Width of Source Diffusion Solution

STEP 0: Pre-Calculation Summary
Formula Used
Transition Width = Area of Source Diffusion/Length of Source
W = As/Ds
This formula uses 3 Variables
Variables Used
Transition Width - (Measured in Meter) - Transition Width is defined as the increase in width when drain-to-source voltage increases, resulting the triode region transitioning to the saturation region.
Area of Source Diffusion - (Measured in Square Meter) - Area of Source Diffusion is defined as net movement of anything from a region of higher concentration to a region of lower concentration area in the source gate.
Length of Source - (Measured in Meter) - Length of Source is defined as the total length observed at the source junction of the MOSFET.
STEP 1: Convert Input(s) to Base Unit
Area of Source Diffusion: 5479 Square Millimeter --> 0.005479 Square Meter (Check conversion here)
Length of Source: 61 Millimeter --> 0.061 Meter (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
W = As/Ds --> 0.005479/0.061
Evaluating ... ...
W = 0.0898196721311476
STEP 3: Convert Result to Output's Unit
0.0898196721311476 Meter -->89.8196721311476 Millimeter (Check conversion here)
FINAL ANSWER
89.8196721311476 89.81967 Millimeter <-- Transition Width
(Calculation completed in 00.004 seconds)

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Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
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15 CMOS Circuit Characteristics Calculators

Effective Capacitance in CMOS
Go Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage)
Permittivity of Oxide Layer
Go Permittivity of Oxide Layer = Oxide Layer Thickness*Input Gate Capacitance/(Gate Width*Length of Gate)
Oxide Layer Thickness
Go Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance
Width of Gate
Go Gate Width = Input Gate Capacitance/(Capacitance of Gate Oxide Layer*Length of Gate)
Sidewall Perimeter of Source Diffusion
Go Sidewall Perimeter of Source Diffusion = (2*Transition Width)+(2*Length of Source)
Critical Electric Field
Go Critical Electric Field = (2*Velocity Saturation)/Mobility of Electron
Transition Width of CMOS
Go Transition Width = MOS Gate Overlap Capacitance/MOS Gate Capacitance
Effective Channel Length
Go Effective Channel Length = PN Junction Length-Depletion Region Width
Depletion Region Width
Go Depletion Region Width = PN Junction Length-Effective Channel Length
PN Junction Length
Go PN Junction Length = Depletion Region Width+Effective Channel Length
CMOS Mean Free Path
Go Mean Free Path = Critical Voltage in CMOS/Critical Electric Field
Voltage at Minimum EDP
Go Voltage at Minimum EDP = (3*Threshold Voltage)/(3-Activity Factor)
CMOS Critical Voltage
Go Critical Voltage in CMOS = Critical Electric Field*Mean Free Path
Width of Source Diffusion
Go Transition Width = Area of Source Diffusion/Length of Source
Area of Source Diffusion
Go Area of Source Diffusion = Length of Source*Transition Width

Width of Source Diffusion Formula

Transition Width = Area of Source Diffusion/Length of Source
W = As/Ds

What are the applications of Source Diffusion?

Source diffusion is a critical process in CMOS technology, with numerous applications. It is used to reduce the dimensions of transistors, improve the performance of conseguive circuits, and increase the overall speed of the chips. Moreover, source diffusion facilitates the integration of multiple transistors on a single chip, enabling the fabrication of complex and high-density integrated circuits.

How to Calculate Width of Source Diffusion?

Width of Source Diffusion calculator uses Transition Width = Area of Source Diffusion/Length of Source to calculate the Transition Width, The Width of Source Diffusion(W) formula is defined as the total width of the source diffusion. It is more commonly known as transition width. Transition Width is denoted by W symbol.

How to calculate Width of Source Diffusion using this online calculator? To use this online calculator for Width of Source Diffusion, enter Area of Source Diffusion (As) & Length of Source (Ds) and hit the calculate button. Here is how the Width of Source Diffusion calculation can be explained with given input values -> 898.1967 = 0.005479/0.061 .

FAQ

What is Width of Source Diffusion?
The Width of Source Diffusion(W) formula is defined as the total width of the source diffusion. It is more commonly known as transition width and is represented as W = As/Ds or Transition Width = Area of Source Diffusion/Length of Source. Area of Source Diffusion is defined as net movement of anything from a region of higher concentration to a region of lower concentration area in the source gate & Length of Source is defined as the total length observed at the source junction of the MOSFET.
How to calculate Width of Source Diffusion?
The Width of Source Diffusion(W) formula is defined as the total width of the source diffusion. It is more commonly known as transition width is calculated using Transition Width = Area of Source Diffusion/Length of Source. To calculate Width of Source Diffusion, you need Area of Source Diffusion (As) & Length of Source (Ds). With our tool, you need to enter the respective value for Area of Source Diffusion & Length of Source and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Transition Width?
In this formula, Transition Width uses Area of Source Diffusion & Length of Source. We can use 1 other way(s) to calculate the same, which is/are as follows -
  • Transition Width = MOS Gate Overlap Capacitance/MOS Gate Capacitance
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