CMOS Critical Voltage Solution

STEP 0: Pre-Calculation Summary
Formula Used
Critical Voltage in CMOS = Critical Electric Field*Mean Free Path
Vc = Ec*L
This formula uses 3 Variables
Variables Used
Critical Voltage in CMOS - (Measured in Volt) - Critical Voltage in CMOS is the minimum phase to the neutral voltage which glows and appears all along the line conductor.
Critical Electric Field - (Measured in Volt per Meter) - Critical Electric Field is defined as the electric force per unit charge.
Mean Free Path - (Measured in Meter) - Mean Free Path is defined as the average distance travelled by a moving particle between successive impacts, which modifies its direction or energy or other particle properties.
STEP 1: Convert Input(s) to Base Unit
Critical Electric Field: 0.004 Volt per Millimeter --> 4 Volt per Meter (Check conversion here)
Mean Free Path: 697.57 Millimeter --> 0.69757 Meter (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Vc = Ec*L --> 4*0.69757
Evaluating ... ...
Vc = 2.79028
STEP 3: Convert Result to Output's Unit
2.79028 Volt --> No Conversion Required
FINAL ANSWER
2.79028 Volt <-- Critical Voltage in CMOS
(Calculation completed in 00.004 seconds)

Credits

Created by Shobhit Dimri
Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
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Vishwakarma Government Engineering College (VGEC), Ahmedabad
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15 CMOS Circuit Characteristics Calculators

Effective Capacitance in CMOS
Go Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage)
Permittivity of Oxide Layer
Go Permittivity of Oxide Layer = Oxide Layer Thickness*Input Gate Capacitance/(Gate Width*Length of Gate)
Oxide Layer Thickness
Go Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance
Width of Gate
Go Gate Width = Input Gate Capacitance/(Capacitance of Gate Oxide Layer*Length of Gate)
Sidewall Perimeter of Source Diffusion
Go Sidewall Perimeter of Source Diffusion = (2*Transition Width)+(2*Length of Source)
Critical Electric Field
Go Critical Electric Field = (2*Velocity Saturation)/Mobility of Electron
Transition Width of CMOS
Go Transition Width = MOS Gate Overlap Capacitance/MOS Gate Capacitance
Effective Channel Length
Go Effective Channel Length = PN Junction Length-Depletion Region Width
Depletion Region Width
Go Depletion Region Width = PN Junction Length-Effective Channel Length
PN Junction Length
Go PN Junction Length = Depletion Region Width+Effective Channel Length
Voltage at Minimum EDP
Go Voltage at Minimum EDP = (3*Threshold Voltage)/(3-Activity Factor)
CMOS Critical Voltage
Go Critical Voltage in CMOS = Critical Electric Field*Mean Free Path
CMOS Mean Free Path
Go Mean Free Path = Critical Voltage in CMOS/Critical Electric Field
Width of Source Diffusion
Go Transition Width = Area of Source Diffusion/Length of Source
Area of Source Diffusion
Go Area of Source Diffusion = Length of Source*Transition Width

CMOS Critical Voltage Formula

Critical Voltage in CMOS = Critical Electric Field*Mean Free Path
Vc = Ec*L

What is mobility degradation?

A high voltage at the gate of the transistor attracts the carriers to the edge of the channel, causing collisions with the oxide interface that slow the carriers. This is called mobility degradation.

What is velocity saturation?

Carriers approach a maximum velocity vsat when high fields are applied. This phenomenon is called velocity saturation.

How to Calculate CMOS Critical Voltage?

CMOS Critical Voltage calculator uses Critical Voltage in CMOS = Critical Electric Field*Mean Free Path to calculate the Critical Voltage in CMOS, The CMOS critical Voltage formula is defined as the voltage between the collector and emitter terminals under conditions of base current or base-emitter voltage beyond which the collector current remains essentially constant as the base current or voltage is increased. Critical Voltage in CMOS is denoted by Vc symbol.

How to calculate CMOS Critical Voltage using this online calculator? To use this online calculator for CMOS Critical Voltage, enter Critical Electric Field (Ec) & Mean Free Path (L) and hit the calculate button. Here is how the CMOS Critical Voltage calculation can be explained with given input values -> 2.79828 = 4*0.69757.

FAQ

What is CMOS Critical Voltage?
The CMOS critical Voltage formula is defined as the voltage between the collector and emitter terminals under conditions of base current or base-emitter voltage beyond which the collector current remains essentially constant as the base current or voltage is increased and is represented as Vc = Ec*L or Critical Voltage in CMOS = Critical Electric Field*Mean Free Path. Critical Electric Field is defined as the electric force per unit charge & Mean Free Path is defined as the average distance travelled by a moving particle between successive impacts, which modifies its direction or energy or other particle properties.
How to calculate CMOS Critical Voltage?
The CMOS critical Voltage formula is defined as the voltage between the collector and emitter terminals under conditions of base current or base-emitter voltage beyond which the collector current remains essentially constant as the base current or voltage is increased is calculated using Critical Voltage in CMOS = Critical Electric Field*Mean Free Path. To calculate CMOS Critical Voltage, you need Critical Electric Field (Ec) & Mean Free Path (L). With our tool, you need to enter the respective value for Critical Electric Field & Mean Free Path and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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