Drain Current Flowing through MOS Transistor Solution

STEP 0: Pre-Calculation Summary
Formula Used
Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage)
ID = (W/L)*μn*Cox*int((VGS-x-VT),x,0,VDS)
This formula uses 1 Functions, 8 Variables
Functions Used
int - The definite integral can be used to calculate net signed area, which is the area above the x -axis minus the area below the x -axis., int(expr, arg, from, to)
Variables Used
Drain Current - (Measured in Ampere) - Drain Current is the current flowing from the drain terminal to the source terminal, controlled by the voltage applied to the gate.
Channel Width - (Measured in Meter) - Channel Width represents the width of the conducting channel within a MOSFET, directly affecting the amount of current it can handle.
Channel Length - (Measured in Meter) - Channel Length in a MOSFET is the distance between the source and drain regions, determining how easily current flows and impacting transistor performance.
Electron Mobility - (Measured in Square Meter per Volt per Second) - Electron Mobility in MOSFET describes how easily electrons can move through the channel, directly impacting the current flow for a given voltage.
Oxide Capacitance - (Measured in Farad) - Oxide Capacitance refers to the capacitance associated with the insulating oxide layer in a Metal-Oxide-Semiconductor (MOS) structure, such as in MOSFETs.
Gate Source Voltage - (Measured in Volt) - Gate Source Voltage is the voltage applied between the gate and source terminals of a MOSFET.
Threshold Voltage - (Measured in Volt) - Threshold Voltage is the minimum gate-to-source voltage required in a MOSFET to turn it "on" and allow a significant current to flow.
Drain Source Voltage - (Measured in Volt) - Drain Source Voltage is the voltage applied between drain and source terminal.
STEP 1: Convert Input(s) to Base Unit
Channel Width: 2.678 Meter --> 2.678 Meter No Conversion Required
Channel Length: 3.45 Meter --> 3.45 Meter No Conversion Required
Electron Mobility: 9.92 Square Meter per Volt per Second --> 9.92 Square Meter per Volt per Second No Conversion Required
Oxide Capacitance: 3.9 Farad --> 3.9 Farad No Conversion Required
Gate Source Voltage: 29.65 Volt --> 29.65 Volt No Conversion Required
Threshold Voltage: 5.91 Volt --> 5.91 Volt No Conversion Required
Drain Source Voltage: 45 Volt --> 45 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
ID = (W/L)*μn*Cox*int((VGS-x-VT),x,0,VDS) --> (2.678/3.45)*9.92*3.9*int((29.65-x-5.91),x,0,45)
Evaluating ... ...
ID = 1675.72193947826
STEP 3: Convert Result to Output's Unit
1675.72193947826 Ampere --> No Conversion Required
FINAL ANSWER
1675.72193947826 1675.722 Ampere <-- Drain Current
(Calculation completed in 00.004 seconds)

Credits

Created by Vignesh Naidu
Vellore Institute of Technology (VIT), Vellore,Tamil Nadu
Vignesh Naidu has created this Calculator and 25+ more calculators!
Verified by Dipanjona Mallick
Heritage Insitute of technology (HITK), Kolkata
Dipanjona Mallick has verified this Calculator and 50+ more calculators!

21 MOS Transistor Calculators

Sidewall Voltage Equivalence Factor
Go Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage)))
Pull down Current in Linear Region
Go Linear Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(2*(Gate Source Voltage-Threshold Voltage)*Output Voltage-Output Voltage^2))
Node Voltage at Given Instance
Go Node Voltage at Given Instance = (Transconductance Factor/Node Capacitance)*int(exp(-(1/(Node Resistance*Node Capacitance))*(Time Period-x))*Current Flowing into Node*x,x,0,Time Period)
Pull down Current in Saturation Region
Go Saturation Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(Gate Source Voltage-Threshold Voltage)^2)
Saturation Time
Go Saturation Time = -2*Load Capacitance/(Transconductance Process Parameter*(High Output Voltage-Threshold Voltage)^2)*int(1,x,High Output Voltage,High Output Voltage-Threshold Voltage)
Drain Current Flowing through MOS Transistor
Go Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage)
Time Delay when NMOS Operates in Linear Region
Go Linear Region in Time Delay = -2*Junction Capacitance*int(1/(Transconductance Process Parameter*(2*(Input Voltage-Threshold Voltage)*x-x^2)),x,Initial Voltage,Final Voltage)
Depletion Region Charge Density
Go Density of Depletion Layer Charge = (sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(Surface Potential-Bulk Fermi Potential)))
Depth of Depletion Region Associated with Drain
Go Drain's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*(Built in Junction Potential+Drain Source Voltage))/([Charge-e]*Doping Concentration of Acceptor))
Drain Current in Saturation Region in MOS Transistor
Go Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length)
Fermi Potential for P Type
Go Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)
Maximum Depletion Depth
Go Maximum Depletion Depth = sqrt((2*[Permitivity-silicon]*modulus(2*Bulk Fermi Potential))/([Charge-e]*Doping Concentration of Acceptor))
Fermi Potential for N Type
Go Fermi Potential for N Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Donor Dopant Concentration/Intrinsic Carrier Concentration)
Equivalent Large Signal Capacitance
Go Equivalent Large Signal Capacitance = (1/(Final Voltage-Initial Voltage))*int(Junction Capacitance*x,x,Initial Voltage,Final Voltage)
Built in Potential at Depletion Region
Go Built in Voltage = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(-2*Bulk Fermi Potential)))
Depth of Depletion Region Associated with Source
Go Source's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*Built in Junction Potential)/([Charge-e]*Doping Concentration of Acceptor))
Substrate Bias Coefficient
Go Substrate Bias Coefficient = sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor)/Oxide Capacitance
Average Power Dissipated over Period of Time
Go Average Power = (1/Total Time Taken)*int(Voltage*Current,x,0,Total Time Taken)
Equivalent Large Signal Junction Capacitance
Go Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor
Work Function in MOSFET
Go Work Function = Vaccum Level+(Conduction Band Energy Level-Fermi Level)
Zero Bias Sidewall Junction Capacitance per Unit Length
Go Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall

