Drain Current Flowing through MOS Transistor Calculator

✖Channel Width represents the width of the conducting channel within a MOSFET, directly affecting the amount of current it can handle.ⓘ Channel Width [W]			+10% -10%
✖Channel Length in a MOSFET is the distance between the source and drain regions, determining how easily current flows and impacting transistor performance.ⓘ Channel Length [L]			+10% -10%
✖Electron Mobility in MOSFET describes how easily electrons can move through the channel, directly impacting the current flow for a given voltage.ⓘ Electron Mobility [μ_n]			+10% -10%
✖Oxide Capacitance refers to the capacitance associated with the insulating oxide layer in a Metal-Oxide-Semiconductor (MOS) structure, such as in MOSFETs.ⓘ Oxide Capacitance [C_ox]			+10% -10%
✖Gate Source Voltage is the voltage applied between the gate and source terminals of a MOSFET.ⓘ Gate Source Voltage [V_GS]			+10% -10%
✖Threshold Voltage is the minimum gate-to-source voltage required in a MOSFET to turn it "on" and allow a significant current to flow.ⓘ Threshold Voltage [V_T]			+10% -10%
✖Drain Source Voltage is the voltage applied between drain and source terminal.ⓘ Drain Source Voltage [V_DS]			+10% -10%

✖Drain Current is the current flowing from the drain terminal to the source terminal, controlled by the voltage applied to the gate.ⓘ Drain Current Flowing through MOS Transistor [I_D]

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Formula

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Drain Current Flowing through MOS Transistor

Formula

`"I"_{"D"} = ("W"/"L")*"μ"_{"n"}*"C"_{"ox"}*int(("V"_{"GS"}-x-"V"_{"T"}),x,0,"V"_{"DS"})`

Example

`"1675.722A"=("2.678m"/"3.45m")*"9.92m²/V*s"*"3.9F"*int(("29.65V"-x-"5.91V"),x,0,"45V")`

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Drain Current Flowing through MOS Transistor Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage)
I_D = (W/L)*μ_n*C_ox*int((V_GS-x-V_T),x,0,V_DS)
This formula uses 1 Functions, 8 Variables

Functions Used

int - The definite integral can be used to calculate net signed area, which is the area above the x -axis minus the area below the x -axis., int(expr, arg, from, to)

Variables Used

Drain Current - (Measured in Ampere) - Drain Current is the current flowing from the drain terminal to the source terminal, controlled by the voltage applied to the gate.
Channel Width - (Measured in Meter) - Channel Width represents the width of the conducting channel within a MOSFET, directly affecting the amount of current it can handle.
Channel Length - (Measured in Meter) - Channel Length in a MOSFET is the distance between the source and drain regions, determining how easily current flows and impacting transistor performance.
Electron Mobility - (Measured in Square Meter per Volt per Second) - Electron Mobility in MOSFET describes how easily electrons can move through the channel, directly impacting the current flow for a given voltage.
Oxide Capacitance - (Measured in Farad) - Oxide Capacitance refers to the capacitance associated with the insulating oxide layer in a Metal-Oxide-Semiconductor (MOS) structure, such as in MOSFETs.
Gate Source Voltage - (Measured in Volt) - Gate Source Voltage is the voltage applied between the gate and source terminals of a MOSFET.
Threshold Voltage - (Measured in Volt) - Threshold Voltage is the minimum gate-to-source voltage required in a MOSFET to turn it "on" and allow a significant current to flow.
Drain Source Voltage - (Measured in Volt) - Drain Source Voltage is the voltage applied between drain and source terminal.

STEP 1: Convert Input(s) to Base Unit

Channel Width: 2.678 Meter --> 2.678 Meter No Conversion Required
Channel Length: 3.45 Meter --> 3.45 Meter No Conversion Required
Electron Mobility: 9.92 Square Meter per Volt per Second --> 9.92 Square Meter per Volt per Second No Conversion Required
Oxide Capacitance: 3.9 Farad --> 3.9 Farad No Conversion Required
Gate Source Voltage: 29.65 Volt --> 29.65 Volt No Conversion Required
Threshold Voltage: 5.91 Volt --> 5.91 Volt No Conversion Required
Drain Source Voltage: 45 Volt --> 45 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

I_D = (W/L)*μ_n*C_ox*int((V_GS-x-V_T),x,0,V_DS) --> (2.678/3.45)*9.92*3.9*int((29.65-x-5.91),x,0,45)

Evaluating ... ...

