Recombination Lifetime Calculator

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Energy Band & Charge Carrier

Electrons & Holes

Semiconductor Carriers

SSD Junction

✖Proportionality for recombination is denoted by the symbol αr.ⓘ Proportionality for Recombination [α_r]			+10% -10%
✖Holes Concentration in Valance Band refers to the quantity or abundance of holes present in the valence band of a semiconductor material.ⓘ Holes Concentration in Valance Band [p₀]			+10% -10%

✖Recombination Lifetime the average time it takes an excess minority carrier to recombine.ⓘ Recombination Lifetime [τ_n]

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Formula

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Recombination Lifetime

Formula

`"τ"_{"n"} = ("α"_{"r"}*"p"_{"0"})^-1 `

Example

`"3.6E^-6s"=("1.2e-6m³/s"*"2.3e11/m³")^-1 `

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Download Energy Band & Charge Carrier Formulas PDF

Recombination Lifetime Solution

STEP 0: Pre-Calculation Summary

Formula Used

Recombination Lifetime = (Proportionality for Recombination*Holes Concentration in Valance Band)^-1
τ_n = (α_r*p₀)^-1
This formula uses 3 Variables

Variables Used

Recombination Lifetime - (Measured in Second) - Recombination Lifetime the average time it takes an excess minority carrier to recombine.
Proportionality for Recombination - (Measured in Cubic Meter per Second) - Proportionality for recombination is denoted by the symbol αr.
Holes Concentration in Valance Band - (Measured in 1 per Cubic Meter) - Holes Concentration in Valance Band refers to the quantity or abundance of holes present in the valence band of a semiconductor material.

STEP 1: Convert Input(s) to Base Unit

Proportionality for Recombination: 1.2E-06 Cubic Meter per Second --> 1.2E-06 Cubic Meter per Second No Conversion Required
Holes Concentration in Valance Band: 230000000000 1 per Cubic Meter --> 230000000000 1 per Cubic Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

τ_n = (α_r*p₀)^-1 --> (1.2E-06*230000000000)^-1

Evaluating ... ...

τ_n = 3.6231884057971E-06

STEP 3: Convert Result to Output's Unit

3.6231884057971E-06 Second --> No Conversion Required

FINAL ANSWER

3.6231884057971E-06 ≈ 3.6E-6 Second <-- Recombination Lifetime

(Calculation completed in 00.004 seconds)

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Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

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< 20 Energy Band & Charge Carrier Calculators

Intrinsic Carrier Concentration

Go Intrinsic Carrier Concentration = sqrt(Effective Density of State in Valence Band*Effective Density of State in Conduction Band) *exp(-Energy Gap/(2*[BoltZ]*Temperature))

Carrier Lifetime

Go Carrier Lifetime = 1/(Proportionality for Recombination*(Holes Concentration in Valance Band+Electron Concentration in Conduction Band))

Energy of Electron given Coulomb's Constant

Go Energy of Electron = (Quantum Number^2*pi^2*[hP]^2)/(2*[Mass-e]*Potential Well Length^2)

Steady State Electron Concentration

Go Steady State Carrier Concentration = Electron Concentration in Conduction Band+Excess Carrier Concentration

Effective Density of State

Go Effective Density of State in Conduction Band = Electron Concentration in Conduction Band/Fermi Function

Fermi Function

Go Fermi Function = Electron Concentration in Conduction Band/Effective Density of State in Conduction Band

Concentration in Conduction Band

Go Electron Concentration in Conduction Band = Effective Density of State in Conduction Band*Fermi Function

Effective Density State in Valence Band

Go Effective Density of State in Valence Band = Holes Concentration in Valance Band/(1-Fermi Function)

Recombination Lifetime

Go Recombination Lifetime = (Proportionality for Recombination*Holes Concentration in Valance Band)^-1

Concentration of Holes in Valence Band

Go Holes Concentration in Valance Band = Effective Density of State in Valence Band*(1-Fermi Function)

Thermal Generation Rate

Go Thermal Generation = Proportionality for Recombination*(Intrinsic Carrier Concentration ^2)

Distribution Coefficient

Go Distribution Coefficient = Impurity Concentration in Solid/Impurity Concentration in Liquid

Liquid Concentration

Go Impurity Concentration in Liquid = Impurity Concentration in Solid/Distribution Coefficient

Net Rate of Change in Conduction Band

Go Proportionality for Recombination = Thermal Generation/(Intrinsic Carrier Concentration^2)

Excess Carrier Concentration

Go Excess Carrier Concentration = Optical Generation Rate*Recombination Lifetime

Optical Generation Rate

Go Optical Generation Rate = Excess Carrier Concentration/Recombination Lifetime

Photoelectron Energy

Go Photoelectron Energy = [hP]*Frequency of Incident Light

Conduction Band Energy

Go Conduction Band Energy = Energy Gap+Valence Band Energy

Valence Band Energy

Go Valence Band Energy = Conduction Band Energy-Energy Gap

Energy Gap

Go Energy Gap = Conduction Band Energy-Valence Band Energy

Recombination Lifetime Formula

Recombination Lifetime = (Proportionality for Recombination*Holes Concentration in Valance Band)^-1
τ_n = (α_r*p₀)^-1

What is Intrinsic Concentration?

The intrinsic carrier concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.

How to Calculate Recombination Lifetime?

Recombination Lifetime calculator uses Recombination Lifetime = (Proportionality for Recombination*Holes Concentration in Valance Band)^-1 to calculate the Recombination Lifetime, The Recombination Lifetime formula is defined as the average time it takes an excess minority carrier to recombine. Recombination Lifetime is denoted by τ_n symbol.

How to calculate Recombination Lifetime using this online calculator? To use this online calculator for Recombination Lifetime, enter Proportionality for Recombination (α_r) & Holes Concentration in Valance Band (p₀) and hit the calculate button. Here is how the Recombination Lifetime calculation can be explained with given input values -> 3.6E-6 = (1.2E-06*230000000000)^-1 .

FAQ

What is Recombination Lifetime?

The Recombination Lifetime formula is defined as the average time it takes an excess minority carrier to recombine and is represented as τ_n = (α_r*p₀)^-1 or Recombination Lifetime = (Proportionality for Recombination*Holes Concentration in Valance Band)^-1. Proportionality for recombination is denoted by the symbol αr & Holes Concentration in Valance Band refers to the quantity or abundance of holes present in the valence band of a semiconductor material.

How to calculate Recombination Lifetime?

The Recombination Lifetime formula is defined as the average time it takes an excess minority carrier to recombine is calculated using Recombination Lifetime = (Proportionality for Recombination*Holes Concentration in Valance Band)^-1. To calculate Recombination Lifetime, you need Proportionality for Recombination (α_r) & Holes Concentration in Valance Band (p₀). With our tool, you need to enter the respective value for Proportionality for Recombination & Holes Concentration in Valance Band and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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