Ohmic Conductivity of Impurity Calculator

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✖Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.ⓘ Charge [q]			+10% -10%
✖Electron Doping Silicon Mobility characterizes how quickly an electron can move through a metal or semiconductor when pulled by an electric field.ⓘ Electron Doping Silicon Mobility [μ_n]			+10% -10%
✖Electron Concentration is influenced by various factors such as temperature, impurities or dopants added to the semiconductor material, and external electric or magnetic fields.ⓘ Electron Concentration [n_e]			+10% -10%
✖Hole Doping Silicon Mobility is the ability of a hole to travel across a metal or semiconductor in the presence of an applied electric field.ⓘ Hole Doping Silicon Mobility [μ_p]			+10% -10%
✖Hole Concentration imply a greater number of available charge carriers in the material, affecting its conductivity and various semiconductor device.ⓘ Hole Concentration [p]			+10% -10%

✖Ohmic Conductivity is the measure of the capability of the material to pass the flow of electric current. Electrical conductivity differs from one material to another.ⓘ Ohmic Conductivity of Impurity [σ]

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Ohmic Conductivity of Impurity

Formula

`"σ" = "q"*("μ"_{"n"}*"n"_{"e"}+"μ"_{"p"}*"p")`

Example

`"0.10442mho/cm"="5mC"*("0.38cm²/V*s"*"50.6/cm³"+"2.4cm²/V*s"*"0.69/cm³")`

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Ohmic Conductivity of Impurity Solution

STEP 0: Pre-Calculation Summary

Formula Used

Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)
σ = q*(μ_n*n_e+μ_p*p)
This formula uses 6 Variables

Variables Used

Ohmic Conductivity - (Measured in Siemens per Meter) - Ohmic Conductivity is the measure of the capability of the material to pass the flow of electric current. Electrical conductivity differs from one material to another.
Charge - (Measured in Coulomb) - Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons.
Electron Doping Silicon Mobility - (Measured in Square Meter per Volt per Second) - Electron Doping Silicon Mobility characterizes how quickly an electron can move through a metal or semiconductor when pulled by an electric field.
Electron Concentration - (Measured in 1 per Cubic Meter) - Electron Concentration is influenced by various factors such as temperature, impurities or dopants added to the semiconductor material, and external electric or magnetic fields.
Hole Doping Silicon Mobility - (Measured in Square Meter per Volt per Second) - Hole Doping Silicon Mobility is the ability of a hole to travel across a metal or semiconductor in the presence of an applied electric field.
Hole Concentration - (Measured in 1 per Cubic Meter) - Hole Concentration imply a greater number of available charge carriers in the material, affecting its conductivity and various semiconductor device.

STEP 1: Convert Input(s) to Base Unit

Charge: 5 Millicoulomb --> 0.005 Coulomb (Check conversion here)
Electron Doping Silicon Mobility: 0.38 Square Centimeter per Volt Second --> 3.8E-05 Square Meter per Volt per Second (Check conversion here)
Electron Concentration: 50.6 1 per Cubic Centimeter --> 50600000 1 per Cubic Meter (Check conversion here)
Hole Doping Silicon Mobility: 2.4 Square Centimeter per Volt Second --> 0.00024 Square Meter per Volt per Second (Check conversion here)
Hole Concentration: 0.69 1 per Cubic Centimeter --> 690000 1 per Cubic Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

σ = q*(μ_n*n_e+μ_p*p) --> 0.005*(3.8E-05*50600000+0.00024*690000)

Evaluating ... ...

σ = 10.442

STEP 3: Convert Result to Output's Unit

10.442 Siemens per Meter -->0.10442 Mho per Centimeter (Check conversion here)

FINAL ANSWER

0.10442 Mho per Centimeter <-- Ohmic Conductivity

(Calculation completed in 00.004 seconds)

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Created by Rahul Gupta

Chandigarh University (CU), Mohali, Punjab

Rahul Gupta has created this Calculator and 25+ more calculators!

Verified by Parminder Singh

Chandigarh University (CU), Punjab

Parminder Singh has verified this Calculator and 600+ more calculators!

< 19 Bipolar IC Fabrication Calculators

Resistance of Rectangular Parallelepiped

Go Resistance = ((Resistivity*Thickness of Layer)/(Width of Diffused Layer*Length of Diffused Layer))*(ln(Width of Bottom Rectangle/Length of Bottom Rectangle)/(Width of Bottom Rectangle-Length of Bottom Rectangle))

Impurity Atoms Per Unit Area

Go Total Impurity = Effective Diffusion*(Emitter Base Junction Area*((Charge*Intrinsic Concentration^2)/Collector Current)*exp(Voltage Base Emitter/Thermal Voltage))

Conductivity of N-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))

Conductivity of P-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type)

Ohmic Conductivity of Impurity

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)

Gate Source Capacitance Given Overlap Capacitance

Go Gate Source Capacitance = (2/3*Transistor's Width*Transistor's Length*Oxide Capacitance)+(Transistor's Width*Overlap Capacitance)

