Donor Concentration Calculator

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SSD Junction

Electrons & Holes

Energy Band & Charge Carrier

Semiconductor Carriers

✖Total Acceptor Charge refers to the overall net charge associated with the acceptor atoms in a semiconductor material or device.ⓘ Total Acceptor Charge [\|Q\|]			+10% -10%
✖Charge Penetration P-type refers to the phenomenon where dopant atoms, such as boron or gallium, introduce holes into the crystal lattice of the semiconductor material, typically silicon or germanium.ⓘ Charge Penetration P-type [x_po]			+10% -10%
✖The Junction Area is the boundary or interface area between two types of semiconductor materials in a pn diode.ⓘ Junction Area [A_j]			+10% -10%

✖Donor concentration refers to the concentration or density of donor atoms in a semiconductor material.ⓘ Donor Concentration [N_d]

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Formula

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Donor Concentration

Formula

`"N"_{"d"} = "|Q|"/("[Charge-e]"*"x"_{"po"}*"A"_{"j"})`

Example

`"2.5E^35/m³"="13C"/("[Charge-e]"*"0.06μm"*"5401.3µm²")`

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Donor Concentration Solution

STEP 0: Pre-Calculation Summary

Formula Used

Donor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration P-type*Junction Area)
N_d = |Q|/([Charge-e]*x_po*A_j)
This formula uses 1 Constants, 4 Variables

Constants Used

[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Variables Used

Donor Concentration - (Measured in 1 per Cubic Meter) - Donor concentration refers to the concentration or density of donor atoms in a semiconductor material.
Total Acceptor Charge - (Measured in Coulomb) - Total Acceptor Charge refers to the overall net charge associated with the acceptor atoms in a semiconductor material or device.
Charge Penetration P-type - (Measured in Meter) - Charge Penetration P-type refers to the phenomenon where dopant atoms, such as boron or gallium, introduce holes into the crystal lattice of the semiconductor material, typically silicon or germanium.
Junction Area - (Measured in Square Meter) - The Junction Area is the boundary or interface area between two types of semiconductor materials in a pn diode.

STEP 1: Convert Input(s) to Base Unit

Total Acceptor Charge: 13 Coulomb --> 13 Coulomb No Conversion Required
Charge Penetration P-type: 0.06 Micrometer --> 6E-08 Meter (Check conversion here)
Junction Area: 5401.3 Square Micrometer --> 5.4013E-09 Square Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

N_d = |Q|/([Charge-e]*x_po*A_j) --> 13/([Charge-e]*6E-08*5.4013E-09)

Evaluating ... ...

N_d = 2.50370647427462E+35

STEP 3: Convert Result to Output's Unit

2.50370647427462E+35 1 per Cubic Meter --> No Conversion Required

FINAL ANSWER

2.50370647427462E+35 ≈ 2.5E+35 1 per Cubic Meter <-- Donor Concentration

(Calculation completed in 00.004 seconds)

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Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

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< 16 SSD Junction Calculators

Junction Capacitance

Go Junction Capacitance = (Junction Area/2)*sqrt((2*[Charge-e]*Constant Length Offset*Doping Concentration of Base)/(Source Voltage-Source Voltage 1))

Length of P-Side Junction

Go Length of P-Side Junction = (Optical Current/([Charge-e]*Junction Area*Optical Generation Rate))-(Junction Transition Width+Diffusion Length of Transition Region)

Junction Transition Width

Go Junction Transition Width = Charge Penetration N-type*((Acceptor Concentration+Donor Concentration)/Acceptor Concentration)

Series Resistance in P-type

Go Series Resistance in P Junction = ((Source Voltage-Junction Voltage)/Electric Current)-Series Resistance in N Junction

Series Resistance in N-type

Go Series Resistance in N Junction = ((Source Voltage-Junction Voltage)/Electric Current)-Series Resistance in P Junction

Junction Voltage

Go Junction Voltage = Source Voltage-(Series Resistance in P Junction+Series Resistance in N Junction)*Electric Current

Cross-Sectional Area of Junction

Go Junction Area = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Acceptor Concentration)

Acceptor Concentration

Go Acceptor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration N-type*Junction Area)

N-Type Width

Go Charge Penetration N-type = Total Acceptor Charge/(Junction Area*Acceptor Concentration*[Charge-e])

Total Acceptor Charge

Go Total Acceptor Charge = [Charge-e]*Charge Penetration N-type*Junction Area*Acceptor Concentration

Donor Concentration

Go Donor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration P-type*Junction Area)

Absorption Coefficient

Go Absorption Coefficient = (-1/Sample Thickness)*ln(Absorbed Power/Incident Power)

Absorbed Power

Go Absorbed Power = Incident Power*exp(-Sample Thickness*Absorption Coefficient)

Net Distribution of Charge

Go Net Distribution = (Donor Concentration-Acceptor Concentration)/Graded Constant

P-N Junction Length

Go Junction Length = Constant Length Offset+Effective Channel Length

Quantum Number

Go Quantum Number = [Coulomb]*Potential Well Length/3.14

Donor Concentration Formula

Donor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration P-type*Junction Area)
N_d = |Q|/([Charge-e]*x_po*A_j)

What is a Donor atom?

A donor is a dopant atom that, when added to a semiconductor, can form a n-type region. A donor atom has more electrons available for bonding with neighboring atoms than is required for an atom in the host semiconductor.

How to Calculate Donor Concentration?

Donor Concentration calculator uses Donor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration P-type*Junction Area) to calculate the Donor Concentration, The Donor Concentration formula is defined as these concentrations can be changed by many orders of magnitude by doping, which means adding to a semiconductor impurity atoms that can “donate” electrons to the conduction band. Donor Concentration is denoted by N_d symbol.

How to calculate Donor Concentration using this online calculator? To use this online calculator for Donor Concentration, enter Total Acceptor Charge (|Q|), Charge Penetration P-type (x_po) & Junction Area (A_j) and hit the calculate button. Here is how the Donor Concentration calculation can be explained with given input values -> 2.5E+35 = 13/([Charge-e]*6E-08*5.4013E-09).

FAQ

What is Donor Concentration?

The Donor Concentration formula is defined as these concentrations can be changed by many orders of magnitude by doping, which means adding to a semiconductor impurity atoms that can “donate” electrons to the conduction band and is represented as N_d = |Q|/([Charge-e]*x_po*A_j) or Donor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration P-type*Junction Area). Total Acceptor Charge refers to the overall net charge associated with the acceptor atoms in a semiconductor material or device, Charge Penetration P-type refers to the phenomenon where dopant atoms, such as boron or gallium, introduce holes into the crystal lattice of the semiconductor material, typically silicon or germanium & The Junction Area is the boundary or interface area between two types of semiconductor materials in a pn diode.

How to calculate Donor Concentration?

The Donor Concentration formula is defined as these concentrations can be changed by many orders of magnitude by doping, which means adding to a semiconductor impurity atoms that can “donate” electrons to the conduction band is calculated using Donor Concentration = Total Acceptor Charge/([Charge-e]*Charge Penetration P-type*Junction Area). To calculate Donor Concentration, you need Total Acceptor Charge (|Q|), Charge Penetration P-type (x_po) & Junction Area (A_j). With our tool, you need to enter the respective value for Total Acceptor Charge, Charge Penetration P-type & Junction Area and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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