Gate to Source Channel Width of MOSFET Calculator

✖Overlap capacitance refers to the capacitance that arises between two conductive regions in close proximity to each other, but not directly connected.ⓘ Overlap Capacitance [C_oc]			+10% -10%
✖Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.ⓘ Oxide Capacitance [C_ox]			+10% -10%
✖Overlap Length is the average distance that the excess carriers can cover before they recombine.ⓘ Overlap Length [L_ov]			+10% -10%

✖Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz).ⓘ Gate to Source Channel Width of MOSFET [W_c]

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Formula

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Gate to Source Channel Width of MOSFET

Formula

`"W"_{"c"} = "C"_{"oc"}/("C"_{"ox"}*"L"_{"ov"})`

Example

`"9.957028μm"="3.8e-7μF"/("940μF"*"40.6μm")`

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Gate to Source Channel Width of MOSFET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length)
W_c = C_oc/(C_ox*L_ov)
This formula uses 4 Variables

Variables Used

Channel Width - (Measured in Meter) - Channel width refers to the range of frequencies used for transmitting data over a wireless communication channel. It is also known as bandwidth and is measured in hertz (Hz).
Overlap Capacitance - (Measured in Farad) - Overlap capacitance refers to the capacitance that arises between two conductive regions in close proximity to each other, but not directly connected.
Oxide Capacitance - (Measured in Farad) - Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.
Overlap Length - (Measured in Meter) - Overlap Length is the average distance that the excess carriers can cover before they recombine.

STEP 1: Convert Input(s) to Base Unit

Overlap Capacitance: 3.8E-07 Microfarad --> 3.8E-13 Farad (Check conversion here)
Oxide Capacitance: 940 Microfarad --> 0.00094 Farad (Check conversion here)
Overlap Length: 40.6 Micrometer --> 4.06E-05 Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

W_c = C_oc/(C_ox*L_ov) --> 3.8E-13/(0.00094*4.06E-05)

Evaluating ... ...

W_c = 9.95702756524473E-06

STEP 3: Convert Result to Output's Unit

9.95702756524473E-06 Meter -->9.95702756524473 Micrometer (Check conversion here)

FINAL ANSWER

9.95702756524473 ≈ 9.957028 Micrometer <-- Channel Width

(Calculation completed in 00.004 seconds)

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Home » Engineering » Electronics » MOSFET » Analog Electronics » Internal Capacitive Effects and High Frequency Model » Gate to Source Channel Width of MOSFET

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Created by Payal Priya

Birsa Institute of Technology (BIT), Sindri

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National Institute Of Technology (NIT), Hamirpur

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< 15 Internal Capacitive Effects and High Frequency Model Calculators

Conductance of Channel of MOSFETs

Go Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*(Channel Width/Channel Length)*Voltage across Oxide

Transition Frequency of MOSFET

Go Transition Frequency = Transconductance/(2*pi*(Source Gate Capacitance+Gate-Drain Capacitance))

Magnitude of Electron Charge in Channel of MOSFET

Go Electron Charge in Channel = Oxide Capacitance*Channel Width*Channel Length*Effective Voltage

Lower Critical Frequency of Mosfet

Go Corner Frequency = 1/(2*pi*(Resistance+Input Resistance)*Capacitance)

Phase Shift in Output RC Circuit

Go Phase Shift = arctan(Capacitive Reactance/(Resistance+Load Resistance))

Output Miller Capacitance Mosfet

Go Output Miller Capacitance = Gate-Drain Capacitance*((Voltage Gain+1)/Voltage Gain)

Total Capacitance between Gate and Channel of MOSFETs

Go Gate Channel Capacitance = Oxide Capacitance*Channel Width*Channel Length

Gate to Source Channel Width of MOSFET

Go Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length)

Overlap Capacitance of MOSFET

Go Overlap Capacitance = Channel Width*Oxide Capacitance*Overlap Length

Critical Frequency in High Frequency Input RC Circuit

Go Corner Frequency = 1/(2*pi*Input Resistance*Miller Capacitance)

Phase Shift in Input RC Circuit

Go Phase Shift = arctan(Capacitive Reactance/Input Resistance)

Capacitive Reactance of Mosfet

Go Capacitive Reactance = 1/(2*pi*Frequency*Capacitance)

