Input Capacitance of IGBT Solution

STEP 0: Pre-Calculation Summary
Formula Used
Input Capacitance = Gate to Emitter Capacitance+Gate to Collector Capacitance
Cin = C(g-e)+C(g-c)
This formula uses 3 Variables
Variables Used
Input Capacitance - (Measured in Farad) - Input Capacitance of an IGBT is the capacitance between the gate and emitter terminals of the device.
Gate to Emitter Capacitance - (Measured in Farad) - Gate to Emitter Capacitance(CGE) of an IGBT is the capacitance between the gate and emitter terminals of the device.
Gate to Collector Capacitance - (Measured in Farad) - Gate to Collector Capacitance also known as the Miller capacitance, is a parasitic capacitance that exists between the gate and collector terminals of an IGBT.
STEP 1: Convert Input(s) to Base Unit
Gate to Emitter Capacitance: 0.21 Farad --> 0.21 Farad No Conversion Required
Gate to Collector Capacitance: 5.55 Farad --> 5.55 Farad No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Cin = C(g-e)+C(g-c) --> 0.21+5.55
Evaluating ... ...
Cin = 5.76
STEP 3: Convert Result to Output's Unit
5.76 Farad --> No Conversion Required
FINAL ANSWER
5.76 Farad <-- Input Capacitance
(Calculation completed in 00.004 seconds)

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Created by Mohamed Fazil V
Acharya institute of technology (AIT), Bengaluru
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8 IGBT Calculators

Nominal Continuous Collector Current of IGBT
​ Go Forward Current = (-Total Voltage of Collector and Emitter+sqrt((Total Voltage of Collector and Emitter)^2+4*Resistance of Collector and Emitter*((Maximum Operating Junction-Case Temperature)/Thermal Resistance)))/(2*Resistance of Collector and Emitter)
Voltage Drop in IGBT in ON-State
​ Go Voltage Drop ON Stage = Forward Current*N Channel Resistance+Forward Current*Drift Resistance+Voltage Pn Junction 1
Saturation Voltage of IGBT
​ Go Collector to Emitter Saturation Voltage = Base Emitter Voltage of PNP Transistor+Drain Current*(Conductivity Resistance+N Channel Resistance)
IGBT Turn OFF Time
​ Go Turn OFF Time = Delay Time+Initial Fall Time+Final Fall Time
Maximum Power Dissipation in IGBT
​ Go Maximum Power Dissipation = Maximum Operating Junction/Junction to Case Angle
Input Capacitance of IGBT
​ Go Input Capacitance = Gate to Emitter Capacitance+Gate to Collector Capacitance
Breakdown Voltage of Forward Biased of IGBT
​ Go Breakdown Voltage on Safe Operating Area = (5.34*10^13)/((Net Positive Charge)^(3/4))
Emitter Current of IGBT
​ Go Emitter Current = Hole Current+Electronic Current

Input Capacitance of IGBT Formula

Input Capacitance = Gate to Emitter Capacitance+Gate to Collector Capacitance
Cin = C(g-e)+C(g-c)

What is Input Capacitance ?

The input capacitance of an IGBT (Insulated Gate Bipolar Transistor) is a parameter that characterizes the capacitive behavior of the IGBT at its input, which is the gate terminal. It is often denoted as Cies (Input Capacitance) in datasheets and technical specifications. Designers of IGBT-based circuits need to consider Cies when selecting appropriate gate drivers and IGBTs for their applications to ensure proper switching performance and efficient operation. Minimizing the impact of input capacitance is often a key consideration in achieving high-performance power electronic systems.

How to Calculate Input Capacitance of IGBT?

Input Capacitance of IGBT calculator uses Input Capacitance = Gate to Emitter Capacitance+Gate to Collector Capacitance to calculate the Input Capacitance, Input Capacitance of IGBT of an Insulated Gate Bipolar Transistor (IGBT) is a parameter that characterizes the capacitive behavior of the IGBT at its input, specifically at the gate terminal. The input capacitance is typically denoted as Cies (Input Capacitance) in datasheets and technical specifications. Input Capacitance is denoted by Cin symbol.

How to calculate Input Capacitance of IGBT using this online calculator? To use this online calculator for Input Capacitance of IGBT, enter Gate to Emitter Capacitance (C(g-e)) & Gate to Collector Capacitance (C(g-c)) and hit the calculate button. Here is how the Input Capacitance of IGBT calculation can be explained with given input values -> 5.76 = 0.21+5.55.

FAQ

What is Input Capacitance of IGBT?
Input Capacitance of IGBT of an Insulated Gate Bipolar Transistor (IGBT) is a parameter that characterizes the capacitive behavior of the IGBT at its input, specifically at the gate terminal. The input capacitance is typically denoted as Cies (Input Capacitance) in datasheets and technical specifications and is represented as Cin = C(g-e)+C(g-c) or Input Capacitance = Gate to Emitter Capacitance+Gate to Collector Capacitance. Gate to Emitter Capacitance(CGE) of an IGBT is the capacitance between the gate and emitter terminals of the device & Gate to Collector Capacitance also known as the Miller capacitance, is a parasitic capacitance that exists between the gate and collector terminals of an IGBT.
How to calculate Input Capacitance of IGBT?
Input Capacitance of IGBT of an Insulated Gate Bipolar Transistor (IGBT) is a parameter that characterizes the capacitive behavior of the IGBT at its input, specifically at the gate terminal. The input capacitance is typically denoted as Cies (Input Capacitance) in datasheets and technical specifications is calculated using Input Capacitance = Gate to Emitter Capacitance+Gate to Collector Capacitance. To calculate Input Capacitance of IGBT, you need Gate to Emitter Capacitance (C(g-e)) & Gate to Collector Capacitance (C(g-c)). With our tool, you need to enter the respective value for Gate to Emitter Capacitance & Gate to Collector Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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