Effective Capacitance in CMOS Calculator

↳

Electronics

Chemical Engineering

Civil

Electrical

Electronics and Instrumentation

Materials Science

Mechanical

Production Engineering

⤿

CMOS Circuit Characteristics

Array Datapath Subsystem

CMOS Delay Characteristics

CMOS Design Characteristics

CMOS Inverters

CMOS Power Metrics

CMOS Special Purpose Subsystem

CMOS Time Characteristics

✖A Duty cycle or power cycle is the fraction of one period in which a signal or system is active.ⓘ Duty Cycle [D]			+10% -10%
✖Off Current of a switch is a non-exist value in the reality. Real switches have normally very small off current which some times called the leakage current.ⓘ Off Current [i_off]			+10% -10%
✖Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state.ⓘ Base Collector Voltage [V_bc]			+10% -10%
✖Gates on Critical Path are defined as the total number of the logic gate required during one cycle time in CMOS.ⓘ Gates on Critical Path [N_g]			+10% -10%

✖Effective Capacitance in CMOS is defined as the ratio of the amount of electric charge stored on a conductor to a difference in electric potential.ⓘ Effective Capacitance in CMOS [C_eff]

⎘ Copy

👎

Formula

✖

Effective Capacitance in CMOS

Formula

`"C"_{"eff"} = "D"*("i"_{"off"}*(10^("V"_{"bc"})))/("N"_{"g"}*"[BoltZ]"*"V"_{"bc"})`

Example

`"5.137895μF"="1.3E^-25"*("0.01mA"*(10^("2.02V")))/("0.95"*"[BoltZ]"*"2.02V")`

Calculator

LaTeX

Reset

👍

Download CMOS Circuit Characteristics Formulas PDF PDF Image

Effective Capacitance in CMOS Solution

STEP 0: Pre-Calculation Summary

Formula Used

Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage)
C_eff = D*(i_off*(10^(V_bc)))/(N_g*[BoltZ]*V_bc)
This formula uses 1 Constants, 5 Variables

Constants Used

[BoltZ] - Boltzmann constant Value Taken As 1.38064852E-23

Variables Used

Effective Capacitance in CMOS - (Measured in Farad) - Effective Capacitance in CMOS is defined as the ratio of the amount of electric charge stored on a conductor to a difference in electric potential.
Duty Cycle - A Duty cycle or power cycle is the fraction of one period in which a signal or system is active.
Off Current - (Measured in Ampere) - Off Current of a switch is a non-exist value in the reality. Real switches have normally very small off current which some times called the leakage current.
Base Collector Voltage - (Measured in Volt) - Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state.
Gates on Critical Path - Gates on Critical Path are defined as the total number of the logic gate required during one cycle time in CMOS.

STEP 1: Convert Input(s) to Base Unit

Duty Cycle: 1.3E-25 --> No Conversion Required
Off Current: 0.01 Milliampere --> 1E-05 Ampere (Check conversion here)
Base Collector Voltage: 2.02 Volt --> 2.02 Volt No Conversion Required
Gates on Critical Path: 0.95 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_eff = D*(i_off*(10^(V_bc)))/(N_g*[BoltZ]*V_bc) --> 1.3E-25*(1E-05*(10^(2.02)))/(0.95*[BoltZ]*2.02)

Evaluating ... ...

C_eff = 5.13789525162511E-06

STEP 3: Convert Result to Output's Unit

5.13789525162511E-06 Farad -->5.13789525162511 Microfarad (Check conversion here)

FINAL ANSWER

5.13789525162511 ≈ 5.137895 Microfarad <-- Effective Capacitance in CMOS

(Calculation completed in 00.004 seconds)

You are here -

Home » Engineering » Electronics » CMOS Design and Applications » CMOS Circuit Characteristics » Effective Capacitance in CMOS

Credits

Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

Shobhit Dimri has created this Calculator and 900+ more calculators!

Verified by Urvi Rathod

Vishwakarma Government Engineering College (VGEC), Ahmedabad

Urvi Rathod has verified this Calculator and 1900+ more calculators!

