Breakout Voltage of Collector Emitter Calculator

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✖Collector Base Breakout Voltage is the maximum voltage between the collector and base terminals of a bipolar junction transistor without causing a breakdown in the transistor.ⓘ Collector Base Breakout Voltage [V_cb]			+10% -10%
✖Current Gain of BJT is used to describe the amplification properties of the transistor. It indicates how much the collector current is amplified with respect to the base current.ⓘ Current Gain of BJT [i_g]			+10% -10%
✖Root Number is represent a constant or a factor associated with the transistor.ⓘ Root Number [n]			+10% -10%

✖Collector Emitter Breakout Voltage is voltage between the collector and emitter terminals of a bipolar junction transistor without causing a breakdown in the transistor.ⓘ Breakout Voltage of Collector Emitter [V_ce]

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Formula

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Breakout Voltage of Collector Emitter

Formula

`"V"_{"ce"} = "V"_{"cb"}/("i"_{"g"})^(1/"n")`

Example

`"2.103602V"="3.52V"/("2.8V")^(1/"2")`

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Breakout Voltage of Collector Emitter Solution

STEP 0: Pre-Calculation Summary

Formula Used

Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number)
V_ce = V_cb/(i_g)^(1/n)
This formula uses 4 Variables

Variables Used

Collector Emitter Breakout Voltage - (Measured in Volt) - Collector Emitter Breakout Voltage is voltage between the collector and emitter terminals of a bipolar junction transistor without causing a breakdown in the transistor.
Collector Base Breakout Voltage - (Measured in Volt) - Collector Base Breakout Voltage is the maximum voltage between the collector and base terminals of a bipolar junction transistor without causing a breakdown in the transistor.
Current Gain of BJT - (Measured in Volt) - Current Gain of BJT is used to describe the amplification properties of the transistor. It indicates how much the collector current is amplified with respect to the base current.
Root Number - Root Number is represent a constant or a factor associated with the transistor.

STEP 1: Convert Input(s) to Base Unit

Collector Base Breakout Voltage: 3.52 Volt --> 3.52 Volt No Conversion Required
Current Gain of BJT: 2.8 Volt --> 2.8 Volt No Conversion Required
Root Number: 2 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

V_ce = V_cb/(i_g)^(1/n) --> 3.52/(2.8)^(1/2)

Evaluating ... ...

V_ce = 2.10360235242853

STEP 3: Convert Result to Output's Unit

2.10360235242853 Volt --> No Conversion Required

FINAL ANSWER

2.10360235242853 ≈ 2.103602 Volt <-- Collector Emitter Breakout Voltage

(Calculation completed in 00.004 seconds)

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Created by Rahul Gupta

Chandigarh University (CU), Mohali, Punjab

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Chandigarh University (CU), Punjab

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< 19 Bipolar IC Fabrication Calculators

Resistance of Rectangular Parallelepiped

Go Resistance = ((Resistivity*Thickness of Layer)/(Width of Diffused Layer*Length of Diffused Layer))*(ln(Width of Bottom Rectangle/Length of Bottom Rectangle)/(Width of Bottom Rectangle-Length of Bottom Rectangle))

Impurity Atoms Per Unit Area

Go Total Impurity = Effective Diffusion*(Emitter Base Junction Area*((Charge*Intrinsic Concentration^2)/Collector Current)*exp(Voltage Base Emitter/Thermal Voltage))

Conductivity of N-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))

Conductivity of P-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type)

Ohmic Conductivity of Impurity

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)

Gate Source Capacitance Given Overlap Capacitance

Go Gate Source Capacitance = (2/3*Transistor's Width*Transistor's Length*Oxide Capacitance)+(Transistor's Width*Overlap Capacitance)

Collector-Current of PNP Transistor

Go Collector Current = (Charge*Emitter Base Junction Area*Equilibrium Concentration of N-Type*Diffusion Constant For PNP)/Base Width

Saturation Current in Transistor

Go Saturation Current = (Charge*Emitter Base Junction Area*Effective Diffusion*Intrinsic Concentration^2)/Total Impurity

Capacitive Load Power Consumption given Supply Voltage

Go Capacitive Load Power Consumption = Load Capacitance*Supply Voltage^2*Output Signal Frequency*Total Number of Outputs Switching

