## Width of Depletion Zone Solution

STEP 0: Pre-Calculation Summary
Formula Used
Width of Depletion Region = sqrt(2*[Permitivity-vacuum]*(Input Voltage-Gate Voltage)/([Charge-e]*Doping Density))
xdepl = sqrt(2*[Permitivity-vacuum]*(Vi-Vg)/([Charge-e]*Nd))
This formula uses 2 Constants, 1 Functions, 4 Variables
Constants Used
[Permitivity-vacuum] - Permittivity of vacuum Value Taken As 8.85E-12 Farad / Meter
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19 Coulomb
Functions Used
sqrt - Squre root function, sqrt(Number)
Variables Used
Width of Depletion Region - (Measured in Meter) - Width of Depletion Region is a region in a semiconductor device where there are no free charge carriers.
Input Voltage - (Measured in Volt) - Input Voltage is the first power source that enters into any branch circuit etc. Input voltage is any voltage source that's derived from the supply voltage source.
Gate Voltage - (Measured in Volt) - Gate Voltage is the voltage entering the gate source junction of a JFET transistor.
Doping Density - (Measured in 1 per Cubic Meter) - Doping Density refers to the concentration of dopant atoms in a semiconductor material. Dopants are impurity atoms that are intentionally introduced into the semiconductor.
STEP 1: Convert Input(s) to Base Unit
Input Voltage: 15.9 Volt --> 15.9 Volt No Conversion Required
Gate Voltage: 9.62 Volt --> 9.62 Volt No Conversion Required
Doping Density: 9E+22 1 per Cubic Centimeter --> 9E+28 1 per Cubic Meter (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
xdepl = sqrt(2*[Permitivity-vacuum]*(Vi-Vg)/([Charge-e]*Nd)) --> sqrt(2*[Permitivity-vacuum]*(15.9-9.62)/([Charge-e]*9E+28))
Evaluating ... ...
xdepl = 8.77990881212517E-11
STEP 3: Convert Result to Output's Unit
8.77990881212517E-11 Meter -->87.7990881212517 Picometer (Check conversion here)
87.7990881212517 Picometer <-- Width of Depletion Region
(Calculation completed in 00.000 seconds)
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## Credits

Created by Sonu Kumar Keshri
National Institute of Technology, Patna (NITP), Patna
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Chandigarh University (CU), Punjab
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Width of Depletion Zone
Width of Depletion Region = sqrt(2*[Permitivity-vacuum]*(Input Voltage-Gate Voltage)/([Charge-e]*Doping Density))
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## Width of Depletion Zone Formula

Width of Depletion Region = sqrt(2*[Permitivity-vacuum]*(Input Voltage-Gate Voltage)/([Charge-e]*Doping Density))
xdepl = sqrt(2*[Permitivity-vacuum]*(Vi-Vg)/([Charge-e]*Nd))

## What does width of depletion region signifies?

This equation shows that the width of the depletion region is proportional to the square root of the gate voltage and the doping density of the semiconductor material. In general, the depletion region width decreases as the gate voltage increases and the doping density decreases.
The width of the depletion region in a MESFET is an important parameter that affects the device performance, such as the cutoff frequency and the noise figure. It is typically specified by the manufacturer and can be optimized through the device design to achieve desired device characteristics.

## How to Calculate Width of Depletion Zone?

Width of Depletion Zone calculator uses Width of Depletion Region = sqrt(2*[Permitivity-vacuum]*(Input Voltage-Gate Voltage)/([Charge-e]*Doping Density)) to calculate the Width of Depletion Region, The Width of Depletion Zone formula is defined as a region in a semiconductor device where there are no free charge carriers .It depends on the doping levels of the semiconductor material, the gate voltage, and the physical dimensions of the device. Width of Depletion Region is denoted by xdepl symbol.

How to calculate Width of Depletion Zone using this online calculator? To use this online calculator for Width of Depletion Zone, enter Input Voltage (Vi), Gate Voltage (Vg) & Doping Density (Nd) and hit the calculate button. Here is how the Width of Depletion Zone calculation can be explained with given input values -> 87.79909 = sqrt(2*[Permitivity-vacuum]*(15.9-9.62)/([Charge-e]*9E+28)).

### FAQ

What is Width of Depletion Zone?
The Width of Depletion Zone formula is defined as a region in a semiconductor device where there are no free charge carriers .It depends on the doping levels of the semiconductor material, the gate voltage, and the physical dimensions of the device and is represented as xdepl = sqrt(2*[Permitivity-vacuum]*(Vi-Vg)/([Charge-e]*Nd)) or Width of Depletion Region = sqrt(2*[Permitivity-vacuum]*(Input Voltage-Gate Voltage)/([Charge-e]*Doping Density)). Input Voltage is the first power source that enters into any branch circuit etc. Input voltage is any voltage source that's derived from the supply voltage source, Gate Voltage is the voltage entering the gate source junction of a JFET transistor & Doping Density refers to the concentration of dopant atoms in a semiconductor material. Dopants are impurity atoms that are intentionally introduced into the semiconductor.
How to calculate Width of Depletion Zone?
The Width of Depletion Zone formula is defined as a region in a semiconductor device where there are no free charge carriers .It depends on the doping levels of the semiconductor material, the gate voltage, and the physical dimensions of the device is calculated using Width of Depletion Region = sqrt(2*[Permitivity-vacuum]*(Input Voltage-Gate Voltage)/([Charge-e]*Doping Density)). To calculate Width of Depletion Zone, you need Input Voltage (Vi), Gate Voltage (Vg) & Doping Density (Nd). With our tool, you need to enter the respective value for Input Voltage, Gate Voltage & Doping Density and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well. Let Others Know