Excess Carrier Concentration Calculator

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Energy Band & Charge Carrier

Electrons & Holes

Semiconductor Carriers

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✖Optical Generation Rate the number of electrons generated at each point in the device due to the absorption of photons.ⓘ Optical Generation Rate [g_op]			+10% -10%
✖Recombination Lifetime the average time it takes an excess minority carrier to recombine.ⓘ Recombination Lifetime [τ_n]			+10% -10%

✖Excess Carrier Concentration is extra of electron present in the carrier concentration.ⓘ Excess Carrier Concentration [δ_n]

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Formula

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Excess Carrier Concentration

Formula

`"δ"_{"n"} = "g"_{"op"}*"τ"_{"n"}`

Example

`"1E^14/m³"="2.9e19"*"3.62e-6s"`

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Excess Carrier Concentration Solution

STEP 0: Pre-Calculation Summary

Formula Used

Excess Carrier Concentration = Optical Generation Rate*Recombination Lifetime
δ_n = g_op*τ_n
This formula uses 3 Variables

Variables Used

Excess Carrier Concentration - (Measured in 1 per Cubic Meter) - Excess Carrier Concentration is extra of electron present in the carrier concentration.
Optical Generation Rate - Optical Generation Rate the number of electrons generated at each point in the device due to the absorption of photons.
Recombination Lifetime - (Measured in Second) - Recombination Lifetime the average time it takes an excess minority carrier to recombine.

STEP 1: Convert Input(s) to Base Unit

Optical Generation Rate: 2.9E+19 --> No Conversion Required
Recombination Lifetime: 3.62E-06 Second --> 3.62E-06 Second No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

δ_n = g_op*τ_n --> 2.9E+19*3.62E-06

Evaluating ... ...

δ_n = 104980000000000

STEP 3: Convert Result to Output's Unit

104980000000000 1 per Cubic Meter --> No Conversion Required

FINAL ANSWER

104980000000000 ≈ 1E+14 1 per Cubic Meter <-- Excess Carrier Concentration

(Calculation completed in 00.018 seconds)

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Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

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< 20 Energy Band & Charge Carrier Calculators

Intrinsic Carrier Concentration

Go Intrinsic Carrier Concentration = sqrt(Effective Density of State in Valence Band*Effective Density of State in Conduction Band)*exp(-Energy Gap/(2*[BoltZ]*Temperature))

Carrier Lifetime

Go Carrier Lifetime = 1/(Proportionality for Recombination*(Holes Concentration in Valance Band+Electron Concentration in Conduction Band))

Energy of Electron given Coulomb's Constant

Go Energy of Electron = (Quantum Number^2*pi^2*[hP]^2)/(2*[Mass-e]*Potential Well Length^2)

Steady State Electron Concentration

Go Steady State Carrier Concentration = Electron Concentration in Conduction Band+Excess Carrier Concentration

Concentration in Conduction Band

Go Electron Concentration in Conduction Band = Effective Density of State in Conduction Band*Fermi Function

Effective Density of State

Go Effective Density of State in Conduction Band = Electron Concentration in Conduction Band/Fermi Function

Fermi Function

Go Fermi Function = Electron Concentration in Conduction Band/Effective Density of State in Conduction Band

Effective Density State in Valence Band

Go Effective Density of State in Valence Band = Holes Concentration in Valance Band/(1-Fermi Function)

Concentration of Holes in Valence Band

Go Holes Concentration in Valance Band = Effective Density of State in Valence Band*(1-Fermi Function)

Recombination Lifetime

Go Recombination Lifetime = (Proportionality for Recombination*Holes Concentration in Valance Band)^-1

Distribution Coefficient

Go Distribution Coefficient = Impurity Concentration in Solid/Impurity Concentration in Liquid

Liquid Concentration

Go Impurity Concentration in Liquid = Impurity Concentration in Solid/Distribution Coefficient

Net Rate of Change in Conduction Band

Go Proportionality for Recombination = Thermal Generation/(Intrinsic Carrier Concentration^2)

Thermal Generation Rate

Go Thermal Generation = Proportionality for Recombination*(Intrinsic Carrier Concentration^2)

