Width of Depletion Zone Calculator

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✖Input Voltage is the first power source that enters into any branch circuit etc. Input voltage is any voltage source that's derived from the supply voltage source.ⓘ Input Voltage [V_i]			+10% -10%
✖Gate Voltage is the voltage entering the gate source junction of a JFET transistor.ⓘ Gate Voltage [V_g]			+10% -10%
✖Doping Density refers to the concentration of dopant atoms in a semiconductor material. Dopants are impurity atoms that are intentionally introduced into the semiconductor.ⓘ Doping Density [N_d]			+10% -10%

✖Width of Depletion Region is a region in a semiconductor device where there are no free charge carriers.ⓘ Width of Depletion Zone [x_depl]

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Formula

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Width of Depletion Zone

Formula

`"x"_{"depl"} = sqrt(2*"[Permitivity-vacuum]"*("V"_{"i"}-"V"_{"g"})/("[Charge-e]"*"N"_{"d"}))`

Example

`"87.79909pm"=sqrt(2*"[Permitivity-vacuum]"*("15.9V"-"9.62V")/("[Charge-e]"*"9E221/cm³"))`

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Width of Depletion Zone Solution

STEP 0: Pre-Calculation Summary

Formula Used

Width of Depletion Region = sqrt(2*[Permitivity-vacuum]*(Input Voltage-Gate Voltage)/([Charge-e]*Doping Density))
x_depl = sqrt(2*[Permitivity-vacuum]*(V_i-V_g)/([Charge-e]*N_d))
This formula uses 2 Constants, 1 Functions, 4 Variables

Constants Used

[Permitivity-vacuum] - Permittivity of vacuum Value Taken As 8.85E-12 Farad / Meter
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19 Coulomb

Functions Used

sqrt - Squre root function, sqrt(Number)

Variables Used

Width of Depletion Region - (Measured in Meter) - Width of Depletion Region is a region in a semiconductor device where there are no free charge carriers.
Input Voltage - (Measured in Volt) - Input Voltage is the first power source that enters into any branch circuit etc. Input voltage is any voltage source that's derived from the supply voltage source.
Gate Voltage - (Measured in Volt) - Gate Voltage is the voltage entering the gate source junction of a JFET transistor.
Doping Density - (Measured in 1 per Cubic Meter) - Doping Density refers to the concentration of dopant atoms in a semiconductor material. Dopants are impurity atoms that are intentionally introduced into the semiconductor.

STEP 1: Convert Input(s) to Base Unit

Input Voltage: 15.9 Volt --> 15.9 Volt No Conversion Required
Gate Voltage: 9.62 Volt --> 9.62 Volt No Conversion Required
Doping Density: 9E+22 1 per Cubic Centimeter --> 9E+28 1 per Cubic Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

x_depl = sqrt(2*[Permitivity-vacuum]*(V_i-V_g)/([Charge-e]*N_d)) --> sqrt(2*[Permitivity-vacuum]*(15.9-9.62)/([Charge-e]*9E+28))

Evaluating ... ...

x_depl = 8.77990881212517E-11

STEP 3: Convert Result to Output's Unit

8.77990881212517E-11 Meter -->87.7990881212517 Picometer (Check conversion here)

FINAL ANSWER

87.7990881212517 Picometer <-- Width of Depletion Region

(Calculation completed in 00.000 seconds)

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Credits

Created by Sonu Kumar Keshri

National Institute of Technology, Patna (NITP), Patna

Sonu Kumar Keshri has created this Calculator and 0 more calculators!

Verified by Parminder Singh

Chandigarh University (CU), Punjab

Parminder Singh has verified this Calculator and 300+ more calculators!

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Go Round-trip D.C Transit Time = (2*Mass of Matter*Drift Space Length*Velocity of Electron)/((1.6*10^-19)*(Repler voltage+Accelerating Anode Voltage))

Width of Depletion Zone

Go Width of Depletion Region = sqrt(2*[Permitivity-vacuum]*(Input Voltage-Gate Voltage)/([Charge-e]*Doping Density))

Critical or Hull Cut-off Magnetic field

Go Critical Magnetic Field = ((8*Mass*Number of Electrons)^0.5)/(Cathode Radius*(1-(Anode Radius/Cathode Radius)^2))

Overall Noise Figure

Go Overall Noise Figure = Noise Figure of Mixer+Conversion Loss of Mixture*(Noise Figure in IF Amplifier -1)

Noise Figure 'IF' Amplifier

Go Noise Figure in IF Amplifier = Overall Noise Figure-Noise Figure of Mixer/Conversion Loss of Mixture+1

Noise Figure of Mixture

Go Noise Figure of Mixer = Overall Noise Figure-Conversion Loss of Mixture*(Noise Figure in IF Amplifier-1)