I_D = 1675.72193947826

STEP 3: Convert Result to Output's Unit

1675.72193947826 Ampere --> No Conversion Required

FINAL ANSWER

1675.72193947826 ≈ 1675.722 Ampere <-- Drain Current

(Calculation completed in 00.004 seconds)

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Created by Vignesh Naidu

Vellore Institute of Technology (VIT), Vellore,Tamil Nadu

Vignesh Naidu has created this Calculator and 25+ more calculators!

Verified by Dipanjona Mallick

Heritage Insitute of technology (HITK), Kolkata

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< 21 MOS Transistor Calculators

Sidewall Voltage Equivalence Factor

Go Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage)))

Pull down Current in Linear Region

Go Linear Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(2*(Gate Source Voltage-Threshold Voltage)*Output Voltage-Output Voltage^2))

Node Voltage at Given Instance

Go Node Voltage at Given Instance = (Transconductance Factor/Node Capacitance)*int(exp(-(1/(Node Resistance*Node Capacitance))*(Time Period-x))*Current Flowing into Node*x,x,0,Time Period)

Pull down Current in Saturation Region

Go Saturation Region Pull Down Current = sum(x,0,Number of Parallel Driver Transistors,(Electron Mobility*Oxide Capacitance/2)*(Channel Width/Channel Length)*(Gate Source Voltage-Threshold Voltage)^2)

Saturation Time

Go Saturation Time = -2*Load Capacitance/(Transconductance Process Parameter*(High Output Voltage-Threshold Voltage)^2)*int(1,x,High Output Voltage,High Output Voltage-Threshold Voltage)

Drain Current Flowing through MOS Transistor

Go Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage)

Time Delay when NMOS Operates in Linear Region

Go Linear Region in Time Delay = -2*Junction Capacitance*int(1/(Transconductance Process Parameter*(2*(Input Voltage-Threshold Voltage)*x-x^2)),x,Initial Voltage,Final Voltage)

Depletion Region Charge Density

Go Density of Depletion Layer Charge = (sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(Surface Potential-Bulk Fermi Potential)))

Depth of Depletion Region Associated with Drain

Go Drain's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*(Built in Junction Potential+Drain Source Voltage))/([Charge-e]*Doping Concentration of Acceptor))

Drain Current in Saturation Region in MOS Transistor

Go Saturation Region Drain Current = Channel Width*Saturation Electron Drift Velocity*int(Charge*Short Channel Parameter,x,0,Effective Channel Length)

Fermi Potential for P Type

Go Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)

Maximum Depletion Depth

Go Maximum Depletion Depth = sqrt((2*[Permitivity-silicon]*modulus(2*Bulk Fermi Potential))/([Charge-e]*Doping Concentration of Acceptor))

Fermi Potential for N Type

Go Fermi Potential for N Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Donor Dopant Concentration/Intrinsic Carrier Concentration)

Equivalent Large Signal Capacitance

Go Equivalent Large Signal Capacitance = (1/(Final Voltage-Initial Voltage))*int(Junction Capacitance*x,x,Initial Voltage,Final Voltage)

Built in Potential at Depletion Region

Go Built in Voltage = -(sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor*modulus(-2*Bulk Fermi Potential)))

Depth of Depletion Region Associated with Source

Go Source's Depth of Depletion Region = sqrt((2*[Permitivity-silicon]*Built in Junction Potential)/([Charge-e]*Doping Concentration of Acceptor))

Substrate Bias Coefficient

Go Substrate Bias Coefficient = sqrt(2*[Charge-e]*[Permitivity-silicon]*Doping Concentration of Acceptor)/Oxide Capacitance

Average Power Dissipated over Period of Time

Go Average Power = (1/Total Time Taken)*int(Voltage*Current,x,0,Total Time Taken)

Equivalent Large Signal Junction Capacitance

Go Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor

Work Function in MOSFET

Go Work Function = Vaccum Level+(Conduction Band Energy Level-Fermi Level)

Zero Bias Sidewall Junction Capacitance per Unit Length

Go Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall

Drain Current Flowing through MOS Transistor Formula

What are the Applications of Drain Current Flowing through MOS Transistor ?

