Cell Capacitance Solution

STEP 0: Pre-Calculation Summary
Formula Used
Cell Capacitance = (Bit Capacitance*2*Voltage Swing on Bitline)/(Positive Voltage-(Voltage Swing on Bitline*2))
Ccell = (Cbit*2*ΔV)/(Vdd-(ΔV*2))
This formula uses 4 Variables
Variables Used
Cell Capacitance - (Measured in Farad) - Cell Capacitance is the capacitance of individual cell.
Bit Capacitance - (Measured in Farad) - Bit Capacitance is one bit's Capacitance in cmos vlsi.
Voltage Swing on Bitline - (Measured in Volt) - Voltage Swing on Bitline is defined as full-swing local bitline SRAM architecture, which is based on the 22-nm FinFET technology for low-voltage operation.
Positive Voltage - (Measured in Volt) - The positive voltage is defined as the voltage calculated when the circuit is connected to the power supply.It is usually called Vdd or power supply of the circuit.
STEP 1: Convert Input(s) to Base Unit
Bit Capacitance: 12.38 Picofarad --> 1.238E-11 Farad (Check conversion ​here)
Voltage Swing on Bitline: 0.42 Volt --> 0.42 Volt No Conversion Required
Positive Voltage: 2.58 Volt --> 2.58 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Ccell = (Cbit*2*ΔV)/(Vdd-(ΔV*2)) --> (1.238E-11*2*0.42)/(2.58-(0.42*2))
Evaluating ... ...
Ccell = 5.97655172413793E-12
STEP 3: Convert Result to Output's Unit
5.97655172413793E-12 Farad -->5.97655172413793 Picofarad (Check conversion ​here)
FINAL ANSWER
5.97655172413793 5.976552 Picofarad <-- Cell Capacitance
(Calculation completed in 00.004 seconds)

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19 Array Datapath Subsystem Calculators

Carry-Looker Adder Delay
​ Go Carry-Looker Adder Delay = Propagation Delay+Group Propagation Delay+((N-Input AND Gate-1)+(K-Input AND Gate-1))*AND-OR Gate Delay+XOR Delay
Multiplexer Delay
​ Go Multiplexer Delay = (Carry-Skip Adder Delay-(Propagation Delay+(2*(N-Input AND Gate-1)*AND-OR Gate Delay)-XOR Delay))/(K-Input AND Gate-1)
Carry-Skip Adder Delay
​ Go Carry-Skip Adder Delay = Propagation Delay+2*(N-Input AND Gate-1)*AND-OR Gate Delay+(K-Input AND Gate-1)*Multiplexer Delay+XOR Delay
Carry-Increamentor Adder Delay
​ Go Carry-Incrementor Adder Delay = Propagation Delay+Group Propagation Delay+(K-Input AND Gate-1)*AND-OR Gate Delay+XOR Delay
Critical Delay in Gates
​ Go Critical Delay in Gates = Propagation Delay+(N-Input AND Gate+(K-Input AND Gate-2))*AND-OR Gate Delay+Multiplexer Delay
Group Propagation Delay
​ Go Propagation Delay = Tree Adder Delay-(log2(Absolute Frequency)*AND-OR Gate Delay+XOR Delay)
Tree Adder Delay
​ Go Tree Adder Delay = Propagation Delay+log2(Absolute Frequency)*AND-OR Gate Delay+XOR Delay
Cell Capacitance
​ Go Cell Capacitance = (Bit Capacitance*2*Voltage Swing on Bitline)/(Positive Voltage-(Voltage Swing on Bitline*2))
Bit Capacitance
​ Go Bit Capacitance = ((Positive Voltage*Cell Capacitance)/(2*Voltage Swing on Bitline))-Cell Capacitance
Voltage Swing On Bitline
​ Go Voltage Swing on Bitline = (Positive Voltage/2)*Cell Capacitance/(Cell Capacitance+Bit Capacitance)
Ground Capacitance
​ Go Ground Capacitance = ((Agressor Voltage*Adjacent Capacitance)/Victim Voltage)-Adjacent Capacitance
'XOR' Delay
​ Go XOR Delay = Ripple Time-(Propagation Delay+(Gates on Critical Path-1)*AND-OR Gate Delay)
Carry-Ripple Adder Critical Path Delay
​ Go Ripple Time = Propagation Delay+(Gates on Critical Path-1)*AND-OR Gate Delay+XOR Delay
Area of Memory Containing N Bits
​ Go Area of Memory Cell = (Area of One Bit Memory Cell*Absolute Frequency)/Array Efficiency
Area of Memory Cell
​ Go Area of One Bit Memory Cell = (Array Efficiency*Area of Memory Cell)/Absolute Frequency
Array Efficiency
​ Go Array Efficiency = (Area of One Bit Memory Cell*Absolute Frequency)/Area of Memory Cell
N-Bit Carry-Skip Adder
​ Go N-bit Carry Skip Adder = N-Input AND Gate*K-Input AND Gate
K-Input 'And' Gate
​ Go K-Input AND Gate = N-bit Carry Skip Adder/N-Input AND Gate
N-Input 'And' Gate
​ Go N-Input AND Gate = N-bit Carry Skip Adder/K-Input AND Gate