Excess Carrier Concentration

Go Excess Carrier Concentration = Optical Generation Rate*Recombination Lifetime

Optical Generation Rate

Go Optical Generation Rate = Excess Carrier Concentration/Recombination Lifetime

Photoelectron Energy

Go Photoelectron Energy = [hP]*Frequency of Incident Light

Conduction Band Energy

Go Conduction Band Energy = Energy Gap+Valence Band Energy

Valence Band Energy

Go Valence Band Energy = Conduction Band Energy-Energy Gap

Energy Gap

Go Energy Gap = Conduction Band Energy-Valence Band Energy

< 15 Semiconductor Carriers Calculators

Intrinsic Carrier Concentration

Go Intrinsic Carrier Concentration = sqrt(Effective Density of State in Valence Band*Effective Density of State in Conduction Band)*exp(-Energy Gap/(2*[BoltZ]*Temperature))

Carrier Lifetime

Go Carrier Lifetime = 1/(Proportionality for Recombination*(Holes Concentration in Valance Band+Electron Concentration in Conduction Band))

Radius of Nth Orbit of Electron

Go Radius of nth Orbit of Electron = ([Coulomb]*Quantum Number^2*[hP]^2)/(Mass of Particle*[Charge-e]^2)

Quantum State

Go Energy in Quantum State = (Quantum Number^2*pi^2*[hP]^2)/(2*Mass of Particle*Potential Well Length^2)

Electron Flux Density

Go Electron Flux Density = (Mean Free Path Electron/(2*Time))*Difference in Electron Concentration

Fermi Function

Go Fermi Function = Electron Concentration in Conduction Band/Effective Density of State in Conduction Band

Effective Density State in Valence Band

Go Effective Density of State in Valence Band = Holes Concentration in Valance Band/(1-Fermi Function)

Distribution Coefficient

Go Distribution Coefficient = Impurity Concentration in Solid/Impurity Concentration in Liquid

Electron Multiplication

Go Electron Multiplication = Number of Electron Out of Region/Number of Electron in Region

Excess Carrier Concentration

Go Excess Carrier Concentration = Optical Generation Rate*Recombination Lifetime

Electron Current Density

Go Electron Current Density = Total Carrier Current Density-Hole Current Density

Hole Current Density

Go Hole Current Density = Total Carrier Current Density-Electron Current Density

Mean Time Spend by Hole

Go Mean Time Spend by Hole = Optical Generation Rate*Majority Carrier Decay

Photoelectron Energy

Go Photoelectron Energy = [hP]*Frequency of Incident Light

Conduction Band Energy

Go Conduction Band Energy = Energy Gap+Valence Band Energy

Excess Carrier Concentration Formula

Excess Carrier Concentration = Optical Generation Rate*Recombination Lifetime
δ_n = g_op*τ_n

How do you increase carrier concentration?

The lowering the temperature causes a decrease in the intrinsic carrier concentration, while raising the temperature causes an increase in intrinsic carrier concentration

How to Calculate Excess Carrier Concentration?

Excess Carrier Concentration calculator uses Excess Carrier Concentration = Optical Generation Rate*Recombination Lifetime to calculate the Excess Carrier Concentration, The Excess Carrier Concentration formula is defined as The number of majority carriers per unit volume, expressed in dimensionless units such as percentage, parts per million, or parts per billion. Excess Carrier Concentration is denoted by δ_n symbol.

How to calculate Excess Carrier Concentration using this online calculator? To use this online calculator for Excess Carrier Concentration, enter Optical Generation Rate (g_op) & Recombination Lifetime (τ_n) and hit the calculate button. Here is how the Excess Carrier Concentration calculation can be explained with given input values -> 1E+14 = 2.9E+19*3.62E-06.

FAQ

What is Excess Carrier Concentration?

The Excess Carrier Concentration formula is defined as The number of majority carriers per unit volume, expressed in dimensionless units such as percentage, parts per million, or parts per billion and is represented as δ_n = g_op*τ_n or Excess Carrier Concentration = Optical Generation Rate*Recombination Lifetime. Optical Generation Rate the number of electrons generated at each point in the device due to the absorption of photons & Recombination Lifetime the average time it takes an excess minority carrier to recombine.

How to calculate Excess Carrier Concentration?

The Excess Carrier Concentration formula is defined as The number of majority carriers per unit volume, expressed in dimensionless units such as percentage, parts per million, or parts per billion is calculated using Excess Carrier Concentration = Optical Generation Rate*Recombination Lifetime. To calculate Excess Carrier Concentration, you need Optical Generation Rate (g_op) & Recombination Lifetime (τ_n). With our tool, you need to enter the respective value for Optical Generation Rate & Recombination Lifetime and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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