Depletion Region Width Solution

STEP 0: Pre-Calculation Summary
Formula Used
Depletion Region Width = PN Junction Length-Effective Channel Length
Ld = Lpn-Leff
This formula uses 3 Variables
Variables Used
Depletion Region Width - (Measured in Meter) - Depletion Region Width in a typical Si diode ranges from a fraction of a micrometer to tens of micrometers depending on device geometry, doping profile, and external bias.
PN Junction Length - (Measured in Meter) - PN Junction Length is defined as the total length of the junction from p-side to n-side in a semiconductor.
Effective Channel Length - (Measured in Meter) - Effective Channel Length is defined as the path that links the charge carriers between the drain and the source.
STEP 1: Convert Input(s) to Base Unit
PN Junction Length: 19 Millimeter --> 0.019 Meter (Check conversion ​here)
Effective Channel Length: 8 Millimeter --> 0.008 Meter (Check conversion ​here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Ld = Lpn-Leff --> 0.019-0.008
Evaluating ... ...
Ld = 0.011
STEP 3: Convert Result to Output's Unit
0.011 Meter -->11 Millimeter (Check conversion ​here)
FINAL ANSWER
11 Millimeter <-- Depletion Region Width
(Calculation completed in 00.004 seconds)

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15 CMOS Circuit Characteristics Calculators

Effective Capacitance in CMOS
​ Go Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage)
Permittivity of Oxide Layer
​ Go Permittivity of Oxide Layer = Oxide Layer Thickness*Input Gate Capacitance/(Gate Width*Length of Gate)
Oxide Layer Thickness
​ Go Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance
Width of Gate
​ Go Gate Width = Input Gate Capacitance/(Capacitance of Gate Oxide Layer*Length of Gate)
Sidewall Perimeter of Source Diffusion
​ Go Sidewall Perimeter of Source Diffusion = (2*Transition Width)+(2*Length of Source)
Critical Electric Field
​ Go Critical Electric Field = (2*Velocity Saturation)/Mobility of Electron
Transition Width of CMOS
​ Go Transition Width = MOS Gate Overlap Capacitance/MOS Gate Capacitance
Effective Channel Length
​ Go Effective Channel Length = PN Junction Length-Depletion Region Width
Depletion Region Width
​ Go Depletion Region Width = PN Junction Length-Effective Channel Length
PN Junction Length
​ Go PN Junction Length = Depletion Region Width+Effective Channel Length
Voltage at Minimum EDP
​ Go Voltage at Minimum EDP = (3*Threshold Voltage)/(3-Activity Factor)
CMOS Critical Voltage
​ Go Critical Voltage in CMOS = Critical Electric Field*Mean Free Path
CMOS Mean Free Path
​ Go Mean Free Path = Critical Voltage in CMOS/Critical Electric Field
Width of Source Diffusion
​ Go Transition Width = Area of Source Diffusion/Length of Source
Area of Source Diffusion
​ Go Area of Source Diffusion = Length of Source*Transition Width

Depletion Region Width Formula

Depletion Region Width = PN Junction Length-Effective Channel Length
Ld = Lpn-Leff

What is the importance of channel length modulation?

Channel length modulation (CLM) is a technique used in digital communication systems to adjust the length of a communication channel to suit the bit rate of the signal being transmitted. CLM can help improve the signal-to-noise ratio and increase the data transmission rate, making it a crucial aspect of digital communication.

How to Calculate Depletion Region Width?

Depletion Region Width calculator uses Depletion Region Width = PN Junction Length-Effective Channel Length to calculate the Depletion Region Width, The Depletion region Width formula is defined as the physical width of the depletion region in a typical Si diode ranges from a fraction of a micrometer to tens of micrometers depending on device geometry, doping profile, and external bias. Depletion Region Width is denoted by Ld symbol.

How to calculate Depletion Region Width using this online calculator? To use this online calculator for Depletion Region Width, enter PN Junction Length (Lpn) & Effective Channel Length (Leff) and hit the calculate button. Here is how the Depletion Region Width calculation can be explained with given input values -> 1.1E+7 = 1.9E-05-8E-06.

FAQ

What is Depletion Region Width?
The Depletion region Width formula is defined as the physical width of the depletion region in a typical Si diode ranges from a fraction of a micrometer to tens of micrometers depending on device geometry, doping profile, and external bias and is represented as Ld = Lpn-Leff or Depletion Region Width = PN Junction Length-Effective Channel Length. PN Junction Length is defined as the total length of the junction from p-side to n-side in a semiconductor & Effective Channel Length is defined as the path that links the charge carriers between the drain and the source.
How to calculate Depletion Region Width?
The Depletion region Width formula is defined as the physical width of the depletion region in a typical Si diode ranges from a fraction of a micrometer to tens of micrometers depending on device geometry, doping profile, and external bias is calculated using Depletion Region Width = PN Junction Length-Effective Channel Length. To calculate Depletion Region Width, you need PN Junction Length (Lpn) & Effective Channel Length (Leff). With our tool, you need to enter the respective value for PN Junction Length & Effective Channel Length and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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