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Go Noise Ratio = (Receiver Sensitivity/Conversion Loss of Mixture)-(Noise Figure in IF Amplifier+1)

Receiver Sensitivity

Go Receiver Sensitivity = Conversion Loss of Mixture*(Noise Ratio+Noise Figure in IF Amplifier-1)

Modulation Linearity

Go Modulation Linearity = (Modulated Frequency 1-Modulated Frequency 2)/Modulated Frequency 1

Repetition Frequency of Pulse

Go Repetition Frequency = (Spectral Line Frequency-Carrier frequency)/Number of Samples

Carrier Frequency in Spectral Line

Go Carrier frequency = Spectral Line Frequency-Number of Samples*Repetition Frequency

Cyclotron Angular Frequency

Go Cyclotron Angular Frequency = Magnetic Field*Number of Electron/Mass

Plasma Frequency

Go Plasma Frequency = Reduced plasma frequency/Space Charge Reduction Factor

Space Charge Reduction Factor

Go Space Charge Reduction Factor = Reduced plasma frequency/Plasma Frequency

Reduced Plasma Frequency

Go Reduced plasma frequency = Plasma Frequency*Space Charge Reduction Factor

Second Modulating Frequency in Modulation Linearity

Go Modulated Frequency 2 = Modulated Frequency 1*(1+Modulation Linearity)

First Modulating Frequency in Modulation Linearity

Go Modulated Frequency 1 = Modulated Frequency 2/(1-Modulation Linearity)

Characteristic Admittance

Go Characteristic Admittance = 1/Distortion Line

RF Pulse Width(Teff)

Go RF Pulse Width = 1/Bandwidth Frequency

Width of Depletion Zone Formula

Width of Depletion Region = sqrt(2*[Permitivity-vacuum]*(Input Voltage-Gate Voltage)/([Charge-e]*Doping Density))
x_depl = sqrt(2*[Permitivity-vacuum]*(V_i-V_g)/([Charge-e]*N_d))

What does width of depletion region signifies?

This equation shows that the width of the depletion region is proportional to the square root of the gate voltage and the doping density of the semiconductor material. In general, the depletion region width decreases as the gate voltage increases and the doping density decreases.
The width of the depletion region in a MESFET is an important parameter that affects the device performance, such as the cutoff frequency and the noise figure. It is typically specified by the manufacturer and can be optimized through the device design to achieve desired device characteristics.

How to Calculate Width of Depletion Zone?

Width of Depletion Zone calculator uses Width of Depletion Region = sqrt(2*[Permitivity-vacuum]*(Input Voltage-Gate Voltage)/([Charge-e]*Doping Density)) to calculate the Width of Depletion Region, The Width of Depletion Zone formula is defined as a region in a semiconductor device where there are no free charge carriers .It depends on the doping levels of the semiconductor material, the gate voltage, and the physical dimensions of the device. Width of Depletion Region is denoted by x_depl symbol.

How to calculate Width of Depletion Zone using this online calculator? To use this online calculator for Width of Depletion Zone, enter Input Voltage (V_i), Gate Voltage (V_g) & Doping Density (N_d) and hit the calculate button. Here is how the Width of Depletion Zone calculation can be explained with given input values -> 87.79909 = sqrt(2*[Permitivity-vacuum]*(15.9-9.62)/([Charge-e]*9E+28)).

FAQ

What is Width of Depletion Zone?

The Width of Depletion Zone formula is defined as a region in a semiconductor device where there are no free charge carriers .It depends on the doping levels of the semiconductor material, the gate voltage, and the physical dimensions of the device and is represented as x_depl = sqrt(2*[Permitivity-vacuum]*(V_i-V_g)/([Charge-e]*N_d)) or Width of Depletion Region = sqrt(2*[Permitivity-vacuum]*(Input Voltage-Gate Voltage)/([Charge-e]*Doping Density)). Input Voltage is the first power source that enters into any branch circuit etc. Input voltage is any voltage source that's derived from the supply voltage source, Gate Voltage is the voltage entering the gate source junction of a JFET transistor & Doping Density refers to the concentration of dopant atoms in a semiconductor material. Dopants are impurity atoms that are intentionally introduced into the semiconductor.

How to calculate Width of Depletion Zone?

The Width of Depletion Zone formula is defined as a region in a semiconductor device where there are no free charge carriers .It depends on the doping levels of the semiconductor material, the gate voltage, and the physical dimensions of the device is calculated using Width of Depletion Region = sqrt(2*[Permitivity-vacuum]*(Input Voltage-Gate Voltage)/([Charge-e]*Doping Density)). To calculate Width of Depletion Zone, you need Input Voltage (V_i), Gate Voltage (V_g) & Doping Density (N_d). With our tool, you need to enter the respective value for Input Voltage, Gate Voltage & Doping Density and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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