Voltage Drop in IGBT in ON-State Calculator

✖Forward Current of an IGBT is the maximum current that can flow through the device when it is turned on.ⓘ Forward Current [I_f]			+10% -10%
✖N Channel Resistance of an IGBT is the resistance of the semiconductor material in the device when the IGBT is turned on.ⓘ N Channel Resistance [R_ch]			+10% -10%
✖Drift Resistance of an IGBT is N-drift region of the semiconductor material in the device. The N-drift region is a thick doped silicon that separates the collector from the P-base region.ⓘ Drift Resistance [R_d]			+10% -10%
✖Voltage Pn Junction 1 is caused by the potential barrier that exists at the junction. This potential barrier is created by the diffusion of charge carriers across the junction.ⓘ Voltage Pn Junction 1 [V_j1]			+10% -10%

✖Voltage Drop ON Stage in an IGBT is the voltage difference between the collector and emitter terminals when the IGBT is turned on. It is semiconductor material in the device.ⓘ Voltage Drop in IGBT in ON-State [V_drop]

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Formula

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Voltage Drop in IGBT in ON-State

Formula

`"V"_{"drop"} = "I"_{"f"}*"R"_{"ch"}+"I"_{"f"}*"R"_{"d"}+"V"_{"j1"}`

Example

`"20.2533V"="1.69mA"*"10.59kΩ"+"1.69mA"*"0.98kΩ"+"0.7V"`

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Voltage Drop in IGBT in ON-State Solution

STEP 0: Pre-Calculation Summary

Formula Used

Voltage Drop ON Stage = Forward Current*N Channel Resistance+Forward Current*Drift Resistance+Voltage Pn Junction 1
V_drop = I_f*R_ch+I_f*R_d+V_j1
This formula uses 5 Variables

Variables Used

Voltage Drop ON Stage - (Measured in Volt) - Voltage Drop ON Stage in an IGBT is the voltage difference between the collector and emitter terminals when the IGBT is turned on. It is semiconductor material in the device.
Forward Current - (Measured in Ampere) - Forward Current of an IGBT is the maximum current that can flow through the device when it is turned on.
N Channel Resistance - (Measured in Ohm) - N Channel Resistance of an IGBT is the resistance of the semiconductor material in the device when the IGBT is turned on.
Drift Resistance - (Measured in Ohm) - Drift Resistance of an IGBT is N-drift region of the semiconductor material in the device. The N-drift region is a thick doped silicon that separates the collector from the P-base region.
Voltage Pn Junction 1 - (Measured in Volt) - Voltage Pn Junction 1 is caused by the potential barrier that exists at the junction. This potential barrier is created by the diffusion of charge carriers across the junction.

STEP 1: Convert Input(s) to Base Unit

Forward Current: 1.69 Milliampere --> 0.00169 Ampere (Check conversion here)
N Channel Resistance: 10.59 Kilohm --> 10590 Ohm (Check conversion here)
Drift Resistance: 0.98 Kilohm --> 980 Ohm (Check conversion here)
Voltage Pn Junction 1: 0.7 Volt --> 0.7 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

V_drop = I_f*R_ch+I_f*R_d+V_j1 --> 0.00169*10590+0.00169*980+0.7

Evaluating ... ...

V_drop = 20.2533

STEP 3: Convert Result to Output's Unit

20.2533 Volt --> No Conversion Required

FINAL ANSWER

20.2533 Volt <-- Voltage Drop ON Stage

(Calculation completed in 00.004 seconds)

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< 8 IGBT Calculators

Nominal Continuous Collector Current of IGBT

Go Forward Current = (-Total Voltage of Collector and Emitter+sqrt((Total Voltage of Collector and Emitter)^2+4*Resistance of Collector and Emitter*((Maximum Operating Junction-Case Temperature)/Thermal Resistance)))/(2*Resistance of Collector and Emitter)

Voltage Drop in IGBT in ON-State

Go Voltage Drop ON Stage = Forward Current*N Channel Resistance+Forward Current*Drift Resistance+Voltage Pn Junction 1

Saturation Voltage of IGBT

Go Collector to Emitter Saturation Voltage = Base Emitter Voltage of PNP Transistor+Drain Current*(Conductivity Resistance+N Channel Resistance)