Sheet Resistance of Layer

Go Sheet Resistance = 1/(Charge*Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type*Thickness of Layer)

Resistance of Diffused Layer

Go Resistance = (1/Ohmic Conductivity)*(Length of Diffused Layer/(Width of Diffused Layer*Thickness of Layer))

Current Density Hole

Go Hole Current Density = Charge*Diffusion Constant For PNP*(Hole Equilibrium Concentration/Base Width)

Impurity with Intrinsic Concentration

Go Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity)

Emitter Injection Efficiency

Go Emmitter Injection Efficiency = Emitter Current/(Emitter Current due to Electrons+Emitter Current due to Holes)

Breakout Voltage of Collector Emitter

Go Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number)

Emitter Injection Efficiency given Doping Constants

Go Emmitter Injection Efficiency = Doping on N-side/(Doping on N-side+Doping on P-side)

Current Flowing in Zener Diode

Go Diode Current = (Input Reference Voltage-Stable Output Voltage)/Zener Resistance

Voltage to Frequency Conversion Factor in ICs

Go Voltage to Frequency Conversion Factor in ICs = Output Signal Frequency/Input Voltage

Base Transport Factor given Base Width

Go Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2)

Breakout Voltage of Collector Emitter Formula

Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number)
V_ce = V_cb/(i_g)^(1/n)

Why is Breakout voltage of CE important?

Exceeding the BVCEO rating can lead to a breakdown in the transistor, causing it to conduct excessively and potentially leading to permanent damage. Therefore, when designing circuits using transistors, it's crucial to ensure that the voltage between the collector and emitter terminals stays below the specified BVCEO value.

How to Calculate Breakout Voltage of Collector Emitter?

Breakout Voltage of Collector Emitter calculator uses Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number) to calculate the Collector Emitter Breakout Voltage, Breakout Voltage of Collector Emitter is a critical parameter in bipolar junction transistors (BJTs). It represents the maximum voltage that can be applied between the collector and emitter terminals of the transistor without causing a breakdown or avalanche effect. It's an important specification to ensure the proper and safe operation of the transistor. Collector Emitter Breakout Voltage is denoted by V_ce symbol.

How to calculate Breakout Voltage of Collector Emitter using this online calculator? To use this online calculator for Breakout Voltage of Collector Emitter, enter Collector Base Breakout Voltage (V_cb), Current Gain of BJT (i_g) & Root Number (n) and hit the calculate button. Here is how the Breakout Voltage of Collector Emitter calculation can be explained with given input values -> 2.103602 = 3.52/(2.8)^(1/2).

FAQ

What is Breakout Voltage of Collector Emitter?

Breakout Voltage of Collector Emitter is a critical parameter in bipolar junction transistors (BJTs). It represents the maximum voltage that can be applied between the collector and emitter terminals of the transistor without causing a breakdown or avalanche effect. It's an important specification to ensure the proper and safe operation of the transistor and is represented as V_ce = V_cb/(i_g)^(1/n) or Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number). Collector Base Breakout Voltage is the maximum voltage between the collector and base terminals of a bipolar junction transistor without causing a breakdown in the transistor, Current Gain of BJT is used to describe the amplification properties of the transistor. It indicates how much the collector current is amplified with respect to the base current & Root Number is represent a constant or a factor associated with the transistor.

How to calculate Breakout Voltage of Collector Emitter?

Breakout Voltage of Collector Emitter is a critical parameter in bipolar junction transistors (BJTs). It represents the maximum voltage that can be applied between the collector and emitter terminals of the transistor without causing a breakdown or avalanche effect. It's an important specification to ensure the proper and safe operation of the transistor is calculated using Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number). To calculate Breakout Voltage of Collector Emitter, you need Collector Base Breakout Voltage (V_cb), Current Gain of BJT (i_g) & Root Number (n). With our tool, you need to enter the respective value for Collector Base Breakout Voltage, Current Gain of BJT & Root Number and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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Breakout Voltage of Collector Emitter Calculator

Breakout Voltage of Collector Emitter

Breakout Voltage of Collector Emitter Solution

Credits

< 19 Bipolar IC Fabrication Calculators

Breakout Voltage of Collector Emitter Formula

Why is Breakout voltage of CE ​important?

How to Calculate Breakout Voltage of Collector Emitter?

FAQ

Why is Breakout voltage of CE important?