Critical Frequency of Mosfet

Go Critical Frequency in decibles = 10*log10(Critical Frequency)

Miller Capacitance of Mosfet

Go Miller Capacitance = Gate-Drain Capacitance*(Voltage Gain+1)

Attenuation of RC Circuit

Go Attenuation = Base Voltage/Input Voltage

< 15 MOSFET Characterstics Calculators

Conductance of Channel of MOSFET using Gate to Source Voltage

Go Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage)

Voltage Gain given Load Resistance of MOSFET

Go Voltage Gain = Transconductance*(1/(1/Load Resistance+1/Output Resistance))/(1+Transconductance*Source Resistance)

Transition Frequency of MOSFET

Go Transition Frequency = Transconductance/(2*pi*(Source Gate Capacitance+Gate-Drain Capacitance))

Maximum Voltage Gain at Bias Point

Go Maximum Voltage Gain = 2*(Supply Voltage-Effective Voltage)/(Effective Voltage)

Voltage Gain using Small Signal

Go Voltage Gain = Transconductance*1/(1/Load Resistance+1/Finite Resistance)

Gate to Source Channel Width of MOSFET

Go Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length)

Voltage Gain given Drain Voltage

Go Voltage Gain = (Drain Current*Load Resistance*2)/Effective Voltage

Body Effect on Transconductance

Go Body Transconductance = Change in Threshold to Base Voltage*Transconductance

Saturation Voltage of MOSFET

Go Drain and Source Saturation Voltage = Gate-Source Voltage-Threshold Voltage

Bias Voltage of MOSFET

Go Total Instantaneous Bias Voltage = DC Bias Voltage+DC Voltage

Maximum Voltage Gain given all Voltages

Go Maximum Voltage Gain = (Supply Voltage-0.3)/Thermal Voltage

Amplification Factor in Small Signal MOSFET Model

Go Amplification Factor = Transconductance*Output Resistance

Treshold Voltage of MOSFET

Go Threshold Voltage = Gate-Source Voltage-Effective Voltage

Transconductance in MOSFET

Go Transconductance = (2*Drain Current)/Overdrive Voltage

Conductance in Linear Resistance of MOSFET

Go Conductance of Channel = 1/Linear Resistance

Gate to Source Channel Width of MOSFET Formula

Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length)
W_c = C_oc/(C_ox*L_ov)

What is MOSFET and how it works?

In general, the MOSFET works as a switch, the MOSFET controls the voltage and current flow between the source and drain. The working of the MOSFET depends on the MOS capacitor, which is the semiconductor surface below the oxide layers between the source and drain terminal.

How to Calculate Gate to Source Channel Width of MOSFET?

Gate to Source Channel Width of MOSFET calculator uses Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length) to calculate the Channel Width, The Gate to Source Channel Width of MOSFET formula is defined as the ratio of the width of the gate electrode to the width of the source electrode, expressed as a percentage. Channel Width is denoted by W_c symbol.

How to calculate Gate to Source Channel Width of MOSFET using this online calculator? To use this online calculator for Gate to Source Channel Width of MOSFET, enter Overlap Capacitance (C_oc), Oxide Capacitance (C_ox) & Overlap Length (L_ov) and hit the calculate button. Here is how the Gate to Source Channel Width of MOSFET calculation can be explained with given input values -> 1E+7 = 3.8E-13/(0.00094*4.06E-05).

FAQ

What is Gate to Source Channel Width of MOSFET?

The Gate to Source Channel Width of MOSFET formula is defined as the ratio of the width of the gate electrode to the width of the source electrode, expressed as a percentage and is represented as W_c = C_oc/(C_ox*L_ov) or Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length). Overlap capacitance refers to the capacitance that arises between two conductive regions in close proximity to each other, but not directly connected, Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits & Overlap Length is the average distance that the excess carriers can cover before they recombine.

How to calculate Gate to Source Channel Width of MOSFET?

The Gate to Source Channel Width of MOSFET formula is defined as the ratio of the width of the gate electrode to the width of the source electrode, expressed as a percentage is calculated using Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length). To calculate Gate to Source Channel Width of MOSFET, you need Overlap Capacitance (C_oc), Oxide Capacitance (C_ox) & Overlap Length (L_ov). With our tool, you need to enter the respective value for Overlap Capacitance, Oxide Capacitance & Overlap Length and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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