1. Digital Logic Circuits: MOSFETs act as switches, turning on and off the flow of drain current based on the gate voltage. This forms the basis for digital logic gates like inverters, NAND, and NOR, which are the building blocks of CPUs and other digital circuits.
2. Analog Amplifiers: By varying the gate voltage, the drain current can be precisely controlled. This allows MOSFETs to amplify weak analog signals, used in audio amplifiers, sensor interfaces, and various communication circuits.
3. Power Electronics: Large MOSFETs can handle high currents and voltages, making them ideal for switching and controlling power flow in applications like motor drives, solar inverters, and power supply circuits.

How to Calculate Drain Current Flowing through MOS Transistor?

Drain Current Flowing through MOS Transistor calculator uses Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage) to calculate the Drain Current, The Drain Current Flowing through MOS Transistor formula is defined as the current flowing from the drain terminal to the source terminal, controlled by the voltage applied to the gate. Drain Current is denoted by I_D symbol.

How to calculate Drain Current Flowing through MOS Transistor using this online calculator? To use this online calculator for Drain Current Flowing through MOS Transistor, enter Channel Width (W), Channel Length (L), Electron Mobility (μ_n), Oxide Capacitance (C_ox), Gate Source Voltage (V_GS), Threshold Voltage (V_T) & Drain Source Voltage (V_DS) and hit the calculate button. Here is how the Drain Current Flowing through MOS Transistor calculation can be explained with given input values -> -23935.795961 = (2.678/3.45)*9.92*3.9*int((29.65-x-5.91),x,0,45).

FAQ

What is Drain Current Flowing through MOS Transistor?

The Drain Current Flowing through MOS Transistor formula is defined as the current flowing from the drain terminal to the source terminal, controlled by the voltage applied to the gate and is represented as I_D = (W/L)*μ_n*C_ox*int((V_GS-x-V_T),x,0,V_DS) or Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage). Channel Width represents the width of the conducting channel within a MOSFET, directly affecting the amount of current it can handle, Channel Length in a MOSFET is the distance between the source and drain regions, determining how easily current flows and impacting transistor performance, Electron Mobility in MOSFET describes how easily electrons can move through the channel, directly impacting the current flow for a given voltage, Oxide Capacitance refers to the capacitance associated with the insulating oxide layer in a Metal-Oxide-Semiconductor (MOS) structure, such as in MOSFETs, Gate Source Voltage is the voltage applied between the gate and source terminals of a MOSFET, Threshold Voltage is the minimum gate-to-source voltage required in a MOSFET to turn it "on" and allow a significant current to flow & Drain Source Voltage is the voltage applied between drain and source terminal.

How to calculate Drain Current Flowing through MOS Transistor?

The Drain Current Flowing through MOS Transistor formula is defined as the current flowing from the drain terminal to the source terminal, controlled by the voltage applied to the gate is calculated using Drain Current = (Channel Width/Channel Length)*Electron Mobility*Oxide Capacitance*int((Gate Source Voltage-x-Threshold Voltage),x,0,Drain Source Voltage). To calculate Drain Current Flowing through MOS Transistor, you need Channel Width (W), Channel Length (L), Electron Mobility (μ_n), Oxide Capacitance (C_ox), Gate Source Voltage (V_GS), Threshold Voltage (V_T) & Drain Source Voltage (V_DS). With our tool, you need to enter the respective value for Channel Width, Channel Length, Electron Mobility, Oxide Capacitance, Gate Source Voltage, Threshold Voltage & Drain Source Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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