Nominal Continuous Collector Current of IGBT Solution

STEP 0: Pre-Calculation Summary
Formula Used
Forward Current = (-Total Voltage of Collector and Emitter+sqrt((Total Voltage of Collector and Emitter)^2+4*Resistance of Collector and Emitter*((Maximum Operating Junction-Case Temperature)/Thermal Resistance)))/(2*Resistance of Collector and Emitter)
If = (-Vce+sqrt((Vce)^2+4*Rce*((Tjmax-Tc)/Rth(jc))))/(2*Rce)
This formula uses 1 Functions, 6 Variables
Functions Used
sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)
Variables Used
Forward Current - (Measured in Ampere) - Forward Current of an IGBT is the maximum current that can flow through the device when it is turned on.
Total Voltage of Collector and Emitter - (Measured in Volt) - Total Voltage of Collector and Emitter of an IGBT is known as the collector-emitter voltage (Vceo). It is the voltage drop across the IGBT when it is in the on-state.
Resistance of Collector and Emitter - (Measured in Ohm) - Resistance of Collector and Emitter of an IGBT, also known as the on-state resistance (Ron) , is the resistance that the IGBT presents to the flow of current.
Maximum Operating Junction - (Measured in Kelvin) - The maximum operating junction temperature (TJmax) of an IGBT is the highest temperature at which the IGBT can safely operate. It is typically specified in degrees Celsius (°C).
Case Temperature - (Measured in Kelvin) - Case Temperature of an IGBT is the temperature of the IGBT's metal case. It is typically measured in degrees Celsius (°C).
Thermal Resistance - (Measured in Ohm) - Thermal resistance is the resistance of a material to the flow of heat. It is a measure of how well a material conducts heat.
STEP 1: Convert Input(s) to Base Unit
Total Voltage of Collector and Emitter: 21.56 Volt --> 21.56 Volt No Conversion Required
Resistance of Collector and Emitter: 12.546 Kilohm --> 12546 Ohm (Check conversion ​here)
Maximum Operating Junction: 283 Celsius --> 556.15 Kelvin (Check conversion ​here)
Case Temperature: 250 Celsius --> 523.15 Kelvin (Check conversion ​here)
Thermal Resistance: 0.456 Kilohm --> 456 Ohm (Check conversion ​here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
If = (-Vce+sqrt((Vce)^2+4*Rce*((Tjmax-Tc)/Rth(jc))))/(2*Rce) --> (-21.56+sqrt((21.56)^2+4*12546*((556.15-523.15)/456)))/(2*12546)
Evaluating ... ...
If = 0.00169155334065811
STEP 3: Convert Result to Output's Unit
0.00169155334065811 Ampere -->1.69155334065811 Milliampere (Check conversion ​here)
FINAL ANSWER
1.69155334065811 1.691553 Milliampere <-- Forward Current
(Calculation completed in 00.004 seconds)

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8 IGBT Calculators

Nominal Continuous Collector Current of IGBT
​ Go Forward Current = (-Total Voltage of Collector and Emitter+sqrt((Total Voltage of Collector and Emitter)^2+4*Resistance of Collector and Emitter*((Maximum Operating Junction-Case Temperature)/Thermal Resistance)))/(2*Resistance of Collector and Emitter)
Voltage Drop in IGBT in ON-State
​ Go Voltage Drop ON Stage = Forward Current*N Channel Resistance+Forward Current*Drift Resistance+Voltage Pn Junction 1
Saturation Voltage of IGBT
​ Go Collector to Emitter Saturation Voltage = Base Emitter Voltage of PNP Transistor+Drain Current*(Conductivity Resistance+N Channel Resistance)
IGBT Turn OFF Time
​ Go Turn OFF Time = Delay Time+Initial Fall Time+Final Fall Time
Maximum Power Dissipation in IGBT
​ Go Maximum Power Dissipation = Maximum Operating Junction/Junction to Case Angle
Input Capacitance of IGBT
​ Go Input Capacitance = Gate to Emitter Capacitance+Gate to Collector Capacitance
Breakdown Voltage of Forward Biased of IGBT
​ Go Breakdown Voltage on Safe Operating Area = (5.34*10^13)/((Net Positive Charge)^(3/4))
Emitter Current of IGBT
​ Go Emitter Current = Hole Current+Electronic Current

Nominal Continuous Collector Current of IGBT Formula

Forward Current = (-Total Voltage of Collector and Emitter+sqrt((Total Voltage of Collector and Emitter)^2+4*Resistance of Collector and Emitter*((Maximum Operating Junction-Case Temperature)/Thermal Resistance)))/(2*Resistance of Collector and Emitter)
If = (-Vce+sqrt((Vce)^2+4*Rce*((Tjmax-Tc)/Rth(jc))))/(2*Rce)

What is Nominal continuous collector current ?