Drain Current Flowing through MOS Transistor Formula

Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage)
ID = (W/L)*μn*Cox*int((VGS-x-VT),x,0,VDS)

What are the Applications of Drain Current Flowing through MOS Transistor ?

1. Digital Logic Circuits: MOSFETs act as switches, turning on and off the flow of drain current based on the gate voltage. This forms the basis for digital logic gates like inverters, NAND, and NOR, which are the building blocks of CPUs and other digital circuits.
2. Analog Amplifiers: By varying the gate voltage, the drain current can be precisely controlled. This allows MOSFETs to amplify weak analog signals, used in audio amplifiers, sensor interfaces, and various communication circuits.
3. Power Electronics: Large MOSFETs can handle high currents and voltages, making them ideal for switching and controlling power flow in applications like motor drives, solar inverters, and power supply circuits.

How to Calculate Drain Current Flowing through MOS Transistor?

Drain Current Flowing through MOS Transistor calculator uses Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage) to calculate the Drain Current, The Drain Current Flowing through MOS Transistor formula is defined as the current flowing from the drain terminal to the source terminal, controlled by the voltage applied to the gate. Drain Current is denoted by ID symbol.

How to calculate Drain Current Flowing through MOS Transistor using this online calculator? To use this online calculator for Drain Current Flowing through MOS Transistor, enter Channel Width (W), Channel Length (L), Electron Mobility n), Oxide Capacitance (Cox), Gate Source Voltage (VGS), Threshold Voltage (VT) & Drain Source Voltage (VDS) and hit the calculate button. Here is how the Drain Current Flowing through MOS Transistor calculation can be explained with given input values -> -23935.795961 = (2.678/3.45)*9.92*3.9*int((29.65-x-5.91),x,0,45).

FAQ

What is Drain Current Flowing through MOS Transistor?
The Drain Current Flowing through MOS Transistor formula is defined as the current flowing from the drain terminal to the source terminal, controlled by the voltage applied to the gate and is represented as ID = (W/L)*μn*Cox*int((VGS-x-VT),x,0,VDS) or Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage). Channel Width represents the width of the conducting channel within a MOSFET, directly affecting the amount of current it can handle, Channel Length in a MOSFET is the distance between the source and drain regions, determining how easily current flows and impacting transistor performance, Electron Mobility in MOSFET describes how easily electrons can move through the channel, directly impacting the current flow for a given voltage, Oxide Capacitance refers to the capacitance associated with the insulating oxide layer in a Metal-Oxide-Semiconductor (MOS) structure, such as in MOSFETs, Gate Source Voltage is the voltage applied between the gate and source terminals of a MOSFET, Threshold Voltage is the minimum gate-to-source voltage required in a MOSFET to turn it "on" and allow a significant current to flow & Drain Source Voltage is the voltage applied between drain and source terminal.
How to calculate Drain Current Flowing through MOS Transistor?
The Drain Current Flowing through MOS Transistor formula is defined as the current flowing from the drain terminal to the source terminal, controlled by the voltage applied to the gate is calculated using Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage). To calculate Drain Current Flowing through MOS Transistor, you need Channel Width (W), Channel Length (L), Electron Mobility n), Oxide Capacitance (Cox), Gate Source Voltage (VGS), Threshold Voltage (VT) & Drain Source Voltage (VDS). With our tool, you need to enter the respective value for Channel Width, Channel Length, Electron Mobility, Oxide Capacitance, Gate Source Voltage, Threshold Voltage & Drain Source Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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