Current in Inversion Channel of PMOS Calculator

✖Width of junction is the parameter which signifies how wide is the base junction of any analog electronics element.ⓘ Width of Junction [W]			+10% -10%
✖Inversion layer charge refers to the accumulation of charge carriers at the interface between the semiconductor and the insulating oxide layer when a voltage is applied to the gate electrode.ⓘ Inversion Layer Charge [Q_p]			+10% -10%
✖The drift velocity of inversion layer in a MOSFET is the average velocity of the electrons that make up the inversion layer as they move through the material under the influence of an electric field.ⓘ Drift Velocity of Inversion [V_y]			+10% -10%

✖Drain current is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).ⓘ Current in Inversion Channel of PMOS [I_d]

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Formula

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Current in Inversion Channel of PMOS

Formula

`"I"_{"d"} = ("W"*"Q"_{"p"}*"V"_{"y"})`

Example

`"29.59649mA"=("1.19m"*"0.0017C/m²"*"1463cm/s")`

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Current in Inversion Channel of PMOS Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain Current = (Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion)
I_d = (W*Q_p*V_y)
This formula uses 4 Variables

Variables Used

Drain Current - (Measured in Ampere) - Drain current is the electric current flowing from the drain to the source of a field-effect transistor (FET) or a metal-oxide-semiconductor field-effect transistor (MOSFET).
Width of Junction - (Measured in Meter) - Width of junction is the parameter which signifies how wide is the base junction of any analog electronics element.
Inversion Layer Charge - (Measured in Coulomb per Square Meter) - Inversion layer charge refers to the accumulation of charge carriers at the interface between the semiconductor and the insulating oxide layer when a voltage is applied to the gate electrode.
Drift Velocity of Inversion - (Measured in Meter per Second) - The drift velocity of inversion layer in a MOSFET is the average velocity of the electrons that make up the inversion layer as they move through the material under the influence of an electric field.

STEP 1: Convert Input(s) to Base Unit

Width of Junction: 1.19 Meter --> 1.19 Meter No Conversion Required
Inversion Layer Charge: 0.0017 Coulomb per Square Meter --> 0.0017 Coulomb per Square Meter No Conversion Required
Drift Velocity of Inversion: 1463 Centimeter per Second --> 14.63 Meter per Second (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_d = (W*Q_p*V_y) --> (1.19*0.0017*14.63)

Evaluating ... ...

I_d = 0.02959649

STEP 3: Convert Result to Output's Unit

0.02959649 Ampere -->29.59649 Milliampere (Check conversion here)

FINAL ANSWER

29.59649 Milliampere <-- Drain Current

(Calculation completed in 00.004 seconds)

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Home » Engineering » Electronics » MOSFET » Analog Electronics » P-Channel Enhancement » Current in Inversion Channel of PMOS

Credits

Created by Aman Dhussawat

GURU TEGH BAHADUR INSTITUTE OF TECHNOLOGY (GTBIT), NEW DELHI

Aman Dhussawat has created this Calculator and 50+ more calculators!

Verified by Parminder Singh

Chandigarh University (CU), Punjab

Parminder Singh has verified this Calculator and 600+ more calculators!

< 14 P-Channel Enhancement Calculators

Overall Drain Current of PMOS Transistor

Go Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2*(1+Voltage between Drain and Source/modulus(Early Voltage))

Drain Current in Triode Region of PMOS Transistor

Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2)

Body Effect in PMOS

Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))

Drain Current in Triode Region of PMOS Transistor given Vsd

Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source

Drain Current in Saturation Region of PMOS Transistor

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2

Backgate Effect Parameter in PMOS

Go Backgate Effect Parameter = sqrt(2*[Permitivity-vacuum]*[Charge-e]*Donor Concentration)/Oxide Capacitance

Drain Current from Source to Drain

Go Drain Current = (Width of Junction*Inversion Layer Charge*Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel)

Inversion Layer Charge at Pinch-Off Condition in PMOS

Go Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage-Voltage between Drain and Source)

Drain Current in Saturation Region of PMOS Transistor given Vov

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2

Inversion Layer Charge in PMOS

Go Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage)

Current in Inversion Channel of PMOS

Go Drain Current = (Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion)

Current in Inversion Channel of PMOS given Mobility

Go Drift Velocity of Inversion = Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel

Overdrive Voltage of PMOS

Go Effective Voltage = Voltage between Gate and Source-modulus(Threshold Voltage)

Process Transconductance Parameter of PMOS

Go Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance

Current in Inversion Channel of PMOS Formula

Drain Current = (Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion)
I_d = (W*Q_p*V_y)

What is PMOS channel?

A p-channel metal-oxide semiconductor (pMOS) transistor is one in which p-type dopants are used in the gate region (the "channel"). A negative voltage on the gate turns the device on.

How to Calculate Current in Inversion Channel of PMOS?

Current in Inversion Channel of PMOS calculator uses Drain Current = (Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion) to calculate the Drain Current, The Current in Inversion Channel of PMOS formula is defined as the current in the inversion channel is an important parameter for PMOS transistor operation as it determines the functionality of the transistor, such as its gain and output characteristics. Drain Current is denoted by I_d symbol.

How to calculate Current in Inversion Channel of PMOS using this online calculator? To use this online calculator for Current in Inversion Channel of PMOS, enter Width of Junction (W), Inversion Layer Charge (Q_p) & Drift Velocity of Inversion (V_y) and hit the calculate button. Here is how the Current in Inversion Channel of PMOS calculation can be explained with given input values -> 29596.49 = (1.19*0.0017*14.63).

FAQ

What is Current in Inversion Channel of PMOS?

The Current in Inversion Channel of PMOS formula is defined as the current in the inversion channel is an important parameter for PMOS transistor operation as it determines the functionality of the transistor, such as its gain and output characteristics and is represented as I_d = (W*Q_p*V_y) or Drain Current = (Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion). Width of junction is the parameter which signifies how wide is the base junction of any analog electronics element, Inversion layer charge refers to the accumulation of charge carriers at the interface between the semiconductor and the insulating oxide layer when a voltage is applied to the gate electrode & The drift velocity of inversion layer in a MOSFET is the average velocity of the electrons that make up the inversion layer as they move through the material under the influence of an electric field.

How to calculate Current in Inversion Channel of PMOS?

The Current in Inversion Channel of PMOS formula is defined as the current in the inversion channel is an important parameter for PMOS transistor operation as it determines the functionality of the transistor, such as its gain and output characteristics is calculated using Drain Current = (Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion). To calculate Current in Inversion Channel of PMOS, you need Width of Junction (W), Inversion Layer Charge (Q_p) & Drift Velocity of Inversion (V_y). With our tool, you need to enter the respective value for Width of Junction, Inversion Layer Charge & Drift Velocity of Inversion and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Drain Current?

In this formula, Drain Current uses Width of Junction, Inversion Layer Charge & Drift Velocity of Inversion. We can use 4 other way(s) to calculate the same, which is/are as follows -

Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2)
Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source
Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2*(1+Voltage between Drain and Source/modulus(Early Voltage))
Drain Current = (Width of Junction*Inversion Layer Charge*Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel)

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