Effective Density of States in Conduction Band Calculator

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✖Effective Mass of Electron is a concept used in solid-state physics to describe the behavior of electrons in a crystal lattice or a semiconductor material.ⓘ Effective Mass of Electron [m_eff]			+10% -10%
✖Absolute Temperature represents the temperature of the system.ⓘ Absolute Temperature [T]			+10% -10%

✖Effective Density of States refers to the density of available electron states per unit volume within the energy band structure of a material.ⓘ Effective Density of States in Conduction Band [N_eff]

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Effective Density of States in Conduction Band

Formula

`"N"_{"eff"} = 2*(2*pi*"m"_{"eff"}*"[BoltZ]"*"T"/"[hP]"^2)^(3/2)`

Example

`"3.9E^24"=2*(2*pi*"0.2e-30kg"*"[BoltZ]"*"393K"/"[hP]"^2)^(3/2)`

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Effective Density of States in Conduction Band Solution

STEP 0: Pre-Calculation Summary

Formula Used

Effective Density of States = 2*(2*pi*Effective Mass of Electron*[BoltZ]*Absolute Temperature/[hP]^2)^(3/2)
N_eff = 2*(2*pi*m_eff*[BoltZ]*T/[hP]^2)^(3/2)
This formula uses 3 Constants, 3 Variables

Constants Used

[BoltZ] - Boltzmann constant Value Taken As 1.38064852E-23
[hP] - Planck constant Value Taken As 6.626070040E-34
pi - Archimedes' constant Value Taken As 3.14159265358979323846264338327950288

Variables Used

Effective Density of States - Effective Density of States refers to the density of available electron states per unit volume within the energy band structure of a material.
Effective Mass of Electron - (Measured in Kilogram) - Effective Mass of Electron is a concept used in solid-state physics to describe the behavior of electrons in a crystal lattice or a semiconductor material.
Absolute Temperature - (Measured in Kelvin) - Absolute Temperature represents the temperature of the system.

STEP 1: Convert Input(s) to Base Unit

Effective Mass of Electron: 2E-31 Kilogram --> 2E-31 Kilogram No Conversion Required
Absolute Temperature: 393 Kelvin --> 393 Kelvin No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

N_eff = 2*(2*pi*m_eff*[BoltZ]*T/[hP]^2)^(3/2) --> 2*(2*pi*2E-31*[BoltZ]*393/[hP]^2)^(3/2)

Evaluating ... ...

N_eff = 3.87070655661186E+24

STEP 3: Convert Result to Output's Unit

3.87070655661186E+24 --> No Conversion Required

FINAL ANSWER

3.87070655661186E+24 ≈ 3.9E+24 <-- Effective Density of States

(Calculation completed in 00.004 seconds)

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Created by Priyanka G Chalikar

The National Institute Of Engineering (NIE), Mysuru

Priyanka G Chalikar has created this Calculator and 10+ more calculators!

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Dayananda Sagar College Of Engineering (DSCE), Banglore

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< 14 Devices with Optical Components Calculators

PN Junction Capacitance

Go Junction Capacitance = PN Junction Area/2*sqrt((2*[Charge-e]*Relative Permittivity*[Permitivity-silicon])/(Voltage Across PN Junction-(Reverse Bias Voltage))*((Acceptor Concentration*Donor Concentration)/(Acceptor Concentration+Donor Concentration)))

Electron Concentration under Unbalanced Condition

Go Electron Concentration = Intrinsic Electron Concentration*exp((Quasi Fermi Level of Electrons-Intrinsic Energy Level of Semiconductor)/([BoltZ]*Absolute Temperature))

Diffusion Length of Transition Region

Go Diffusion Length of Transition Region = Optical Current/(Charge*PN Junction Area*Optical Generation Rate)-(Transition Width+Length of P-Side Junction)

Current Due to Optically Generated Carrier

Go Optical Current = Charge*PN Junction Area*Optical Generation Rate*(Transition Width+Diffusion Length of Transition Region+Length of P-Side Junction)

Peak Retardation

Go Peak Retardation = (2*pi)/Wavelength of Light*Length of Fiber*Refractive Index^3*Modulation Voltage

