Impurity with Intrinsic Concentration Calculator

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✖Electron Concentration is influenced by various factors such as temperature, impurities or dopants added to the semiconductor material, and external electric or magnetic fields.ⓘ Electron Concentration [n_e]			+10% -10%
✖Hole Concentration imply a greater number of available charge carriers in the material, affecting its conductivity and various semiconductor device.ⓘ Hole Concentration [p]			+10% -10%
✖Temperature Impurity a base index representing the average air temperature over different timescales.ⓘ Temperature Impurity [t_o]			+10% -10%

✖Intrinsic Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.ⓘ Impurity with Intrinsic Concentration [n_i]

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Impurity with Intrinsic Concentration

Formula

`"n"_{"i"} = sqrt(("n"_{"e"}*"p")/"t"_{"o"})`

Example

`"1.321249/cm³"=sqrt(("50.6/cm³"*"0.69/cm³")/"20K")`

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Impurity with Intrinsic Concentration Solution

STEP 0: Pre-Calculation Summary

Formula Used

Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity)
n_i = sqrt((n_e*p)/t_o)
This formula uses 1 Functions, 4 Variables

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)

Variables Used

Intrinsic Concentration - (Measured in 1 per Cubic Meter) - Intrinsic Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.
Electron Concentration - (Measured in 1 per Cubic Meter) - Electron Concentration is influenced by various factors such as temperature, impurities or dopants added to the semiconductor material, and external electric or magnetic fields.
Hole Concentration - (Measured in 1 per Cubic Meter) - Hole Concentration imply a greater number of available charge carriers in the material, affecting its conductivity and various semiconductor device.
Temperature Impurity - (Measured in Kelvin) - Temperature Impurity a base index representing the average air temperature over different timescales.

STEP 1: Convert Input(s) to Base Unit

Electron Concentration: 50.6 1 per Cubic Centimeter --> 50600000 1 per Cubic Meter (Check conversion here)
Hole Concentration: 0.69 1 per Cubic Centimeter --> 690000 1 per Cubic Meter (Check conversion here)
Temperature Impurity: 20 Kelvin --> 20 Kelvin No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

n_i = sqrt((n_e*p)/t_o) --> sqrt((50600000*690000)/20)

Evaluating ... ...

n_i = 1321249.40870375

STEP 3: Convert Result to Output's Unit

1321249.40870375 1 per Cubic Meter -->1.32124940870375 1 per Cubic Centimeter (Check conversion here)

FINAL ANSWER

1.32124940870375 ≈ 1.321249 1 per Cubic Centimeter <-- Intrinsic Concentration

(Calculation completed in 00.004 seconds)

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Created by Rahul Gupta

Chandigarh University (CU), Mohali, Punjab

Rahul Gupta has created this Calculator and 25+ more calculators!

Verified by Parminder Singh

Chandigarh University (CU), Punjab

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< 19 Bipolar IC Fabrication Calculators

Resistance of Rectangular Parallelepiped

Go Resistance = ((Resistivity*Thickness of Layer)/(Width of Diffused Layer*Length of Diffused Layer))*(ln(Width of Bottom Rectangle/Length of Bottom Rectangle)/(Width of Bottom Rectangle-Length of Bottom Rectangle))

Impurity Atoms Per Unit Area

Go Total Impurity = Effective Diffusion*(Emitter Base Junction Area*((Charge*Intrinsic Concentration^2)/Collector Current)*exp(Voltage Base Emitter/Thermal Voltage))

Conductivity of N-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type+Hole Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of N-Type))

Conductivity of P-Type

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*(Intrinsic Concentration^2/Equilibrium Concentration of P-Type)+Hole Doping Silicon Mobility*Equilibrium Concentration of P-Type)

Ohmic Conductivity of Impurity

Go Ohmic Conductivity = Charge*(Electron Doping Silicon Mobility*Electron Concentration+Hole Doping Silicon Mobility*Hole Concentration)

Gate Source Capacitance Given Overlap Capacitance

Go Gate Source Capacitance = (2/3*Transistor's Width*Transistor's Length*Oxide Capacitance)+(Transistor's Width*Overlap Capacitance)

Collector-Current of PNP Transistor

Go Collector Current = (Charge*Emitter Base Junction Area*Equilibrium Concentration of N-Type*Diffusion Constant For PNP)/Base Width

