Thermal Voltage of CMOS Solution

STEP 0: Pre-Calculation Summary
Formula Used
Thermal Voltage = Built-in Potential/ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Electron Concentration^2))
Vt = ψo/ln((Na*Nd)/(ni^2))
This formula uses 1 Functions, 5 Variables
Functions Used
ln - The natural logarithm, also known as the logarithm to the base e, is the inverse function of the natural exponential function., ln(Number)
Variables Used
Thermal Voltage - (Measured in Volt) - Thermal Voltage is the voltage produced within the p-n junction.
Built-in Potential - (Measured in Volt) - Built-in Potential is potential inside the MOSFET.
Acceptor Concentration - (Measured in 1 per Cubic Meter) - Acceptor Concentration is the concentration of holes in acceptor state.
Donor Concentration - (Measured in 1 per Cubic Meter) - Donor concentration is the concentration of electrons in the donor state.
Intrinsic Electron Concentration - Intrinsic Electron Concentration is defined as the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.
STEP 1: Convert Input(s) to Base Unit
Built-in Potential: 18.8 Volt --> 18.8 Volt No Conversion Required
Acceptor Concentration: 1100 1 per Cubic Meter --> 1100 1 per Cubic Meter No Conversion Required
Donor Concentration: 190000000000000 1 per Cubic Meter --> 190000000000000 1 per Cubic Meter No Conversion Required
Intrinsic Electron Concentration: 17 --> No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Vt = ψo/ln((Na*Nd)/(ni^2)) --> 18.8/ln((1100*190000000000000)/(17^2))
Evaluating ... ...
Vt = 0.549471683639064
STEP 3: Convert Result to Output's Unit
0.549471683639064 Volt --> No Conversion Required
FINAL ANSWER
0.549471683639064 0.549472 Volt <-- Thermal Voltage
(Calculation completed in 00.004 seconds)

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24 CMOS Design Characteristics Calculators

Ground to Agression Capacitance
Go Adjacent Capacitance = ((Victim Driver*Time Constant Ratio*Ground Capacitance)-(Agression Driver*Ground A Capacitance))/(Agression Driver-Victim Driver*Time Constant Ratio)
Victim Driver
Go Victim Driver = (Agression Driver*(Ground A Capacitance+Adjacent Capacitance))/(Time Constant Ratio*(Adjacent Capacitance+Ground Capacitance))
Agression Driver
Go Agression Driver = (Victim Driver*Time Constant Ratio*(Adjacent Capacitance+Ground Capacitance))/(Ground A Capacitance+Adjacent Capacitance)
Thermal Voltage of CMOS
Go Thermal Voltage = Built-in Potential/ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Electron Concentration^2))
Built-in Potential
Go Built-in Potential = Thermal Voltage*ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Electron Concentration^2))
Agressor Voltage
Go Agressor Voltage = (Victim Voltage*(Ground Capacitance+Adjacent Capacitance))/Adjacent Capacitance
Victim Voltage
Go Victim Voltage = (Agressor Voltage*Adjacent Capacitance)/(Ground Capacitance+Adjacent Capacitance)
Adjacent Capacitance
Go Adjacent Capacitance = (Victim Voltage*Ground Capacitance)/(Agressor Voltage-Victim Voltage)
Branching Effort
Go Branching Effort = (Capacitance Onpath+Capacitance Offpath)/Capacitance Onpath
Output Clock Phase
Go Output Clock Phase = 2*pi*VCO Control Voltage*VCO Gain
Total Capacitance Seen by Stage
Go Total Capacitance in Stage = Capacitance Onpath+Capacitance Offpath
Capacitance Offpath
Go Capacitance Offpath = Total Capacitance in Stage-Capacitance Onpath
Capacitance Onpath
Go Capacitance Onpath = Total Capacitance in Stage-Capacitance Offpath
Time Constant Ratio of Agression to Victim
Go Time Constant Ratio = Agression Time Constant/Victim Time Constant
Agression Time Constant
Go Agression Time Constant = Time Constant Ratio*Victim Time Constant
Victim Time Constant
Go Victim Time Constant = Agression Time Constant/Time Constant Ratio
Off-Path Capacitance of CMOS
Go Capacitance Offpath = Capacitance Onpath*(Branching Effort-1)
Change in Frequency Clock
Go Change in Frequency of Clock = VCO Gain*VCO Control Voltage
VCO Single Gain Factor
Go VCO Gain = Change in Frequency of Clock/VCO Control Voltage
VCO Control Voltage
Go VCO Control Voltage = Lock Voltage+VCO Offset Voltage
VCO Offset Voltage
Go VCO Offset Voltage = VCO Control Voltage-Lock Voltage
Lock Voltage
Go Lock Voltage = VCO Control Voltage-VCO Offset Voltage
Static Power Dissipation
Go Static Power = Static Current*Base Collector Voltage
Static Current
Go Static Current = Static Power/Base Collector Voltage

Thermal Voltage of CMOS Formula

Thermal Voltage = Built-in Potential/ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Electron Concentration^2))
Vt = ψo/ln((Na*Nd)/(ni^2))

What is drive?

"Drive" in digital electronics refers to the ability of a logic gate or circuit to deliver current to its output, influencing how quickly the output voltage transitions between logic levels and playing a vital role in determining the overall performance of digital systems.

How to Calculate Thermal Voltage of CMOS?

Thermal Voltage of CMOS calculator uses Thermal Voltage = Built-in Potential/ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Electron Concentration^2)) to calculate the Thermal Voltage, Thermal Voltage of CMOS is the voltage generated across a MOSFET device due to the temperature differences between the source and drain terminals. Thermal Voltage is denoted by Vt symbol.

How to calculate Thermal Voltage of CMOS using this online calculator? To use this online calculator for Thermal Voltage of CMOS, enter Built-in Potential o), Acceptor Concentration (Na), Donor Concentration (Nd) & Intrinsic Electron Concentration (ni) and hit the calculate button. Here is how the Thermal Voltage of CMOS calculation can be explained with given input values -> 0.549472 = 18.8/ln((1100*190000000000000)/(17^2)).

FAQ

What is Thermal Voltage of CMOS?
Thermal Voltage of CMOS is the voltage generated across a MOSFET device due to the temperature differences between the source and drain terminals and is represented as Vt = ψo/ln((Na*Nd)/(ni^2)) or Thermal Voltage = Built-in Potential/ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Electron Concentration^2)). Built-in Potential is potential inside the MOSFET, Acceptor Concentration is the concentration of holes in acceptor state, Donor concentration is the concentration of electrons in the donor state & Intrinsic Electron Concentration is defined as the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.
How to calculate Thermal Voltage of CMOS?
Thermal Voltage of CMOS is the voltage generated across a MOSFET device due to the temperature differences between the source and drain terminals is calculated using Thermal Voltage = Built-in Potential/ln((Acceptor Concentration*Donor Concentration)/(Intrinsic Electron Concentration^2)). To calculate Thermal Voltage of CMOS, you need Built-in Potential o), Acceptor Concentration (Na), Donor Concentration (Nd) & Intrinsic Electron Concentration (ni). With our tool, you need to enter the respective value for Built-in Potential, Acceptor Concentration, Donor Concentration & Intrinsic Electron Concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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