Conductivity of P-Type Calculator

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✖Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.ⓘ Charge [q]			+10% -10%
✖Electron Doping Silicon Mobility characterizes how quickly an electron can move through a metal or semiconductor when pulled by an electric field.ⓘ Electron Doping Silicon Mobility [μ_n]			+10% -10%
✖Intrinsic Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.ⓘ Intrinsic Concentration [n_i]			+10% -10%
✖Equilibrium Concentration of P-Type electrons are the minority carriers and holes are the majority carriers.ⓘ Equilibrium Concentration of P-Type [N_a]			+10% -10%
✖Hole Doping Silicon Mobility is the ability of a hole to travel across a metal or semiconductor in the presence of an applied electric field.ⓘ Hole Doping Silicon Mobility [μ_p]			+10% -10%

✖Ohmic Conductivity is the measure of the capability of the material to pass the flow of electric current. Electrical conductivity differs from one material to another.ⓘ Conductivity of P-Type [σ]

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Formula

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Conductivity of P-Type

Formula

`"σ" = "q"*("μ"_{"n"}*("n"_{"i"}^2/"N"_{"a"})+"μ"_{"p"}*"N"_{"a"})`

Example

`"0.085666mho/cm"="5mC"*("0.38cm²/V*s"*(("1.32/cm³")^2/"7.1/cm³")+"2.4cm²/V*s"*"7.1/cm³")`

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Conductivity of P-Type Solution

STEP 0: Pre-Calculation Summary

Formula Used

Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type)
σ = q*(μ_n*(n_i^2/N_a)+μ_p*N_a)
This formula uses 6 Variables

Variables Used

Ohmic Conductivity - (Measured in Siemens per Meter) - Ohmic Conductivity is the measure of the capability of the material to pass the flow of electric current. Electrical conductivity differs from one material to another.
Charge - (Measured in Coulomb) - Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.
Electron Doping Silicon Mobility - (Measured in Square Meter per Volt per Second) - Electron Doping Silicon Mobility characterizes how quickly an electron can move through a metal or semiconductor when pulled by an electric field.
Intrinsic Concentration - (Measured in 1 per Cubic Meter) - Intrinsic Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.
Equilibrium Concentration of P-Type - (Measured in 1 per Cubic Meter) - Equilibrium Concentration of P-Type electrons are the minority carriers and holes are the majority carriers.
Hole Doping Silicon Mobility - (Measured in Square Meter per Volt per Second) - Hole Doping Silicon Mobility is the ability of a hole to travel across a metal or semiconductor in the presence of an applied electric field.

STEP 1: Convert Input(s) to Base Unit

Charge: 5 Millicoulomb --> 0.005 Coulomb (Check conversion here)
Electron Doping Silicon Mobility: 0.38 Square Centimeter per Volt Second --> 3.8E-05 Square Meter per Volt per Second (Check conversion here)
Intrinsic Concentration: 1.32 1 per Cubic Centimeter --> 1320000 1 per Cubic Meter (Check conversion here)
Equilibrium Concentration of P-Type: 7.1 1 per Cubic Centimeter --> 7100000 1 per Cubic Meter (Check conversion here)
Hole Doping Silicon Mobility: 2.4 Square Centimeter per Volt Second --> 0.00024 Square Meter per Volt per Second (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

σ = q*(μ_n*(n_i^2/N_a)+μ_p*N_a) --> 0.005*(3.8E-05*(1320000^2/7100000)+0.00024*7100000)

Evaluating ... ...

σ = 8.5666276056338

STEP 3: Convert Result to Output's Unit

8.5666276056338 Siemens per Meter -->0.085666276056338 Mho per Centimeter (Check conversion here)

FINAL ANSWER

0.085666276056338 ≈ 0.085666 Mho per Centimeter <-- Ohmic Conductivity

(Calculation completed in 00.004 seconds)

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Created by Rahul Gupta

Chandigarh University (CU), Mohali, Punjab

Rahul Gupta has created this Calculator and 25+ more calculators!

Verified by Ritwik Tripathi

Vellore Institute of Technology (VIT Vellore), Vellore

Ritwik Tripathi has verified this Calculator and 100+ more calculators!

