Gate Capacitance Calculator

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VLSI Material Optimization

Analog VLSI Design

✖Channel Charge is defined as force experienced of a matter, when placed in an electromagnetic field.ⓘ Channel Charge [Q_ch]			+10% -10%
✖Gate to Channel Voltage is defined as the drain-source on-state resistance is larger than rated value when gate voltage is around threshold voltage.ⓘ Gate to Channel Voltage [V_gc]			+10% -10%
✖Threshold voltage of transistor is the minimum gate to source voltage required to create conducting path between the source and drain terminals.ⓘ Threshold Voltage [V_t]			+10% -10%

✖Gate Capacitance is the capacitance of the gate terminal of a field-effect transistor.ⓘ Gate Capacitance [C_g]

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Formula

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Gate Capacitance

Formula

`"C"_{"g"} = "Q"_{"ch"}/("V"_{"gc"}-"V"_{"t"})`

Example

`"59.60364μF"="0.40mC"/("7.011V"-"0.3V")`

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Gate Capacitance Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)
C_g = Q_ch/(V_gc-V_t)
This formula uses 4 Variables

Variables Used

Gate Capacitance - (Measured in Farad) - Gate Capacitance is the capacitance of the gate terminal of a field-effect transistor.
Channel Charge - (Measured in Coulomb) - Channel Charge is defined as force experienced of a matter, when placed in an electromagnetic field.
Gate to Channel Voltage - (Measured in Volt) - Gate to Channel Voltage is defined as the drain-source on-state resistance is larger than rated value when gate voltage is around threshold voltage.
Threshold Voltage - (Measured in Volt) - Threshold voltage of transistor is the minimum gate to source voltage required to create conducting path between the source and drain terminals.

STEP 1: Convert Input(s) to Base Unit

Channel Charge: 0.4 Millicoulomb --> 0.0004 Coulomb (Check conversion here)
Gate to Channel Voltage: 7.011 Volt --> 7.011 Volt No Conversion Required
Threshold Voltage: 0.3 Volt --> 0.3 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_g = Q_ch/(V_gc-V_t) --> 0.0004/(7.011-0.3)

Evaluating ... ...

C_g = 5.96036358217851E-05

STEP 3: Convert Result to Output's Unit

5.96036358217851E-05 Farad -->59.6036358217851 Microfarad (Check conversion here)

FINAL ANSWER

59.6036358217851 ≈ 59.60364 Microfarad <-- Gate Capacitance

(Calculation completed in 00.004 seconds)

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Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

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< 25 VLSI Material Optimization Calculators

Bulk Depletion Region Charge Density VLSI

Go Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))

Body Effect Coefficient

Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))

Junction Built-in Voltage VLSI

Go Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)

PN Junction Depletion Depth with Source VLSI

Go P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))

Total Source Parasitic Capacitance

Go Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)

Short Channel Saturation Current VLSI

Go Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage

Junction Current

Go Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)

Surface Potential

Go Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)

DIBL Coefficient

Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential

Threshold Voltage when Source is at Body Potential

Go Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage

Subthreshold Slope

Go Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)

Threshold Voltage

Go Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)

Gate Capacitance

Go Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)

Channel Charge

Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

Gate Length using Gate Oxide Capacitance

Go Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)

Gate Oxide Capacitance

Go Capacitance of Gate Oxide Layer = Gate Capacitance/(Gate Width*Gate Length)

Oxide Capacitance after Full Scaling VLSI

Go Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor

Critical Voltage

Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

Gate Oxide Thickness after Full Scaling VLSI

Go Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor

Intrinsic Gate Capacitance

Go MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width

Channel Length after Full Scaling VLSI

Go Channel Length after Full Scaling = Channel Length/Scaling Factor

Junction Depth after Full Scaling VLSI

Go Junction Depth after Full Scaling = Junction Depth/Scaling Factor

Channel Width after Full Scaling VLSI

Go Channel Width after Full Scaling = Channel Width/Scaling Factor

Mobility in Mosfet

Go Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer

K-Prime

Go K Prime = Mobility in MOSFET*Capacitance of Gate Oxide Layer

Gate Capacitance Formula

Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)
C_g = Q_ch/(V_gc-V_t)

What are applications of calculating Gate Capacitance in VLSI?

Calculating gate capacitance in (VLSI) is crucial for optimizing power consumption and signal integrity. It helps in designing efficient CMOS circuits, determining delays, and minimizing switching power. This knowledge is vital for achieving high-performance, low-power integrated circuits in applications like smartphones, IoT devices, and microprocessors.

How to Calculate Gate Capacitance?

Gate Capacitance calculator uses Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage) to calculate the Gate Capacitance, The Gate Capacitance formula is defined as the capacitance of the gate terminal of a field-effect transistor. It can be expressed as the absolute capacitance of the gate of a transistor, or as the capacitance per unit area of an integrated circuit technology, or as the capacitance per unit width of minimum-length transistors in a technology. Gate Capacitance is denoted by C_g symbol.

How to calculate Gate Capacitance using this online calculator? To use this online calculator for Gate Capacitance, enter Channel Charge (Q_ch), Gate to Channel Voltage (V_gc) & Threshold Voltage (V_t) and hit the calculate button. Here is how the Gate Capacitance calculation can be explained with given input values -> 6E+7 = 0.0004/(7.011-0.3).

FAQ

What is Gate Capacitance?

The Gate Capacitance formula is defined as the capacitance of the gate terminal of a field-effect transistor. It can be expressed as the absolute capacitance of the gate of a transistor, or as the capacitance per unit area of an integrated circuit technology, or as the capacitance per unit width of minimum-length transistors in a technology and is represented as C_g = Q_ch/(V_gc-V_t) or Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage). Channel Charge is defined as force experienced of a matter, when placed in an electromagnetic field, Gate to Channel Voltage is defined as the drain-source on-state resistance is larger than rated value when gate voltage is around threshold voltage & Threshold voltage of transistor is the minimum gate to source voltage required to create conducting path between the source and drain terminals.

How to calculate Gate Capacitance?

The Gate Capacitance formula is defined as the capacitance of the gate terminal of a field-effect transistor. It can be expressed as the absolute capacitance of the gate of a transistor, or as the capacitance per unit area of an integrated circuit technology, or as the capacitance per unit width of minimum-length transistors in a technology is calculated using Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage). To calculate Gate Capacitance, you need Channel Charge (Q_ch), Gate to Channel Voltage (V_gc) & Threshold Voltage (V_t). With our tool, you need to enter the respective value for Channel Charge, Gate to Channel Voltage & Threshold Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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