Zero Bias Sidewall Junction Capacitance per Unit Length Calculator

✖Zero Bias Sidewall Junction Potential is the built-in potential in the sidewall junction of certain transistor structures.ⓘ Zero Bias Sidewall Junction Potential [C_j0sw]			+10% -10%
✖Depth of Sidewall refers to the distance from the surface of a structure or material to a specified point within the sidewall.ⓘ Depth of Sidewall [x_j]			+10% -10%

✖Sidewall Junction Capacitance refers to the capacitance associated with the sidewall of a semiconductor junction.ⓘ Zero Bias Sidewall Junction Capacitance per Unit Length [C_jsw]

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Formula

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Zero Bias Sidewall Junction Capacitance per Unit Length

Formula

`"C"_{"jsw"} = "C"_{"j0sw"}*"x"_{"j"}`

Example

`"2.9E^-15F"="4.6E^-10F"*"6.32μm"`

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Zero Bias Sidewall Junction Capacitance per Unit Length Solution

STEP 0: Pre-Calculation Summary

Formula Used

Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall
C_jsw = C_j0sw*x_j
This formula uses 3 Variables

Variables Used

Sidewall Junction Capacitance - (Measured in Farad) - Sidewall Junction Capacitance refers to the capacitance associated with the sidewall of a semiconductor junction.
Zero Bias Sidewall Junction Potential - (Measured in Farad) - Zero Bias Sidewall Junction Potential is the built-in potential in the sidewall junction of certain transistor structures.
Depth of Sidewall - (Measured in Meter) - Depth of Sidewall refers to the distance from the surface of a structure or material to a specified point within the sidewall.

STEP 1: Convert Input(s) to Base Unit

Zero Bias Sidewall Junction Potential: 4.6E-10 Farad --> 4.6E-10 Farad No Conversion Required
Depth of Sidewall: 6.32 Micrometer --> 6.32E-06 Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_jsw = C_j0sw*x_j --> 4.6E-10*6.32E-06

Evaluating ... ...

C_jsw = 2.9072E-15

STEP 3: Convert Result to Output's Unit

2.9072E-15 Farad --> No Conversion Required

FINAL ANSWER

2.9072E-15 ≈ 2.9E-15 Farad <-- Sidewall Junction Capacitance

(Calculation completed in 00.020 seconds)

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< 21 MOS Transistor Calculators

Sidewall Voltage Equivalence Factor

Go Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage)))

Pull down Current in Linear Region

Go Linear Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(2*(Gate Source Voltage-Threshold Voltage)*Output Voltage-Output Voltage^2))

Node Voltage at Given Instance

Go Node Voltage at Given Instance = (Transconductance Factor/Node Capacitance)*int(exp(-(1/(Node Resistance*Node Capacitance))*(Time Period-x))*Current Flowing into Node*x,x,0,Time Period)

Pull down Current in Saturation Region

Go Saturation Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(Gate Source Voltage-Threshold Voltage)^2)

Saturation Time

Go Saturation Time = -2*Load Capacitance/(Transconductance Process Parameter*(High Output Voltage-Threshold Voltage)^2)*int(1,x,High Output Voltage,High Output Voltage-Threshold Voltage)

Drain Current Flowing through MOS Transistor

Go Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage)

Time Delay when NMOS Operates in Linear Region

Go Linear Region in Time Delay = -2*Junction Capacitance*int(1/(Transconductance Process Parameter*(2*(Input Voltage-Threshold Voltage)*x-x^2)),x,Initial Voltage,Final Voltage)

Depletion Region Charge Density

Go Density of Depletion Layer Charge = (sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(Surface Potential-Bulk Fermi Potential)))

Depth of Depletion Region Associated with Drain

Go Drain's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*(Built in Junction Potential+Drain Source Voltage))/([Charge-e]*Doping Concentration of Acceptor))

Drain Current in Saturation Region in MOS Transistor

Go Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length)

Fermi Potential for P Type

Go Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)

Maximum Depletion Depth

Go Maximum Depletion Depth = sqrt((2*[Permitivity-silicon]*modulus(2*Bulk Fermi Potential))/([Charge-e]*Doping Concentration of Acceptor))

Fermi Potential for N Type

Go Fermi Potential for N Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Donor Dopant Concentration/Intrinsic Carrier Concentration)

Equivalent Large Signal Capacitance

Go Equivalent Large Signal Capacitance = (1/(Final Voltage-Initial Voltage))*int(Junction Capacitance*x,x,Initial Voltage,Final Voltage)

Built in Potential at Depletion Region

Go Built in Voltage = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(-2*Bulk Fermi Potential)))

Depth of Depletion Region Associated with Source

Go Source's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*Built in Junction Potential)/([Charge-e]*Doping Concentration of Acceptor))

Substrate Bias Coefficient

Go Substrate Bias Coefficient = sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor)/Oxide Capacitance

Average Power Dissipated over Period of Time

Go Average Power = (1/Total Time Taken)*int(Voltage*Current,x,0,Total Time Taken)

Equivalent Large Signal Junction Capacitance

Go Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor

Work Function in MOSFET

Go Work Function = Vaccum Level+(Conduction Band Energy Level-Fermi Level)

Zero Bias Sidewall Junction Capacitance per Unit Length

Go Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall

Zero Bias Sidewall Junction Capacitance per Unit Length Formula

Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall
C_jsw = C_j0sw*x_j

How is sidewall capacitance related to the overall capacitance of a transistor?

Sidewall capacitance contributes to the overall capacitance of a transistor, which is a crucial parameter in determining the device's speed and power consumption.

How to Calculate Zero Bias Sidewall Junction Capacitance per Unit Length?

Zero Bias Sidewall Junction Capacitance per Unit Length calculator uses Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall to calculate the Sidewall Junction Capacitance, The Zero Bias Sidewall Junction Capacitance per Unit Length formula is defined as the capacitance associated with the sidewall of a semiconductor junction. Sidewall Junction Capacitance is denoted by C_jsw symbol.

How to calculate Zero Bias Sidewall Junction Capacitance per Unit Length using this online calculator? To use this online calculator for Zero Bias Sidewall Junction Capacitance per Unit Length, enter Zero Bias Sidewall Junction Potential (C_j0sw) & Depth of Sidewall (x_j) and hit the calculate button. Here is how the Zero Bias Sidewall Junction Capacitance per Unit Length calculation can be explained with given input values -> 2.9E-15 = 4.6E-10*6.32E-06.

FAQ

What is Zero Bias Sidewall Junction Capacitance per Unit Length?

The Zero Bias Sidewall Junction Capacitance per Unit Length formula is defined as the capacitance associated with the sidewall of a semiconductor junction and is represented as C_jsw = C_j0sw*x_j or Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall. Zero Bias Sidewall Junction Potential is the built-in potential in the sidewall junction of certain transistor structures & Depth of Sidewall refers to the distance from the surface of a structure or material to a specified point within the sidewall.

How to calculate Zero Bias Sidewall Junction Capacitance per Unit Length?

The Zero Bias Sidewall Junction Capacitance per Unit Length formula is defined as the capacitance associated with the sidewall of a semiconductor junction is calculated using Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall. To calculate Zero Bias Sidewall Junction Capacitance per Unit Length, you need Zero Bias Sidewall Junction Potential (C_j0sw) & Depth of Sidewall (x_j). With our tool, you need to enter the respective value for Zero Bias Sidewall Junction Potential & Depth of Sidewall and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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