Cell Capacitance Formula

Cell Capacitance = (Bit Capacitance*2*Voltage Swing on Bitline)/(Positive Voltage-(Voltage Swing on Bitline*2))
Ccell = (Cbit*2*ΔV)/(Vdd-(ΔV*2))

How does various capacitances vary in dynamic RAM or DRAM?

The DRAM capacitor Ccell must be as physically small as possible to achieve good density. However, the bitline is contacted to many DRAM cells and has a relatively large capacitance Cbit. Therefore, the cell capacitance is typically much smaller than the bitline capacitance. a large cell capacitance is important to provide a reasonable voltage swing. It also is necessary to retain the contents of the cell for an acceptably long time and to minimize soft errors.

How to Calculate Cell Capacitance?

Cell Capacitance calculator uses Cell Capacitance = (Bit Capacitance*2*Voltage Swing on Bitline)/(Positive Voltage-(Voltage Swing on Bitline*2)) to calculate the Cell Capacitance, The Cell Capacitance formula is defined as how quickly the membrane potential can respond to a change in current. A capacitor is made up of two conducting materials separated by an insulator in the case of a cell, the extracellular and intracellular fluids are the conductors, and the lipid membrane is the insulator. Cell Capacitance is denoted by Ccell symbol.

How to calculate Cell Capacitance using this online calculator? To use this online calculator for Cell Capacitance, enter Bit Capacitance (Cbit), Voltage Swing on Bitline (ΔV) & Positive Voltage (Vdd) and hit the calculate button. Here is how the Cell Capacitance calculation can be explained with given input values -> 6E+12 = (1.238E-11*2*0.42)/(2.58-(0.42*2)).

FAQ

What is Cell Capacitance?
The Cell Capacitance formula is defined as how quickly the membrane potential can respond to a change in current. A capacitor is made up of two conducting materials separated by an insulator in the case of a cell, the extracellular and intracellular fluids are the conductors, and the lipid membrane is the insulator and is represented as Ccell = (Cbit*2*ΔV)/(Vdd-(ΔV*2)) or Cell Capacitance = (Bit Capacitance*2*Voltage Swing on Bitline)/(Positive Voltage-(Voltage Swing on Bitline*2)). Bit Capacitance is one bit's Capacitance in cmos vlsi, Voltage Swing on Bitline is defined as full-swing local bitline SRAM architecture, which is based on the 22-nm FinFET technology for low-voltage operation & The positive voltage is defined as the voltage calculated when the circuit is connected to the power supply.It is usually called Vdd or power supply of the circuit.
How to calculate Cell Capacitance?
The Cell Capacitance formula is defined as how quickly the membrane potential can respond to a change in current. A capacitor is made up of two conducting materials separated by an insulator in the case of a cell, the extracellular and intracellular fluids are the conductors, and the lipid membrane is the insulator is calculated using Cell Capacitance = (Bit Capacitance*2*Voltage Swing on Bitline)/(Positive Voltage-(Voltage Swing on Bitline*2)). To calculate Cell Capacitance, you need Bit Capacitance (Cbit), Voltage Swing on Bitline (ΔV) & Positive Voltage (Vdd). With our tool, you need to enter the respective value for Bit Capacitance, Voltage Swing on Bitline & Positive Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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