Maximum Acceptance Angle of Compound Lens

Go Acceptance Angle = asin(Refractive Index of Medium 1*Radius of Lens*sqrt(Positive Constant))

Effective Density of States in Conduction Band

Go Effective Density of States = 2*(2*pi*Effective Mass of Electron*[BoltZ]*Absolute Temperature/[hP]^2)^(3/2)

Diffusion Coefficient of Electron

Go Electron Diffusion Coefficient = Mobility of Electron*[BoltZ]*Absolute Temperature/[Charge-e]

Diffraction using Fresnel-Kirchoff Formula

Go Diffraction Angle = asin(1.22*Wavelength of Visible Light/Diameter of Aperture)

Fringe Spacing given Apex Angle

Go Fringe Space = Wavelength of Visible Light/(2*tan(Angle of Interference))

Excitation Energy

Go Excitation Energy = 1.6*10^-19*13.6*(Effective Mass of Electron/[Mass-e])*(1/[Permitivity-silicon]^2)

Brewsters Angle

Go Brewster's Angle = arctan(Refractive Index of Medium 1/Refractive Index)

Angle of Rotation of Plane of Polarization

Go Angle of Rotation = 1.8*Magnetic Flux Density*Length of Medium

Apex Angle

Go Apex Angle = tan(Alpha)

Effective Density of States in Conduction Band Formula

Effective Density of States = 2*(2*pi*Effective Mass of Electron*[BoltZ]*Absolute Temperature/[hP]^2)^(3/2)
N_eff = 2*(2*pi*m_eff*[BoltZ]*T/[hP]^2)^(3/2)

How does it differ from density of states?

The density of states is the number of different states at a particular energy level that electrons are allowed to occupy, i.e. the number of electron states per unit volume per unit energy. Whereas, the effective density of states is integrated over a range of energy and takes energy out of the consideration as it is a constant for a given temperature.

How to Calculate Effective Density of States in Conduction Band?

Effective Density of States in Conduction Band calculator uses Effective Density of States = 2*(2*pi*Effective Mass of Electron*[BoltZ]*Absolute Temperature/[hP]^2)^(3/2) to calculate the Effective Density of States, The Effective Density of States in Conduction Band formula is defined as the density of states in the conduction band of a semiconductor, integrated over a range of energy and is a constant for a particular temperature. Effective Density of States is denoted by N_eff symbol.

How to calculate Effective Density of States in Conduction Band using this online calculator? To use this online calculator for Effective Density of States in Conduction Band, enter Effective Mass of Electron (m_eff) & Absolute Temperature (T) and hit the calculate button. Here is how the Effective Density of States in Conduction Band calculation can be explained with given input values -> 3.9E+24 = 2*(2*pi*2E-31*[BoltZ]*393/[hP]^2)^(3/2).

FAQ

What is Effective Density of States in Conduction Band?

The Effective Density of States in Conduction Band formula is defined as the density of states in the conduction band of a semiconductor, integrated over a range of energy and is a constant for a particular temperature and is represented as N_eff = 2*(2*pi*m_eff*[BoltZ]*T/[hP]^2)^(3/2) or Effective Density of States = 2*(2*pi*Effective Mass of Electron*[BoltZ]*Absolute Temperature/[hP]^2)^(3/2). Effective Mass of Electron is a concept used in solid-state physics to describe the behavior of electrons in a crystal lattice or a semiconductor material & Absolute Temperature represents the temperature of the system.

How to calculate Effective Density of States in Conduction Band?

The Effective Density of States in Conduction Band formula is defined as the density of states in the conduction band of a semiconductor, integrated over a range of energy and is a constant for a particular temperature is calculated using Effective Density of States = 2*(2*pi*Effective Mass of Electron*[BoltZ]*Absolute Temperature/[hP]^2)^(3/2). To calculate Effective Density of States in Conduction Band, you need Effective Mass of Electron (m_eff) & Absolute Temperature (T). With our tool, you need to enter the respective value for Effective Mass of Electron & Absolute Temperature and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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