Saturation Current in Transistor

Go Saturation Current = (Charge*Emitter Base Junction Area*Effective Diffusion*Intrinsic Concentration^2)/Total Impurity

Capacitive Load Power Consumption given Supply Voltage

Go Capacitive Load Power Consumption = Load Capacitance*Supply Voltage^2*Output Signal Frequency*Total Number of Outputs Switching

Sheet Resistance of Layer

Go Sheet Resistance = 1/(Charge*Electron Doping Silicon Mobility*Equilibrium Concentration of N-Type*Thickness of Layer)

Resistance of Diffused Layer

Go Resistance = (1/Ohmic Conductivity)*(Length of Diffused Layer/(Width of Diffused Layer*Thickness of Layer))

Current Density Hole

Go Hole Current Density = Charge*Diffusion Constant For PNP*(Hole Equilibrium Concentration/Base Width)

Impurity with Intrinsic Concentration

Go Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity)

Emitter Injection Efficiency

Go Emmitter Injection Efficiency = Emitter Current/(Emitter Current due to Electrons+Emitter Current due to Holes)

Breakout Voltage of Collector Emitter

Go Collector Emitter Breakout Voltage = Collector Base Breakout Voltage/(Current Gain of BJT)^(1/Root Number)

Emitter Injection Efficiency given Doping Constants

Go Emmitter Injection Efficiency = Doping on N-side/(Doping on N-side+Doping on P-side)

Current Flowing in Zener Diode

Go Diode Current = (Input Reference Voltage-Stable Output Voltage)/Zener Resistance

Voltage to Frequency Conversion Factor in ICs

Go Voltage to Frequency Conversion Factor in ICs = Output Signal Frequency/Input Voltage

Base Transport Factor given Base Width

Go Base Transport Factor = 1-(1/2*(Physical Width/Electron Diffusion Length)^2)

Impurity with Intrinsic Concentration Formula

Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity)
n_i = sqrt((n_e*p)/t_o)

Why are impurities added in intrinsic semiconductors?

Impurities are added into a semiconductor to actually increase the electric conductivity. The process of adding an impurity into the semiconductor to increase its ability to conduct electricity is known as doping and the impure semiconductor is known as a doped semiconductor.

How to Calculate Impurity with Intrinsic Concentration?

Impurity with Intrinsic Concentration calculator uses Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity) to calculate the Intrinsic Concentration, The Impurity With Intrinsic Concentration formula is defined as some impurity (either trivalent or pentavalent) is added to intrinsic semiconductor it will increase the concentration or density of charge carriers (either holes or electrons) and which in turn increase its conductivity. Intrinsic Concentration is denoted by n_i symbol.

How to calculate Impurity with Intrinsic Concentration using this online calculator? To use this online calculator for Impurity with Intrinsic Concentration, enter Electron Concentration (n_e), Hole Concentration (p) & Temperature Impurity (t_o) and hit the calculate button. Here is how the Impurity with Intrinsic Concentration calculation can be explained with given input values -> 1.2E-6 = sqrt((50600000*690000)/20).

FAQ

What is Impurity with Intrinsic Concentration?

The Impurity With Intrinsic Concentration formula is defined as some impurity (either trivalent or pentavalent) is added to intrinsic semiconductor it will increase the concentration or density of charge carriers (either holes or electrons) and which in turn increase its conductivity and is represented as n_i = sqrt((n_e*p)/t_o) or Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity). Electron Concentration is influenced by various factors such as temperature, impurities or dopants added to the semiconductor material, and external electric or magnetic fields, Hole Concentration imply a greater number of available charge carriers in the material, affecting its conductivity and various semiconductor device & Temperature Impurity a base index representing the average air temperature over different timescales.

How to calculate Impurity with Intrinsic Concentration?

The Impurity With Intrinsic Concentration formula is defined as some impurity (either trivalent or pentavalent) is added to intrinsic semiconductor it will increase the concentration or density of charge carriers (either holes or electrons) and which in turn increase its conductivity is calculated using Intrinsic Concentration = sqrt((Electron Concentration*Hole Concentration)/Temperature Impurity). To calculate Impurity with Intrinsic Concentration, you need Electron Concentration (n_e), Hole Concentration (p) & Temperature Impurity (t_o). With our tool, you need to enter the respective value for Electron Concentration, Hole Concentration & Temperature Impurity and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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