Drain Current after Voltage Scaling VLSI Calculator

↳

Electronics

Chemical Engineering

Civil

Electrical

Electronics and Instrumentation

Materials Science

Mechanical

Production Engineering

⤿

VLSI Material Optimization

Analog VLSI Design

✖Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.ⓘ Scaling Factor [Sf]			+10% -10%
✖Drain Current is the current flowing from the source to the drain terminal under the influence of the voltage applied to the gate terminal.ⓘ Drain Current [I_D]			+10% -10%

✖Drain Current after Voltage Scaling is referred to the current flowing through the drain terminal after scaling down the device by voltage scaling method.ⓘ Drain Current after Voltage Scaling VLSI [I_D(vs)']

⎘ Copy

👎

Formula

✖

Drain Current after Voltage Scaling VLSI

Formula

`("I"_{"D(vs)"}"'") = "Sf"*"I"_{"D"}`

Example

`"1.599mA"="1.5"*"1.066mA"`

Calculator

LaTeX

Reset

👍

Download Electronics Formula PDF PDF Image

Drain Current after Voltage Scaling VLSI Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain Current after Voltage Scaling = Scaling Factor*Drain Current
I_D(vs)' = Sf*I_D
This formula uses 3 Variables

Variables Used

Drain Current after Voltage Scaling - (Measured in Ampere) - Drain Current after Voltage Scaling is referred to the current flowing through the drain terminal after scaling down the device by voltage scaling method.
Scaling Factor - Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.
Drain Current - (Measured in Ampere) - Drain Current is the current flowing from the source to the drain terminal under the influence of the voltage applied to the gate terminal.

STEP 1: Convert Input(s) to Base Unit

Scaling Factor: 1.5 --> No Conversion Required
Drain Current: 1.066 Milliampere --> 0.001066 Ampere (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_D(vs)' = Sf*I_D --> 1.5*0.001066

Evaluating ... ...

I_D(vs)' = 0.001599

STEP 3: Convert Result to Output's Unit

0.001599 Ampere -->1.599 Milliampere (Check conversion here)

FINAL ANSWER

1.599 Milliampere <-- Drain Current after Voltage Scaling

(Calculation completed in 00.004 seconds)

You are here -

Home » Engineering » Electronics » VLSI Fabrication » VLSI Material Optimization » Drain Current after Voltage Scaling VLSI

Credits

Created by Priyanka Patel

Lalbhai Dalpatbhai College of engineering (LDCE), Ahmedabad

Priyanka Patel has created this Calculator and 25+ more calculators!

Verified by Santhosh Yadav

Dayananda Sagar College Of Engineering (DSCE), Banglore

Santhosh Yadav has verified this Calculator and 50+ more calculators!

< 25 VLSI Material Optimization Calculators

Bulk Depletion Region Charge Density VLSI

Go Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))

Body Effect Coefficient

Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))

Junction Built-in Voltage VLSI

Go Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)

PN Junction Depletion Depth with Source VLSI

Go P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))

Total Source Parasitic Capacitance

Go Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)

Short Channel Saturation Current VLSI

Go Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage

Junction Current

Go Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)

Surface Potential

Go Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)

DIBL Coefficient

Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential

Threshold Voltage when Source is at Body Potential

Go Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage

Subthreshold Slope

Go Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)

Threshold Voltage

Go Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)

Gate Capacitance

Go Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)

Channel Charge

Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

Gate Length using Gate Oxide Capacitance

Go Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)

Gate Oxide Capacitance

Go Capacitance of Gate Oxide Layer = Gate Capacitance/(Gate Width*Gate Length)

Oxide Capacitance after Full Scaling VLSI

Go Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor

Critical Voltage

Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

Gate Oxide Thickness after Full Scaling VLSI

Go Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor

Intrinsic Gate Capacitance

Go MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width

Channel Length after Full Scaling VLSI

Go Channel Length after Full Scaling = Channel Length/Scaling Factor

Junction Depth after Full Scaling VLSI

Go Junction Depth after Full Scaling = Junction Depth/Scaling Factor

Channel Width after Full Scaling VLSI

Go Channel Width after Full Scaling = Channel Width/Scaling Factor

Mobility in Mosfet

Go Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer

K-Prime

Go K Prime = Mobility in MOSFET*Capacitance of Gate Oxide Layer

Drain Current after Voltage Scaling VLSI Formula

Drain Current after Voltage Scaling = Scaling Factor*Drain Current
I_D(vs)' = Sf*I_D

What factors influence the change in drain current of MOSFETs after voltage scaling?

Several factors influence the change in drain current of MOSFETs after voltage scaling. These factors include the gate oxide thickness, transistor geometry, channel doping concentration, and operating temperature. Additionally, the choice of semiconductor material and process technology can impact how drain current scales with voltage.

How to Calculate Drain Current after Voltage Scaling VLSI?

Drain Current after Voltage Scaling VLSI calculator uses Drain Current after Voltage Scaling = Scaling Factor*Drain Current to calculate the Drain Current after Voltage Scaling, The Drain Current after Voltage Scaling VLSI formula is defined as the current flowing through the drain terminal after scaling down the device by voltage scaling method. Drain Current after Voltage Scaling is denoted by I_D(vs)' symbol.

How to calculate Drain Current after Voltage Scaling VLSI using this online calculator? To use this online calculator for Drain Current after Voltage Scaling VLSI, enter Scaling Factor (Sf) & Drain Current (I_D) and hit the calculate button. Here is how the Drain Current after Voltage Scaling VLSI calculation can be explained with given input values -> 1599 = 1.5*0.001066.

FAQ

What is Drain Current after Voltage Scaling VLSI?

The Drain Current after Voltage Scaling VLSI formula is defined as the current flowing through the drain terminal after scaling down the device by voltage scaling method and is represented as I_D(vs)' = Sf*I_D or Drain Current after Voltage Scaling = Scaling Factor*Drain Current. Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process & Drain Current is the current flowing from the source to the drain terminal under the influence of the voltage applied to the gate terminal.

How to calculate Drain Current after Voltage Scaling VLSI?

The Drain Current after Voltage Scaling VLSI formula is defined as the current flowing through the drain terminal after scaling down the device by voltage scaling method is calculated using Drain Current after Voltage Scaling = Scaling Factor*Drain Current. To calculate Drain Current after Voltage Scaling VLSI, you need Scaling Factor (Sf) & Drain Current (I_D). With our tool, you need to enter the respective value for Scaling Factor & Drain Current and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

Home

FREE PDFs

🔍 Search