Gates on Critical Path Calculator

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✖A Duty cycle or power cycle is the fraction of one period in which a signal or system is active.ⓘ Duty Cycle [D]			+10% -10%
✖Off Current of a switch is a non-exist value in the reality. Real switches have normally very small off current which some times called the leakage current.ⓘ Off Current [i_off]			+10% -10%
✖Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state.ⓘ Base Collector Voltage [V_bc]			+10% -10%
✖Capacitance of Gate to Channel is the capacitance due to the overlap of the source and the channel regions by the polysilicon gate and is independent of applied voltage.ⓘ Capacitance of Gate to Channel [C_g]			+10% -10%

✖Gates on Critical Path are defined as the total number of the logic gate required during one cycle time in CMOS.ⓘ Gates on Critical Path [N_g]

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Formula

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Gates on Critical Path

Formula

`"N"_{"g"} = "D"*("i"_{"off"}*(10^"V"_{"bc"}))/("C"_{"g"}*"[BoltZ]"*"V"_{"bc"}) `

Example

`"0.000957"="1.3E^-25"*("0.01mA"*(10^"2.02V"))/("5.1mF"*"[BoltZ]"*"2.02V") `

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Download CMOS Power Metrics Formulas PDF

Gates on Critical Path Solution

STEP 0: Pre-Calculation Summary

Formula Used

Gates on Critical Path = Duty Cycle*(Off Current*(10^Base Collector Voltage))/(Capacitance of Gate to Channel*[BoltZ]*Base Collector Voltage)
N_g = D*(i_off*(10^V_bc))/(C_g*[BoltZ]*V_bc)
This formula uses 1 Constants, 5 Variables

Constants Used

[BoltZ] - Boltzmann constant Value Taken As 1.38064852E-23

Variables Used

Gates on Critical Path - Gates on Critical Path are defined as the total number of the logic gate required during one cycle time in CMOS.
Duty Cycle - A Duty cycle or power cycle is the fraction of one period in which a signal or system is active.
Off Current - (Measured in Ampere) - Off Current of a switch is a non-exist value in the reality. Real switches have normally very small off current which some times called the leakage current.
Base Collector Voltage - (Measured in Volt) - Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state.
Capacitance of Gate to Channel - (Measured in Farad) - Capacitance of Gate to Channel is the capacitance due to the overlap of the source and the channel regions by the polysilicon gate and is independent of applied voltage.

STEP 1: Convert Input(s) to Base Unit

Duty Cycle: 1.3E-25 --> No Conversion Required
Off Current: 0.01 Milliampere --> 1E-05 Ampere (Check conversion here)
Base Collector Voltage: 2.02 Volt --> 2.02 Volt No Conversion Required
Capacitance of Gate to Channel: 5.1 Millifarad --> 0.0051 Farad (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

N_g = D*(i_off*(10^V_bc))/(C_g*[BoltZ]*V_bc) --> 1.3E-25*(1E-05*(10^2.02))/(0.0051*[BoltZ]*2.02)

Evaluating ... ...

N_g = 0.000957058919420363

STEP 3: Convert Result to Output's Unit

0.000957058919420363 --> No Conversion Required

FINAL ANSWER

0.000957058919420363 ≈ 0.000957 <-- Gates on Critical Path

(Calculation completed in 00.004 seconds)

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< 17 CMOS Power Metrics Calculators

Gates on Critical Path

Go Gates on Critical Path = Duty Cycle*(Off Current*(10^Base Collector Voltage))/(Capacitance of Gate to Channel*[BoltZ]*Base Collector Voltage)

Subthreshold Leakage through OFF Transistors

Go Subthreshold Current = (CMOS Static Power/Base Collector Voltage)-(Gate Current+Contention Current+Junction Current)

Contention Current in Ratioed Circuits

Go Contention Current = (CMOS Static Power/Base Collector Voltage)-(Subthreshold Current+Gate Current+Junction Current)

Gate Leakage through Gate Dielectric

Go Gate Current = (CMOS Static Power/Base Collector Voltage)-(Subthreshold Current+Contention Current+Junction Current)

