Depth of Depletion Region Associated with Source Calculator

✖Built in Junction Potential refers to the potential difference or voltage that exists across a semiconductor junction when it is not connected to an external voltage source.ⓘ Built in Junction Potential [Φ_o]			+10% -10%
✖Doping Concentration of Acceptor refers to the concentration of acceptor atoms intentionally added to a semiconductor material.ⓘ Doping Concentration of Acceptor [N_A]			+10% -10%

✖Source's Depth of Depletion Region is the depletion region forms near the source terminal when a voltage is applied to the gate terminal.ⓘ Depth of Depletion Region Associated with Source [x_dS]

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Formula

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Depth of Depletion Region Associated with Source

Formula

`"x"_{"dS"} = sqrt((2*"[Permitivity-silicon]"*"Φ"_{"o"})/("[Charge-e]"*"N"_{"A"}))`

Example

`"1.5E^7m"=sqrt((2*"[Permitivity-silicon]"*"2V")/("[Charge-e]"*"1.32electrons/cm³"))`

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Depth of Depletion Region Associated with Source Solution

STEP 0: Pre-Calculation Summary

Formula Used

Source's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*Built in Junction Potential)/([Charge-e]*Doping Concentration of Acceptor))
x_dS = sqrt((2*[Permitivity-silicon]*Φ_o)/([Charge-e]*N_A))
This formula uses 2 Constants, 1 Functions, 3 Variables

Constants Used

[Permitivity-silicon] - Permittivity of silicon Value Taken As 11.7
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)

Variables Used

Source's Depth of Depletion Region - (Measured in Meter) - Source's Depth of Depletion Region is the depletion region forms near the source terminal when a voltage is applied to the gate terminal.
Built in Junction Potential - (Measured in Volt) - Built in Junction Potential refers to the potential difference or voltage that exists across a semiconductor junction when it is not connected to an external voltage source.
Doping Concentration of Acceptor - (Measured in Electrons per Cubic Meter) - Doping Concentration of Acceptor refers to the concentration of acceptor atoms intentionally added to a semiconductor material.

STEP 1: Convert Input(s) to Base Unit

Built in Junction Potential: 2 Volt --> 2 Volt No Conversion Required
Doping Concentration of Acceptor: 1.32 Electrons per Cubic Centimeter --> 1320000 Electrons per Cubic Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

x_dS = sqrt((2*[Permitivity-silicon]*Φ_o)/([Charge-e]*N_A)) --> sqrt((2*[Permitivity-silicon]*2)/([Charge-e]*1320000))

Evaluating ... ...

x_dS = 14875814.9060508

STEP 3: Convert Result to Output's Unit

14875814.9060508 Meter --> No Conversion Required

FINAL ANSWER

14875814.9060508 ≈ 1.5E+7 Meter <-- Source's Depth of Depletion Region

(Calculation completed in 00.007 seconds)

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< 21 MOS Transistor Calculators

Sidewall Voltage Equivalence Factor

Go Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage)))

Pull down Current in Linear Region

Go Linear Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(2*(Gate Source Voltage-Threshold Voltage)*Output Voltage-Output Voltage^2))

Node Voltage at Given Instance

Go Node Voltage at Given Instance = (Transconductance Factor/Node Capacitance)*int(exp(-(1/(Node Resistance*Node Capacitance))*(Time Period-x))*Current Flowing into Node*x,x,0,Time Period)

Pull down Current in Saturation Region

Go Saturation Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(Gate Source Voltage-Threshold Voltage)^2)

Saturation Time

Go Saturation Time = -2*Load Capacitance/(Transconductance Process Parameter*(High Output Voltage-Threshold Voltage)^2)*int(1,x,High Output Voltage,High Output Voltage-Threshold Voltage)

Drain Current Flowing through MOS Transistor

Go Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage)

Time Delay when NMOS Operates in Linear Region

Go Linear Region in Time Delay = -2*Junction Capacitance*int(1/(Transconductance Process Parameter*(2*(Input Voltage-Threshold Voltage)*x-x^2)),x,Initial Voltage,Final Voltage)

