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Effective Capacitance in CMOS Solution

STEP 0: Pre-Calculation Summary
Formula Used
effective_capacitance_in_cmos = duty Cycle*(off current*(10^Drain Voltage))/(Gates On Critical Path*Boltzmann constant*Drain Voltage)
Ceff = D*(Ioff*(10^vds))/(N*kB*vds)
This formula uses 5 Variables
Variables Used
duty Cycle- A duty cycle or power cycle is the fraction of one period in which a signal or system is active
off current - off current Such switch is not existing in the reality,. real switches have normally very small off current which some times called the leakage current (Measured in Ampere)
Drain Voltage - Drain Voltage is the voltage that falls across the gate-source terminal of the transistor. (Measured in Volt)
Gates On Critical Path- Gates On Critical Path total logic gate present
Boltzmann constant- The Boltzmann constant (kB or k) is the proportionality factor that relates the average relative kinetic energy of particles in a gas with the thermodynamic temperature of the gas
STEP 1: Convert Input(s) to Base Unit
duty Cycle: 0.1 --> No Conversion Required
off current: 0.001 Ampere --> 0.001 Ampere No Conversion Required
Drain Voltage: 8 Volt --> 8 Volt No Conversion Required
Gates On Critical Path: 5 --> No Conversion Required
Boltzmann constant: 1.380649 --> No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Ceff = D*(Ioff*(10^vds))/(N*kB*vds) --> 0.1*(0.001*(10^8))/(5*1.380649*8)
Evaluating ... ...
Ceff = 181.074262900998
STEP 3: Convert Result to Output's Unit
181.074262900998 Farad --> No Conversion Required
FINAL ANSWER
181.074262900998 Farad <-- Effective Capacitance in CMOS
(Calculation completed in 00.000 seconds)

10+ CMOS-VLSI Design Calculators

Drain Voltage
drain_voltage = sqrt(dynamic power/frequency*Capacitance) Go
Gate to Channel Voltage
gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage Go
Threshold Voltage
threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance) Go
Gate Capacitance
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Channel Charge
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Capacitor dynamic power
dynamic_power = Drain Voltage^2*frequency*Capacitance Go
Potential gate to Collector
potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2 Go
Potential Gate to Drain
potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source Go
Static Current
static_current = Static power/Drain Voltage Go
Static Power Dissipation
static_power = static current*Drain Voltage Go

Effective Capacitance in CMOS Formula

effective_capacitance_in_cmos = duty Cycle*(off current*(10^Drain Voltage))/(Gates On Critical Path*Boltzmann constant*Drain Voltage)
Ceff = D*(Ioff*(10^vds))/(N*kB*vds)

What is Subthreshold conduction ?

Subthreshold conduction or subthreshold leakage or subthreshold drain current is the current between the source and drain of a MOSFET when the transistor is in subthreshold region, or weak-inversion region, that is, for gate-to-source voltages below the threshold voltage.

How to Calculate Effective Capacitance in CMOS?

Effective Capacitance in CMOS calculator uses effective_capacitance_in_cmos = duty Cycle*(off current*(10^Drain Voltage))/(Gates On Critical Path*Boltzmann constant*Drain Voltage) to calculate the Effective Capacitance in CMOS, The Effective Capacitance in CMOS formula is defined as the ratio of the amount of electric charge stored on a conductor to a difference in electric potential. Effective Capacitance in CMOS and is denoted by Ceff symbol.

How to calculate Effective Capacitance in CMOS using this online calculator? To use this online calculator for Effective Capacitance in CMOS, enter duty Cycle (D), off current (Ioff), Drain Voltage (vds), Gates On Critical Path (N) and Boltzmann constant (kB) and hit the calculate button. Here is how the Effective Capacitance in CMOS calculation can be explained with given input values -> 181.0743 = 0.1*(0.001*(10^8))/(5*1.380649*8) .

FAQ

What is Effective Capacitance in CMOS?
The Effective Capacitance in CMOS formula is defined as the ratio of the amount of electric charge stored on a conductor to a difference in electric potential and is represented as Ceff = D*(Ioff*(10^vds))/(N*kB*vds) or effective_capacitance_in_cmos = duty Cycle*(off current*(10^Drain Voltage))/(Gates On Critical Path*Boltzmann constant*Drain Voltage) . A duty cycle or power cycle is the fraction of one period in which a signal or system is active, off current Such switch is not existing in the reality,. real switches have normally very small off current which some times called the leakage current, Drain Voltage is the voltage that falls across the gate-source terminal of the transistor, Gates On Critical Path total logic gate present and The Boltzmann constant (kB or k) is the proportionality factor that relates the average relative kinetic energy of particles in a gas with the thermodynamic temperature of the gas.
How to calculate Effective Capacitance in CMOS?
The Effective Capacitance in CMOS formula is defined as the ratio of the amount of electric charge stored on a conductor to a difference in electric potential is calculated using effective_capacitance_in_cmos = duty Cycle*(off current*(10^Drain Voltage))/(Gates On Critical Path*Boltzmann constant*Drain Voltage) . To calculate Effective Capacitance in CMOS, you need duty Cycle (D), off current (Ioff), Drain Voltage (vds), Gates On Critical Path (N) and Boltzmann constant (kB). With our tool, you need to enter the respective value for duty Cycle, off current, Drain Voltage, Gates On Critical Path and Boltzmann constant and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Effective Capacitance in CMOS?
In this formula, Effective Capacitance in CMOS uses duty Cycle, off current, Drain Voltage, Gates On Critical Path and Boltzmann constant. We can use 10 other way(s) to calculate the same, which is/are as follows -
  • dynamic_power = Drain Voltage^2*frequency*Capacitance
  • drain_voltage = sqrt(dynamic power/frequency*Capacitance)
  • static_power = static current*Drain Voltage
  • static_current = Static power/Drain Voltage
  • channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
  • channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
  • gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage
  • threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)
  • potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2
  • potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source
Where is the Effective Capacitance in CMOS calculator used?
Among many, Effective Capacitance in CMOS calculator is widely used in real life applications like {FormulaUses}. Here are few more real life examples -
{FormulaExamplesList}
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