Drain Current after Voltage Scaling VLSI Solution

STEP 0: Pre-Calculation Summary
Formula Used
Drain Current after Voltage Scaling = Scaling Factor*Drain Current
ID(vs)' = Sf*ID
This formula uses 3 Variables
Variables Used
Drain Current after Voltage Scaling - (Measured in Ampere) - Drain Current after Voltage Scaling is referred to the current flowing through the drain terminal after scaling down the device by voltage scaling method.
Scaling Factor - Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.
Drain Current - (Measured in Ampere) - Drain Current is the current flowing from the source to the drain terminal under the influence of the voltage applied to the gate terminal.
STEP 1: Convert Input(s) to Base Unit
Scaling Factor: 1.5 --> No Conversion Required
Drain Current: 1.066 Milliampere --> 0.001066 Ampere (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
ID(vs)' = Sf*ID --> 1.5*0.001066
Evaluating ... ...
ID(vs)' = 0.001599
STEP 3: Convert Result to Output's Unit
0.001599 Ampere -->1.599 Milliampere (Check conversion here)
FINAL ANSWER
1.599 Milliampere <-- Drain Current after Voltage Scaling
(Calculation completed in 00.004 seconds)

Credits

Created by Priyanka Patel
Lalbhai Dalpatbhai College of engineering (LDCE), Ahmedabad
Priyanka Patel has created this Calculator and 25+ more calculators!
Verified by Santhosh Yadav
Dayananda Sagar College Of Engineering (DSCE), Banglore
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25 VLSI Material Optimization Calculators

Bulk Depletion Region Charge Density VLSI
Go Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))
Body Effect Coefficient
Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))
Junction Built-in Voltage VLSI
Go Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)
PN Junction Depletion Depth with Source VLSI
Go P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))
Total Source Parasitic Capacitance
Go Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)
Short Channel Saturation Current VLSI
Go Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage
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Go Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)
Surface Potential
Go Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)
Threshold Voltage when Source is at Body Potential
Go Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage
DIBL Coefficient
Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential
Threshold Voltage
Go Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)
Gate Capacitance
Go Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)
Subthreshold Slope
Go Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)
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Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)
Gate Length using Gate Oxide Capacitance
Go Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)
Gate Oxide Capacitance
Go Capacitance of Gate Oxide Layer = Gate Capacitance/(Gate Width*Gate Length)
Oxide Capacitance after Full Scaling VLSI
Go Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor
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Gate Oxide Thickness after Full Scaling VLSI
Go Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor
Intrinsic Gate Capacitance
Go MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width
Channel Length after Full Scaling VLSI
Go Channel Length after Full Scaling = Channel Length/Scaling Factor
Junction Depth after Full Scaling VLSI
Go Junction Depth after Full Scaling = Junction Depth/Scaling Factor
Channel Width after Full Scaling VLSI
Go Channel Width after Full Scaling = Channel Width/Scaling Factor
Mobility in Mosfet
Go Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer
K-Prime
Go K Prime = Mobility in MOSFET*Capacitance of Gate Oxide Layer

Drain Current after Voltage Scaling VLSI Formula

Drain Current after Voltage Scaling = Scaling Factor*Drain Current
ID(vs)' = Sf*ID

What factors influence the change in drain current of MOSFETs after voltage scaling?

Several factors influence the change in drain current of MOSFETs after voltage scaling. These factors include the gate oxide thickness, transistor geometry, channel doping concentration, and operating temperature. Additionally, the choice of semiconductor material and process technology can impact how drain current scales with voltage.

How to Calculate Drain Current after Voltage Scaling VLSI?

Drain Current after Voltage Scaling VLSI calculator uses Drain Current after Voltage Scaling = Scaling Factor*Drain Current to calculate the Drain Current after Voltage Scaling, The Drain Current after Voltage Scaling VLSI formula is defined as the current flowing through the drain terminal after scaling down the device by voltage scaling method. Drain Current after Voltage Scaling is denoted by ID(vs)' symbol.

How to calculate Drain Current after Voltage Scaling VLSI using this online calculator? To use this online calculator for Drain Current after Voltage Scaling VLSI, enter Scaling Factor (Sf) & Drain Current (ID) and hit the calculate button. Here is how the Drain Current after Voltage Scaling VLSI calculation can be explained with given input values -> 1599 = 1.5*0.001066.

FAQ

What is Drain Current after Voltage Scaling VLSI?
The Drain Current after Voltage Scaling VLSI formula is defined as the current flowing through the drain terminal after scaling down the device by voltage scaling method and is represented as ID(vs)' = Sf*ID or Drain Current after Voltage Scaling = Scaling Factor*Drain Current. Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process & Drain Current is the current flowing from the source to the drain terminal under the influence of the voltage applied to the gate terminal.
How to calculate Drain Current after Voltage Scaling VLSI?
The Drain Current after Voltage Scaling VLSI formula is defined as the current flowing through the drain terminal after scaling down the device by voltage scaling method is calculated using Drain Current after Voltage Scaling = Scaling Factor*Drain Current. To calculate Drain Current after Voltage Scaling VLSI, you need Scaling Factor (Sf) & Drain Current (ID). With our tool, you need to enter the respective value for Scaling Factor & Drain Current and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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