< 19 Bipolar IC Fabrication Calculators

Resistance of Rectangular Parallelepiped

Go Resistance = ((Resistivity*Thickness of Layer)/(Width of Diffused Layer*Length of Diffused Layer))*(ln(Width of Bottom Rectangle/Length of Bottom Rectangle)/(Width of Bottom Rectangle-Length of Bottom Rectangle))

Impurity Atoms Per Unit Area

Go Total Impurity = Effective Diffusion*(Emitter Base Junction Area*((Charge*Intrinsic Concentration^2)/Collector Current)*exp(Voltage Base Emitter/Thermal Voltage))

Conductivity of N-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))

Conductivity of P-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type)

Ohmic Conductivity of Impurity

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)

Gate Source Capacitance Given Overlap Capacitance

Go Gate Source Capacitance = (2/3*Transistor's Width*Transistor's Length*Oxide Capacitance)+(Transistor's Width*Overlap Capacitance)

Collector-Current of PNP Transistor

Go Collector Current = (Charge*Emitter Base Junction Area*Equilibrium Concentration of N-Type*Diffusion Constant For PNP)/Base Width

Saturation Current in Transistor

Go Saturation Current = (Charge*Emitter Base Junction Area*Effective Diffusion*Intrinsic Concentration^2)/Total Impurity

Capacitive Load Power Consumption given Supply Voltage

Go Capacitive Load Power Consumption = Load Capacitance*Supply Voltage^2*Output Signal Frequency*Total Number of Outputs Switching

Sheet Resistance of Layer

Go Sheet Resistance = 1/(Charge*Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type*Thickness of Layer)

Resistance of Diffused Layer

Go Resistance = (1/Ohmic Conductivity)*(Length of Diffused Layer/(Width of Diffused Layer*Thickness of Layer))

Current Density Hole

Go Hole Current Density = Charge*Diffusion Constant For PNP*(Hole Equilibrium Concentration/Base Width)

Impurity with Intrinsic Concentration

Go Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity)

Emitter Injection Efficiency

Go Emmitter Injection Efficiency = Emitter Current/(Emitter Current due to Electrons+Emitter Current due to Holes)

Breakout Voltage of Collector Emitter

Go Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number)

Emitter Injection Efficiency given Doping Constants

Go Emmitter Injection Efficiency = Doping on N-side/(Doping on N-side+Doping on P-side)

Current Flowing in Zener Diode

Go Diode Current = (Input Reference Voltage-Stable Output Voltage)/Zener Resistance

Voltage to Frequency Conversion Factor in ICs

Go Voltage to Frequency Conversion Factor in ICs = Output Signal Frequency/Input Voltage

Base Transport Factor given Base Width

Go Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2)

Conductivity of P-Type Formula

Is p-type semiconductor more conductive?

In p-type semiconductor, number of holes are more whereas in N-type number of electrons are more. As, conductivity of electron is more than that of holes, so, among P-type and N-type semiconductor, N-type has more conductivity.

How to Calculate Conductivity of P-Type?

Conductivity of P-Type calculator uses Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type) to calculate the Ohmic Conductivity, The Conductivity of P-Type formula is due to the presence of holes. In a P-type semiconductor, the fermi level lies between the acceptor energy level and the valance band. Ohmic Conductivity is denoted by σ symbol.

How to calculate Conductivity of P-Type using this online calculator? To use this online calculator for Conductivity of P-Type, enter Charge (q), Electron Doping Silicon Mobility (μ_n), Intrinsic Concentration (n_i), Equilibrium Concentration of P-Type (N_a) & Hole Doping Silicon Mobility (μ_p) and hit the calculate button. Here is how the Conductivity of P-Type calculation can be explained with given input values -> 0.000857 = 0.005*(3.8E-05*(1320000^2/7100000)+0.00024*7100000).

FAQ

What is Conductivity of P-Type?

The Conductivity of P-Type formula is due to the presence of holes. In a P-type semiconductor, the fermi level lies between the acceptor energy level and the valance band and is represented as σ = q*(μ_n*(n_i^2/N_a)+μ_p*N_a) or Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type). Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons, Electron Doping Silicon Mobility characterizes how quickly an electron can move through a metal or semiconductor when pulled by an electric field, Intrinsic Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material, Equilibrium Concentration of P-Type electrons are the minority carriers and holes are the majority carriers & Hole Doping Silicon Mobility is the ability of a hole to travel across a metal or semiconductor in the presence of an applied electric field.

How to calculate Conductivity of P-Type?

The Conductivity of P-Type formula is due to the presence of holes. In a P-type semiconductor, the fermi level lies between the acceptor energy level and the valance band is calculated using Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type). To calculate Conductivity of P-Type, you need Charge (q), Electron Doping Silicon Mobility (μ_n), Intrinsic Concentration (n_i), Equilibrium Concentration of P-Type (N_a) & Hole Doping Silicon Mobility (μ_p). With our tool, you need to enter the respective value for Charge, Electron Doping Silicon Mobility, Intrinsic Concentration, Equilibrium Concentration of P-Type & Hole Doping Silicon Mobility and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Ohmic Conductivity?

In this formula, Ohmic Conductivity uses Charge, Electron Doping Silicon Mobility, Intrinsic Concentration, Equilibrium Concentration of P-Type & Hole Doping Silicon Mobility. We can use 2 other way(s) to calculate the same, which is/are as follows -

Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)
Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))

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