Depletion Region Charge Density

Go Density of Depletion Layer Charge = (sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(Surface Potential-Bulk Fermi Potential)))

Depth of Depletion Region Associated with Drain

Go Drain's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*(Built in Junction Potential+Drain Source Voltage))/([Charge-e]*Doping Concentration of Acceptor))

Drain Current in Saturation Region in MOS Transistor

Go Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length)

Fermi Potential for P Type

Go Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)

Maximum Depletion Depth

Go Maximum Depletion Depth = sqrt((2*[Permitivity-silicon]*modulus(2*Bulk Fermi Potential))/([Charge-e]*Doping Concentration of Acceptor))

Fermi Potential for N Type

Go Fermi Potential for N Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Donor Dopant Concentration/Intrinsic Carrier Concentration)

Equivalent Large Signal Capacitance

Go Equivalent Large Signal Capacitance = (1/(Final Voltage-Initial Voltage))*int(Junction Capacitance*x,x,Initial Voltage,Final Voltage)

Built in Potential at Depletion Region

Go Built in Voltage = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(-2*Bulk Fermi Potential)))

Depth of Depletion Region Associated with Source

Go Source's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*Built in Junction Potential)/([Charge-e]*Doping Concentration of Acceptor))

Substrate Bias Coefficient

Go Substrate Bias Coefficient = sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor)/Oxide Capacitance

Average Power Dissipated over Period of Time

Go Average Power = (1/Total Time Taken)*int(Voltage*Current,x,0,Total Time Taken)

Equivalent Large Signal Junction Capacitance

Go Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor

Work Function in MOSFET

Go Work Function = Vaccum Level+(Conduction Band Energy Level-Fermi Level)

Zero Bias Sidewall Junction Capacitance per Unit Length

Go Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall

Depth of Depletion Region Associated with Source Formula

What happens to the depth of the depletion region when a MOSFET is in the off state?

In the off state, when the gate-source voltage is below the threshold voltage, the depletion region depth in the source is significant, preventing the flow of current between the source and drain.

How to Calculate Depth of Depletion Region Associated with Source?

Depth of Depletion Region Associated with Source calculator uses Source's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*Built in Junction Potential)/([Charge-e]*Doping Concentration of Acceptor)) to calculate the Source's Depth of Depletion Region, The Depth of Depletion Region Associated with Source formula is defined as The depletion region forms near the source terminal when a voltage is applied to the gate terminal. Source's Depth of Depletion Region is denoted by x_dS symbol.

How to calculate Depth of Depletion Region Associated with Source using this online calculator? To use this online calculator for Depth of Depletion Region Associated with Source, enter Built in Junction Potential (Φ_o) & Doping Concentration of Acceptor (N_A) and hit the calculate button. Here is how the Depth of Depletion Region Associated with Source calculation can be explained with given input values -> 1.5E+7 = sqrt((2*[Permitivity-silicon]*2)/([Charge-e]*1320000)).

FAQ

What is Depth of Depletion Region Associated with Source?

The Depth of Depletion Region Associated with Source formula is defined as The depletion region forms near the source terminal when a voltage is applied to the gate terminal and is represented as x_dS = sqrt((2*[Permitivity-silicon]*Φ_o)/([Charge-e]*N_A)) or Source's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*Built in Junction Potential)/([Charge-e]*Doping Concentration of Acceptor)). Built in Junction Potential refers to the potential difference or voltage that exists across a semiconductor junction when it is not connected to an external voltage source & Doping Concentration of Acceptor refers to the concentration of acceptor atoms intentionally added to a semiconductor material.

How to calculate Depth of Depletion Region Associated with Source?

The Depth of Depletion Region Associated with Source formula is defined as The depletion region forms near the source terminal when a voltage is applied to the gate terminal is calculated using Source's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*Built in Junction Potential)/([Charge-e]*Doping Concentration of Acceptor)). To calculate Depth of Depletion Region Associated with Source, you need Built in Junction Potential (Φ_o) & Doping Concentration of Acceptor (N_A). With our tool, you need to enter the respective value for Built in Junction Potential & Doping Concentration of Acceptor and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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