IGBT Turn OFF Time

Go Turn OFF Time = Delay Time+Initial Fall Time+Final Fall Time

Maximum Power Dissipation in IGBT

Go Maximum Power Dissipation = Maximum Operating Junction/Junction to Case Angle

Input Capacitance of IGBT

Go Input Capacitance = Gate to Emitter Capacitance+Gate to Collector Capacitance

Breakdown Voltage of Forward Biased of IGBT

Go Breakdown Voltage on Safe Operating Area = (5.34*10^13)/((Net Positive Charge)^(3/4))

Emitter Current of IGBT

Go Emitter Current = Hole Current+Electronic Current

Voltage Drop in IGBT in ON-State Formula

Voltage Drop ON Stage = Forward Current*N Channel Resistance+Forward Current*Drift Resistance+Voltage Pn Junction 1
V_drop = I_f*R_ch+I_f*R_d+V_j1

What is Voltage Drop in IGBT in ON-State ?

Voltage drop in an IGBT (Insulated Gate Bipolar Transistor) in the ON-state refers to the voltage that is lost or dissipated across the IGBT when it is conducting current. When an IGBT is in the ON-state, it is allowing current to flow from the collector to the emitter. This conduction state is typically characterized by a certain voltage drop, which is also known as the "ON-state voltage" or "V_CE(sat) " (Collector-Emitter Saturation Voltage).

How to Calculate Voltage Drop in IGBT in ON-State?

Voltage Drop in IGBT in ON-State calculator uses Voltage Drop ON Stage = Forward Current*N Channel Resistance+Forward Current*Drift Resistance+Voltage Pn Junction 1 to calculate the Voltage Drop ON Stage, Voltage Drop in IGBT in ON-State is caused by the resistance of the semiconductor material in the device, as well as the resistance of the bond wires and other internal connections. The voltage drop in an IGBT on-state can be reduced by using a larger device with a lower on-state resistance. Another way to reduce the voltage drop is to reduce the current flowing through the device. Voltage Drop ON Stage is denoted by V_drop symbol.

How to calculate Voltage Drop in IGBT in ON-State using this online calculator? To use this online calculator for Voltage Drop in IGBT in ON-State, enter Forward Current (I_f), N Channel Resistance (R_ch), Drift Resistance (R_d) & Voltage Pn Junction 1 (V_j1) and hit the calculate button. Here is how the Voltage Drop in IGBT in ON-State calculation can be explained with given input values -> 18.59876 = 0.00169*10590+0.00169*0.98+0.7.

FAQ

What is Voltage Drop in IGBT in ON-State?

Voltage Drop in IGBT in ON-State is caused by the resistance of the semiconductor material in the device, as well as the resistance of the bond wires and other internal connections. The voltage drop in an IGBT on-state can be reduced by using a larger device with a lower on-state resistance. Another way to reduce the voltage drop is to reduce the current flowing through the device and is represented as V_drop = I_f*R_ch+I_f*R_d+V_j1 or Voltage Drop ON Stage = Forward Current*N Channel Resistance+Forward Current*Drift Resistance+Voltage Pn Junction 1. Forward Current of an IGBT is the maximum current that can flow through the device when it is turned on, N Channel Resistance of an IGBT is the resistance of the semiconductor material in the device when the IGBT is turned on, Drift Resistance of an IGBT is N-drift region of the semiconductor material in the device. The N-drift region is a thick doped silicon that separates the collector from the P-base region & Voltage Pn Junction 1 is caused by the potential barrier that exists at the junction. This potential barrier is created by the diffusion of charge carriers across the junction.

How to calculate Voltage Drop in IGBT in ON-State?

Voltage Drop in IGBT in ON-State is caused by the resistance of the semiconductor material in the device, as well as the resistance of the bond wires and other internal connections. The voltage drop in an IGBT on-state can be reduced by using a larger device with a lower on-state resistance. Another way to reduce the voltage drop is to reduce the current flowing through the device is calculated using Voltage Drop ON Stage = Forward Current*N Channel Resistance+Forward Current*Drift Resistance+Voltage Pn Junction 1. To calculate Voltage Drop in IGBT in ON-State, you need Forward Current (I_f), N Channel Resistance (R_ch), Drift Resistance (R_d) & Voltage Pn Junction 1 (V_j1). With our tool, you need to enter the respective value for Forward Current, N Channel Resistance, Drift Resistance & Voltage Pn Junction 1 and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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