The nominal continuous collector current of an IGBT is the maximum current that the IGBT can safely carry continuously without exceeding its maximum operating junction temperature. It is typically specified in amperes (A) and is measured at a specific case temperature. The nominal continuous collector current is an important parameter to consider when choosing an IGBT for a particular application. It is important to choose an IGBT with a nominal continuous collector current that is greater than the maximum current that will flow through the device. This will ensure that the IGBT operates reliably and has a long service life.

How to Calculate Nominal Continuous Collector Current of IGBT?

Nominal Continuous Collector Current of IGBT calculator uses Forward Current = (-Total Voltage of Collector and Emitter+sqrt((Total Voltage of Collector and Emitter)^2+4*Resistance of Collector and Emitter*((Maximum Operating Junction-Case Temperature)/Thermal Resistance)))/(2*Resistance of Collector and Emitter) to calculate the Forward Current, Nominal Continuous Collector Current of IGBT, often denoted as Ic , is a critical electrical parameter used to specify the maximum current that an electronic component, typically a transistor such as a bipolar junction transistor (BJT) or an insulated gate bipolar transistor (IGBT), can carry continuously in its ON-state without being damaged. This parameter is crucial in designing and operating electronic circuits, especially in power electronics and switching applications. Forward Current is denoted by If symbol.

How to calculate Nominal Continuous Collector Current of IGBT using this online calculator? To use this online calculator for Nominal Continuous Collector Current of IGBT, enter Total Voltage of Collector and Emitter (Vce), Resistance of Collector and Emitter (Rce), Maximum Operating Junction (Tjmax), Case Temperature (Tc) & Thermal Resistance (Rth(jc)) and hit the calculate button. Here is how the Nominal Continuous Collector Current of IGBT calculation can be explained with given input values -> 1691.553 = (-21.56+sqrt((21.56)^2+4*12546*((556.15-523.15)/456)))/(2*12546).

FAQ

What is Nominal Continuous Collector Current of IGBT?
Nominal Continuous Collector Current of IGBT, often denoted as Ic , is a critical electrical parameter used to specify the maximum current that an electronic component, typically a transistor such as a bipolar junction transistor (BJT) or an insulated gate bipolar transistor (IGBT), can carry continuously in its ON-state without being damaged. This parameter is crucial in designing and operating electronic circuits, especially in power electronics and switching applications and is represented as If = (-Vce+sqrt((Vce)^2+4*Rce*((Tjmax-Tc)/Rth(jc))))/(2*Rce) or Forward Current = (-Total Voltage of Collector and Emitter+sqrt((Total Voltage of Collector and Emitter)^2+4*Resistance of Collector and Emitter*((Maximum Operating Junction-Case Temperature)/Thermal Resistance)))/(2*Resistance of Collector and Emitter). Total Voltage of Collector and Emitter of an IGBT is known as the collector-emitter voltage (Vceo). It is the voltage drop across the IGBT when it is in the on-state, Resistance of Collector and Emitter of an IGBT, also known as the on-state resistance (Ron) , is the resistance that the IGBT presents to the flow of current, The maximum operating junction temperature (TJmax) of an IGBT is the highest temperature at which the IGBT can safely operate. It is typically specified in degrees Celsius (°C), Case Temperature of an IGBT is the temperature of the IGBT's metal case. It is typically measured in degrees Celsius (°C) & Thermal resistance is the resistance of a material to the flow of heat. It is a measure of how well a material conducts heat.
How to calculate Nominal Continuous Collector Current of IGBT?
Nominal Continuous Collector Current of IGBT, often denoted as Ic , is a critical electrical parameter used to specify the maximum current that an electronic component, typically a transistor such as a bipolar junction transistor (BJT) or an insulated gate bipolar transistor (IGBT), can carry continuously in its ON-state without being damaged. This parameter is crucial in designing and operating electronic circuits, especially in power electronics and switching applications is calculated using Forward Current = (-Total Voltage of Collector and Emitter+sqrt((Total Voltage of Collector and Emitter)^2+4*Resistance of Collector and Emitter*((Maximum Operating Junction-Case Temperature)/Thermal Resistance)))/(2*Resistance of Collector and Emitter). To calculate Nominal Continuous Collector Current of IGBT, you need Total Voltage of Collector and Emitter (Vce), Resistance of Collector and Emitter (Rce), Maximum Operating Junction (Tjmax), Case Temperature (Tc) & Thermal Resistance (Rth(jc)). With our tool, you need to enter the respective value for Total Voltage of Collector and Emitter, Resistance of Collector and Emitter, Maximum Operating Junction, Case Temperature & Thermal Resistance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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