in circuit analysis where multiple capacitors are combined into a single equivalent capacitor and is represented as C_eq(sw) = P*C_jsw*K_eq(sw) or Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor. Perimeter of Sidewall is the length of sidewall, Sidewall Junction Capacitance refers to the capacitance associated with the sidewall of a semiconductor junction & Sidewall Voltage Equivalence Factor represents the relationship between the voltage applied to a semiconductor device and the resulting change in sidewall junction capacitance per unit area.

How to calculate Equivalent Large Signal Junction Capacitance?

The Equivalent Large Signal Junction Capacitance formula is defined as a concept used in circuit analysis where multiple capacitors are combined into a single equivalent capacitor is calculated using Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor. To calculate Equivalent Large Signal Junction Capacitance, you need Perimeter of Sidewall (P), Sidewall Junction Capacitance (C_jsw) & Sidewall Voltage Equivalence Factor (K_eq(sw)). With our tool, you need to enter the respective value for Perimeter of Sidewall, Sidewall Junction Capacitance & Sidewall Voltage Equivalence Factor and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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