< 15 CMOS Circuit Characteristics Calculators

Effective Capacitance in CMOS

Go Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage)

Permittivity of Oxide Layer

Go Permittivity of Oxide Layer = Oxide Layer Thickness*Input Gate Capacitance/(Gate Width*Length of Gate)

Oxide Layer Thickness

Go Oxide Layer Thickness = Permittivity of Oxide Layer*Gate Width*Length of Gate/Input Gate Capacitance

Width of Gate

Go Gate Width = Input Gate Capacitance/(Capacitance of Gate Oxide Layer*Length of Gate)

Sidewall Perimeter of Source Diffusion

Go Sidewall Perimeter of Source Diffusion = (2*Transition Width)+(2*Length of Source)

Critical Electric Field

Go Critical Electric Field = (2*Velocity Saturation)/Mobility of Electron

Transition Width of CMOS

Go Transition Width = MOS Gate Overlap Capacitance/MOS Gate Capacitance

Effective Channel Length

Go Effective Channel Length = PN Junction Length-Depletion Region Width

Depletion Region Width

Go Depletion Region Width = PN Junction Length-Effective Channel Length

PN Junction Length

Go PN Junction Length = Depletion Region Width+Effective Channel Length

Voltage at Minimum EDP

Go Voltage at Minimum EDP = (3*Threshold Voltage)/(3-Activity Factor)

CMOS Critical Voltage

Go Critical Voltage in CMOS = Critical Electric Field*Mean Free Path

CMOS Mean Free Path

Go Mean Free Path = Critical Voltage in CMOS/Critical Electric Field

Width of Source Diffusion

Go Transition Width = Area of Source Diffusion/Length of Source

Area of Source Diffusion

Go Area of Source Diffusion = Length of Source*Transition Width

Effective Capacitance in CMOS Formula

Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage)
C_eff = D*(i_off*(10^(V_bc)))/(N_g*[BoltZ]*V_bc)

What is Subthreshold conduction ?

Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.

How to Calculate Effective Capacitance in CMOS?

Effective Capacitance in CMOS calculator uses Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage) to calculate the Effective Capacitance in CMOS, The Effective Capacitance in CMOS formula is defined as the ratio of the amount of electric charge stored on a conductor to a difference in electric potential. Effective Capacitance in CMOS is denoted by C_eff symbol.

How to calculate Effective Capacitance in CMOS using this online calculator? To use this online calculator for Effective Capacitance in CMOS, enter Duty Cycle (D), Off Current (i_off), Base Collector Voltage (V_bc) & Gates on Critical Path (N_g) and hit the calculate button. Here is how the Effective Capacitance in CMOS calculation can be explained with given input values -> 5.1E+6 = 1.3E-25*(1E-05*(10^(2.02)))/(0.95*[BoltZ]*2.02).

FAQ

What is Effective Capacitance in CMOS?

The Effective Capacitance in CMOS formula is defined as the ratio of the amount of electric charge stored on a conductor to a difference in electric potential and is represented as C_eff = D*(i_off*(10^(V_bc)))/(N_g*[BoltZ]*V_bc) or Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage). A Duty cycle or power cycle is the fraction of one period in which a signal or system is active, Off Current of a switch is a non-exist value in the reality. Real switches have normally very small off current which some times called the leakage current, Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state & Gates on Critical Path are defined as the total number of the logic gate required during one cycle time in CMOS.

How to calculate Effective Capacitance in CMOS?

The Effective Capacitance in CMOS formula is defined as the ratio of the amount of electric charge stored on a conductor to a difference in electric potential is calculated using Effective Capacitance in CMOS = Duty Cycle*(Off Current*(10^(Base Collector Voltage)))/(Gates on Critical Path*[BoltZ]*Base Collector Voltage). To calculate Effective Capacitance in CMOS, you need Duty Cycle (D), Off Current (i_off), Base Collector Voltage (V_bc) & Gates on Critical Path (N_g). With our tool, you need to enter the respective value for Duty Cycle, Off Current, Base Collector Voltage & Gates on Critical Path and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

Home

FREE PDFs

🔍 Search