Gate Oxide Thickness after Full Scaling VLSI Calculator

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VLSI Material Optimization

Analog VLSI Design

✖Gate Oxide Thickness is defined as the thickness of the insulating layer (oxide) that separates the gate electrode from the semiconductor substrate in a MOSFET.ⓘ Gate Oxide Thickness [t_ox]			+10% -10%
✖Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.ⓘ Scaling Factor [Sf]			+10% -10%

✖Gate Oxide Thickness after Full Scaling is defined as the new thickness of the oxide layer after reducing dimensions of transistor by keeping electric field constant.ⓘ Gate Oxide Thickness after Full Scaling VLSI [t_ox']

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Formula

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Gate Oxide Thickness after Full Scaling VLSI

Formula

`("t"_{"ox"}"'") = "t"_{"ox"}/"Sf"`

Example

`"1.333333nm"="2nm"/"1.5"`

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Gate Oxide Thickness after Full Scaling VLSI Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor
t_ox' = t_ox/Sf
This formula uses 3 Variables

Variables Used

Gate Oxide Thickness after Full Scaling - (Measured in Meter) - Gate Oxide Thickness after Full Scaling is defined as the new thickness of the oxide layer after reducing dimensions of transistor by keeping electric field constant.
Gate Oxide Thickness - (Measured in Meter) - Gate Oxide Thickness is defined as the thickness of the insulating layer (oxide) that separates the gate electrode from the semiconductor substrate in a MOSFET.
Scaling Factor - Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.

STEP 1: Convert Input(s) to Base Unit

Gate Oxide Thickness: 2 Nanometer --> 2E-09 Meter (Check conversion here)
Scaling Factor: 1.5 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

t_ox' = t_ox/Sf --> 2E-09/1.5

Evaluating ... ...

t_ox' = 1.33333333333333E-09

STEP 3: Convert Result to Output's Unit

1.33333333333333E-09 Meter -->1.33333333333333 Nanometer (Check conversion here)

FINAL ANSWER

1.33333333333333 ≈ 1.333333 Nanometer <-- Gate Oxide Thickness after Full Scaling

(Calculation completed in 00.004 seconds)

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Created by Priyanka Patel

Lalbhai Dalpatbhai College of engineering (LDCE), Ahmedabad

Priyanka Patel has created this Calculator and 25+ more calculators!

Verified by Santhosh Yadav

Dayananda Sagar College Of Engineering (DSCE), Banglore

Santhosh Yadav has verified this Calculator and 50+ more calculators!

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Go Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor

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Gate Oxide Thickness after Full Scaling VLSI Formula

Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor
t_ox' = t_ox/Sf

What are the trade-offs associated with reducing gate oxide thickness during full scaling?

Thinning the gate oxide enhances transistor switching speeds but may lead to increased gate leakage current and challenges in maintaining reliable transistor operation. Trade-offs need to be carefully considered.

How to Calculate Gate Oxide Thickness after Full Scaling VLSI?

Gate Oxide Thickness after Full Scaling VLSI calculator uses Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor to calculate the Gate Oxide Thickness after Full Scaling, The Gate Oxide Thickness after Full Scaling VLSI formula is defined as the new thickness of the oxide layer after reducing dimensions of transistor by keeping electric field constant. Gate Oxide Thickness after Full Scaling is denoted by t_ox' symbol.

How to calculate Gate Oxide Thickness after Full Scaling VLSI using this online calculator? To use this online calculator for Gate Oxide Thickness after Full Scaling VLSI, enter Gate Oxide Thickness (t_ox) & Scaling Factor (Sf) and hit the calculate button. Here is how the Gate Oxide Thickness after Full Scaling VLSI calculation can be explained with given input values -> 1.3E+9 = 2E-09/1.5.

FAQ

What is Gate Oxide Thickness after Full Scaling VLSI?

The Gate Oxide Thickness after Full Scaling VLSI formula is defined as the new thickness of the oxide layer after reducing dimensions of transistor by keeping electric field constant and is represented as t_ox' = t_ox/Sf or Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor. Gate Oxide Thickness is defined as the thickness of the insulating layer (oxide) that separates the gate electrode from the semiconductor substrate in a MOSFET & Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.

How to calculate Gate Oxide Thickness after Full Scaling VLSI?

The Gate Oxide Thickness after Full Scaling VLSI formula is defined as the new thickness of the oxide layer after reducing dimensions of transistor by keeping electric field constant is calculated using Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor. To calculate Gate Oxide Thickness after Full Scaling VLSI, you need Gate Oxide Thickness (t_ox) & Scaling Factor (Sf). With our tool, you need to enter the respective value for Gate Oxide Thickness & Scaling Factor and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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