Collector-Current of PNP Transistor

Go Collector Current = (Charge*Emitter Base Junction Area*Equilibrium Concentration of N-Type*Diffusion Constant For PNP)/Base Width

Saturation Current in Transistor

Go Saturation Current = (Charge*Emitter Base Junction Area*Effective Diffusion*Intrinsic Concentration^2)/Total Impurity

Capacitive Load Power Consumption given Supply Voltage

Go Capacitive Load Power Consumption = Load Capacitance*Supply Voltage^2*Output Signal Frequency*Total Number of Outputs Switching

Sheet Resistance of Layer

Go Sheet Resistance = 1/(Charge*Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type*Thickness of Layer)

Resistance of Diffused Layer

Go Resistance = (1/Ohmic Conductivity)*(Length of Diffused Layer/(Width of Diffused Layer*Thickness of Layer))

Current Density Hole

Go Hole Current Density = Charge*Diffusion Constant For PNP*(Hole Equilibrium Concentration/Base Width)

Impurity with Intrinsic Concentration

Go Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity)

Emitter Injection Efficiency

Go Emmitter Injection Efficiency = Emitter Current/(Emitter Current due to Electrons+Emitter Current due to Holes)

Breakout Voltage of Collector Emitter

Go Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number)

Emitter Injection Efficiency given Doping Constants

Go Emmitter Injection Efficiency = Doping on N-side/(Doping on N-side+Doping on P-side)

Current Flowing in Zener Diode

Go Diode Current = (Input Reference Voltage-Stable Output Voltage)/Zener Resistance

Voltage to Frequency Conversion Factor in ICs

Go Voltage to Frequency Conversion Factor in ICs = Output Signal Frequency/Input Voltage

Base Transport Factor given Base Width

Go Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2)

Ohmic Conductivity of Impurity Formula

Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)
σ = q*(μ_n*n_e+μ_p*p)

What is thermal conductivity of a semiconductor?

The thermal conductivity of the semiconductor material is one of the parameters that defines the thermal resistance of each heat flow path. Thermal conductivity is the measure of ease by which heat flows through a specific material. It is a material property that is independent of the material thickness.

How to Calculate Ohmic Conductivity of Impurity?

Ohmic Conductivity of Impurity calculator uses Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration) to calculate the Ohmic Conductivity, The Ohmic Conductivity of Impurity specifically refers to a linear relationship between the current passing through a material and the applied voltage. In the context of impurity atoms in a semiconductor, the conductivity behavior is primarily determined by the dopant concentration, the charge carriers introduced, and their mobility within the crystal lattice. Ohmic Conductivity is denoted by σ symbol.

How to calculate Ohmic Conductivity of Impurity using this online calculator? To use this online calculator for Ohmic Conductivity of Impurity, enter Charge (q), Electron Doping Silicon Mobility (μ_n), Electron Concentration (n_e), Hole Doping Silicon Mobility (μ_p) & Hole Concentration (p) and hit the calculate button. Here is how the Ohmic Conductivity of Impurity calculation can be explained with given input values -> 0.00086 = 0.005*(3.8E-05*50600000+0.00024*690000).

FAQ

What is Ohmic Conductivity of Impurity?

The Ohmic Conductivity of Impurity specifically refers to a linear relationship between the current passing through a material and the applied voltage. In the context of impurity atoms in a semiconductor, the conductivity behavior is primarily determined by the dopant concentration, the charge carriers introduced, and their mobility within the crystal lattice and is represented as σ = q*(μ_n*n_e+μ_p*p) or Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration). Charge a characteristic of a unit of matter that expresses the extent to which it has more or fewer electrons than protons, Electron Doping Silicon Mobility characterizes how quickly an electron can move through a metal or semiconductor when pulled by an electric field, Electron Concentration is influenced by various factors such as temperature, impurities or dopants added to the semiconductor material, and external electric or magnetic fields, Hole Doping Silicon Mobility is the ability of a hole to travel across a metal or semiconductor in the presence of an applied electric field & Hole Concentration imply a greater number of available charge carriers in the material, affecting its conductivity and various semiconductor device.

How to calculate Ohmic Conductivity of Impurity?

The Ohmic Conductivity of Impurity specifically refers to a linear relationship between the current passing through a material and the applied voltage. In the context of impurity atoms in a semiconductor, the conductivity behavior is primarily determined by the dopant concentration, the charge carriers introduced, and their mobility within the crystal lattice is calculated using Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration). To calculate Ohmic Conductivity of Impurity, you need Charge (q), Electron Doping Silicon Mobility (μ_n), Electron Concentration (n_e), Hole Doping Silicon Mobility (μ_p) & Hole Concentration (p). With our tool, you need to enter the respective value for Charge, Electron Doping Silicon Mobility, Electron Concentration, Hole Doping Silicon Mobility & Hole Concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Ohmic Conductivity?

In this formula, Ohmic Conductivity uses Charge, Electron Doping Silicon Mobility, Electron Concentration, Hole Doping Silicon Mobility & Hole Concentration. We can use 2 other way(s) to calculate the same, which is/are as follows -

Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))
Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type)

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