Output Switching at Load Power Consumption

Go Output Switching = Capacitive Load Power Consumption/(External Load Capacitance*Supply Voltage^2*Output Signal Frequency)

Capacitive Load Power Consumption

Go Capacitive Load Power Consumption = External Load Capacitance*Supply Voltage^2*Output Signal Frequency*Output Switching

Activity Factor

Go Activity Factor = Switching Power/(Capacitance*Base Collector Voltage^2*Frequency)

Switching Power

Go Switching Power = Activity Factor*(Capacitance*Base Collector Voltage^2*Frequency)

Power Supply Rejection Ratio

Go Power Supply Rejection Ratio = 20*log10(Input Voltage Ripple/Output Voltage Ripple)

Switching Power in CMOS

Go Switching Power = (Positive Voltage^2)*Frequency*Capacitance

Switching Energy in CMOS

Go Switching Energy in CMOS = Total Energy in CMOS-Leakage Energy in CMOS

Leakage Energy in CMOS

Go Leakage Energy in CMOS = Total Energy in CMOS-Switching Energy in CMOS

Total Energy in CMOS

Go Total Energy in CMOS = Switching Energy in CMOS+Leakage Energy in CMOS

Short-Circuit Power in CMOS

Go Short-Circuit Power = Dynamic Power-Switching Power

Dynamic Power in CMOS

Go Dynamic Power = Short-Circuit Power+Switching Power

Total Power in CMOS

Go Total Power = CMOS Static Power+Dynamic Power

Static Power in CMOS

Go CMOS Static Power = Total Power-Dynamic Power

Gates on Critical Path Formula

Gates on Critical Path = Duty Cycle*(Off Current*(10^Base Collector Voltage))/(Capacitance of Gate to Channel*[BoltZ]*Base Collector Voltage)
N_g = D*(i_off*(10^V_bc))/(C_g*[BoltZ]*V_bc)

What is Subthreshold conduction?

Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.

How to Calculate Gates on Critical Path?

Gates on Critical Path calculator uses Gates on Critical Path = Duty Cycle*(Off Current*(10^Base Collector Voltage))/(Capacitance of Gate to Channel*[BoltZ]*Base Collector Voltage) to calculate the Gates on Critical Path, The Gates on critical path formula is defined as the total number of the logic gate required during one cycle time in CMOS. Gates on Critical Path is denoted by N_g symbol.

How to calculate Gates on Critical Path using this online calculator? To use this online calculator for Gates on Critical Path, enter Duty Cycle (D), Off Current (i_off), Base Collector Voltage (V_bc) & Capacitance of Gate to Channel (C_g) and hit the calculate button. Here is how the Gates on Critical Path calculation can be explained with given input values -> 0.957059 = 1.3E-25*(1E-05*(10^2.02))/(5.1E-06*[BoltZ]*2.02) .

FAQ

What is Gates on Critical Path?

The Gates on critical path formula is defined as the total number of the logic gate required during one cycle time in CMOS and is represented as N_g = D*(i_off*(10^V_bc))/(C_g*[BoltZ]*V_bc) or Gates on Critical Path = Duty Cycle*(Off Current*(10^Base Collector Voltage))/(Capacitance of Gate to Channel*[BoltZ]*Base Collector Voltage). A Duty cycle or power cycle is the fraction of one period in which a signal or system is active, Off Current of a switch is a non-exist value in the reality. Real switches have normally very small off current which some times called the leakage current, Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state & Capacitance of Gate to Channel is the capacitance due to the overlap of the source and the channel regions by the polysilicon gate and is independent of applied voltage.

How to calculate Gates on Critical Path?

The Gates on critical path formula is defined as the total number of the logic gate required during one cycle time in CMOS is calculated using Gates on Critical Path = Duty Cycle*(Off Current*(10^Base Collector Voltage))/(Capacitance of Gate to Channel*[BoltZ]*Base Collector Voltage). To calculate Gates on Critical Path, you need Duty Cycle (D), Off Current (i_off), Base Collector Voltage (V_bc) & Capacitance of Gate to Channel (C_g). With our tool, you need to enter the respective value for Duty Cycle, Off Current, Base Collector Voltage & Capacitance of Gate to Channel and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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