Inversion Layer Charge at Pinch-Off Condition in PMOS Calculator

✖Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.ⓘ Oxide Capacitance [C_ox]			+10% -10%
✖The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET.ⓘ Voltage between Gate and Source [V_GS]			+10% -10%
✖Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.ⓘ Threshold Voltage [V_T]			+10% -10%
✖The voltage between drain and source is a key parameter in the operation of a field-effect transistor (FET) and is often referred to as the "drain-source voltage" or VDS.ⓘ Voltage between Drain and Source [V_DS]			+10% -10%

✖Inversion layer charge refers to the accumulation of charge carriers at the interface between the semiconductor and the insulating oxide layer when a voltage is applied to the gate electrode.ⓘ Inversion Layer Charge at Pinch-Off Condition in PMOS [Q_p]

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Formula

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Inversion Layer Charge at Pinch-Off Condition in PMOS

Formula

`"Q"_{"p"} = -"C"_{"ox"}*("V"_{"GS"}-"V"_{"T"}-"V"_{"DS"})`

Example

`"0.000232C/m²"=-"0.0008F"*("2.86V"-"0.7V"-"2.45V")`

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Inversion Layer Charge at Pinch-Off Condition in PMOS Solution

STEP 0: Pre-Calculation Summary

Formula Used

Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage-Voltage between Drain and Source)
Q_p = -C_ox*(V_GS-V_T-V_DS)
This formula uses 5 Variables

Variables Used

Inversion Layer Charge - (Measured in Coulomb per Square Meter) - Inversion layer charge refers to the accumulation of charge carriers at the interface between the semiconductor and the insulating oxide layer when a voltage is applied to the gate electrode.
Oxide Capacitance - (Measured in Farad) - Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.
Voltage between Gate and Source - (Measured in Volt) - The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET.
Threshold Voltage - (Measured in Volt) - Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.
Voltage between Drain and Source - (Measured in Volt) - The voltage between drain and source is a key parameter in the operation of a field-effect transistor (FET) and is often referred to as the "drain-source voltage" or VDS.

STEP 1: Convert Input(s) to Base Unit

Oxide Capacitance: 0.0008 Farad --> 0.0008 Farad No Conversion Required
Voltage between Gate and Source: 2.86 Volt --> 2.86 Volt No Conversion Required
Threshold Voltage: 0.7 Volt --> 0.7 Volt No Conversion Required
Voltage between Drain and Source: 2.45 Volt --> 2.45 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

Q_p = -C_ox*(V_GS-V_T-V_DS) --> -0.0008*(2.86-0.7-2.45)

Evaluating ... ...

Q_p = 0.000232

STEP 3: Convert Result to Output's Unit

0.000232 Coulomb per Square Meter --> No Conversion Required

FINAL ANSWER

0.000232 Coulomb per Square Meter <-- Inversion Layer Charge

(Calculation completed in 00.004 seconds)

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< 14 P-Channel Enhancement Calculators

Overall Drain Current of PMOS Transistor

Go Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2*(1+Voltage between Drain and Source/modulus(Early Voltage))

Drain Current in Triode Region of PMOS Transistor

Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2)

Body Effect in PMOS

Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))

Drain Current in Triode Region of PMOS Transistor given Vsd

Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source

Drain Current in Saturation Region of PMOS Transistor

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2

Backgate Effect Parameter in PMOS

Go Backgate Effect Parameter = sqrt(2*[Permitivity-vacuum]*[Charge-e]*Donor Concentration)/Oxide Capacitance

Drain Current from Source to Drain

Go Drain Current = (Width of Junction*Inversion Layer Charge*Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel)

Inversion Layer Charge at Pinch-Off Condition in PMOS

Go Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage-Voltage between Drain and Source)

Drain Current in Saturation Region of PMOS Transistor given Vov

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2

Inversion Layer Charge in PMOS

Go Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage)

Current in Inversion Channel of PMOS

Go Drain Current = (Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion)

Current in Inversion Channel of PMOS given Mobility

Go Drift Velocity of Inversion = Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel

Overdrive Voltage of PMOS

Go Effective Voltage = Voltage between Gate and Source-modulus(Threshold Voltage)

Process Transconductance Parameter of PMOS

Go Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance

Inversion Layer Charge at Pinch-Off Condition in PMOS Formula

Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage-Voltage between Drain and Source)
Q_p = -C_ox*(V_GS-V_T-V_DS)

What happens when inversion layer is formed in PMOS?

The inversion layer provides a channel through which current can pass between source and drain terminals. Varying the voltage between the gate and body modulates the conductivity of this layer and thereby controls the current flow between drain and source. This is known as enhancement mode.

How to Calculate Inversion Layer Charge at Pinch-Off Condition in PMOS?

Inversion Layer Charge at Pinch-Off Condition in PMOS calculator uses Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage-Voltage between Drain and Source) to calculate the Inversion Layer Charge, The Inversion Layer Charge at Pinch-Off Condition in PMOS formula is defined as the inversion layer charge at pinch-off condition in a PMOS transistor is the amount of charge that accumulates at the interface between the p-type substrate and the oxide layer when the transistor is in its off state, and it determines the conductance of the transistor when it is turned on. Inversion Layer Charge is denoted by Q_p symbol.

How to calculate Inversion Layer Charge at Pinch-Off Condition in PMOS using this online calculator? To use this online calculator for Inversion Layer Charge at Pinch-Off Condition in PMOS, enter Oxide Capacitance (C_ox), Voltage between Gate and Source (V_GS), Threshold Voltage (V_T) & Voltage between Drain and Source (V_DS) and hit the calculate button. Here is how the Inversion Layer Charge at Pinch-Off Condition in PMOS calculation can be explained with given input values -> 0.000232 = -0.0008*(2.86-0.7-2.45).

FAQ

What is Inversion Layer Charge at Pinch-Off Condition in PMOS?

The Inversion Layer Charge at Pinch-Off Condition in PMOS formula is defined as the inversion layer charge at pinch-off condition in a PMOS transistor is the amount of charge that accumulates at the interface between the p-type substrate and the oxide layer when the transistor is in its off state, and it determines the conductance of the transistor when it is turned on and is represented as Q_p = -C_ox*(V_GS-V_T-V_DS) or Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage-Voltage between Drain and Source). Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits, The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET, Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics & The voltage between drain and source is a key parameter in the operation of a field-effect transistor (FET) and is often referred to as the "drain-source voltage" or VDS.

How to calculate Inversion Layer Charge at Pinch-Off Condition in PMOS?

The Inversion Layer Charge at Pinch-Off Condition in PMOS formula is defined as the inversion layer charge at pinch-off condition in a PMOS transistor is the amount of charge that accumulates at the interface between the p-type substrate and the oxide layer when the transistor is in its off state, and it determines the conductance of the transistor when it is turned on is calculated using Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage-Voltage between Drain and Source). To calculate Inversion Layer Charge at Pinch-Off Condition in PMOS, you need Oxide Capacitance (C_ox), Voltage between Gate and Source (V_GS), Threshold Voltage (V_T) & Voltage between Drain and Source (V_DS). With our tool, you need to enter the respective value for Oxide Capacitance, Voltage between Gate and Source, Threshold Voltage & Voltage between Drain and Source and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Inversion Layer Charge?

In this formula, Inversion Layer Charge uses Oxide Capacitance, Voltage between Gate and Source, Threshold Voltage & Voltage between Drain and Source. We can use 1 other way(s) to calculate the same, which is/are as follows -

Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage)

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