Excitation Energy Calculator

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✖Effective Mass of Electron is a concept used in solid-state physics to describe the behavior of electrons in a crystal lattice or a semiconductor material.ⓘ Effective Mass of Electron [m_eff]

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✖Excitation Energy is the energy required to excite an electron from the valence band into the conduction band.ⓘ Excitation Energy [E_exc]

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Formula

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Excitation Energy

Formula

`"E"_{"exc"} = 1.6*10^-19*13.6*("m"_{"eff"}/"[Mass-e]")*(1/"[Permitivity-silicon]"^2)`

Example

`"0.021783eV"=1.6*10^-19*13.6*("0.2e-30kg"/"[Mass-e]")*(1/"[Permitivity-silicon]"^2)`

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Excitation Energy Solution

STEP 0: Pre-Calculation Summary

Formula Used

Excitation Energy = 1.6*10^-19*13.6*(Effective Mass of Electron/[Mass-e])*(1/[Permitivity-silicon]^2)
E_exc = 1.6*10^-19*13.6*(m_eff/[Mass-e])*(1/[Permitivity-silicon]^2)
This formula uses 2 Constants, 2 Variables

Constants Used

[Permitivity-silicon] - Permittivity of silicon Value Taken As 11.7
[Mass-e] - Mass of electron Value Taken As 9.10938356E-31

Variables Used

Excitation Energy - (Measured in Joule) - Excitation Energy is the energy required to excite an electron from the valence band into the conduction band.
Effective Mass of Electron - (Measured in Kilogram) - Effective Mass of Electron is a concept used in solid-state physics to describe the behavior of electrons in a crystal lattice or a semiconductor material.

STEP 1: Convert Input(s) to Base Unit

Effective Mass of Electron: 2E-31 Kilogram --> 2E-31 Kilogram No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

E_exc = 1.6*10^-19*13.6*(m_eff/[Mass-e])*(1/[Permitivity-silicon]^2) --> 1.6*10^-19*13.6*(2E-31/[Mass-e])*(1/[Permitivity-silicon]^2)

Evaluating ... ...

E_exc = 3.49002207792288E-21

STEP 3: Convert Result to Output's Unit

3.49002207792288E-21 Joule -->0.0217829950066942 Electron-Volt (Check conversion here)

FINAL ANSWER

0.0217829950066942 ≈ 0.021783 Electron-Volt <-- Excitation Energy

(Calculation completed in 00.004 seconds)

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Home » Engineering » Electronics » Opto Electronics Devices » Devices with Optical Components » Excitation Energy

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Created by Priyanka G Chalikar

The National Institute Of Engineering (NIE), Mysuru

Priyanka G Chalikar has created this Calculator and 10+ more calculators!

Verified by Parminder Singh

Chandigarh University (CU), Punjab

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< 14 Devices with Optical Components Calculators

PN Junction Capacitance

Go Junction Capacitance = PN Junction Area/2*sqrt((2*[Charge-e]*Relative Permittivity*[Permitivity-silicon])/(Voltage Across PN Junction-(Reverse Bias Voltage))*((Acceptor Concentration*Donor Concentration)/(Acceptor Concentration+Donor Concentration)))

Electron Concentration under Unbalanced Condition

Go Electron Concentration = Intrinsic Electron Concentration*exp((Quasi Fermi Level of Electrons-Intrinsic Energy Level of Semiconductor)/([BoltZ]*Absolute Temperature))

Diffusion Length of Transition Region

Go Diffusion Length of Transition Region = Optical Current/(Charge*PN Junction Area*Optical Generation Rate)-(Transition Width+Length of P-Side Junction)

Current Due to Optically Generated Carrier

Go Optical Current = Charge*PN Junction Area*Optical Generation Rate*(Transition Width+Diffusion Length of Transition Region+Length of P-Side Junction)

Peak Retardation

Go Peak Retardation = (2*pi)/Wavelength of Light*Length of Fiber*Refractive Index^3*Modulation Voltage

Maximum Acceptance Angle of Compound Lens

Go Acceptance Angle = asin(Refractive Index of Medium 1*Radius of Lens*sqrt(Positive Constant))

Effective Density of States in Conduction Band

Go Effective Density of States = 2*(2*pi*Effective Mass of Electron*[BoltZ]*Absolute Temperature/[hP]^2)^(3/2)

Diffusion Coefficient of Electron

Go Electron Diffusion Coefficient = Mobility of Electron*[BoltZ]*Absolute Temperature/[Charge-e]

Diffraction using Fresnel-Kirchoff Formula

Go Diffraction Angle = asin(1.22*Wavelength of Visible Light/Diameter of Aperture)

Fringe Spacing given Apex Angle

Go Fringe Space = Wavelength of Visible Light/(2*tan(Angle of Interference))

Excitation Energy

Go Excitation Energy = 1.6*10^-19*13.6*(Effective Mass of Electron/[Mass-e])*(1/[Permitivity-silicon]^2)

Brewsters Angle

Go Brewster's Angle = arctan(Refractive Index of Medium 1/Refractive Index)

Angle of Rotation of Plane of Polarization

Go Angle of Rotation = 1.8*Magnetic Flux Density*Length of Medium

Apex Angle

Go Apex Angle = tan(Alpha)

Excitation Energy Formula

Excitation Energy = 1.6*10^-19*13.6*(Effective Mass of Electron/[Mass-e])*(1/[Permitivity-silicon]^2)
E_exc = 1.6*10^-19*13.6*(m_eff/[Mass-e])*(1/[Permitivity-silicon]^2)

What are the two forms of excitation energy?

Ea and Ed are the acceptor excitation energies and donor excitation energies respectively. Ea is used when Si is doped with trivalent dopants and Ed, with pentavalent dopants.

How to Calculate Excitation Energy?

Excitation Energy calculator uses Excitation Energy = 1.6*10^-19*13.6*(Effective Mass of Electron/[Mass-e])*(1/[Permitivity-silicon]^2) to calculate the Excitation Energy, The Excitation Energy formula is defined as the energy required to excite an electron from the valence band into the conduction band of a semiconductor. It is usually measured in terms of eV. Excitation Energy is denoted by E_exc symbol.

How to calculate Excitation Energy using this online calculator? To use this online calculator for Excitation Energy, enter Effective Mass of Electron (m_eff) and hit the calculate button. Here is how the Excitation Energy calculation can be explained with given input values -> 1.4E+17 = 1.6*10^-19*13.6*(2E-31/[Mass-e])*(1/[Permitivity-silicon]^2).

FAQ

What is Excitation Energy?

The Excitation Energy formula is defined as the energy required to excite an electron from the valence band into the conduction band of a semiconductor. It is usually measured in terms of eV and is represented as E_exc = 1.6*10^-19*13.6*(m_eff/[Mass-e])*(1/[Permitivity-silicon]^2) or Excitation Energy = 1.6*10^-19*13.6*(Effective Mass of Electron/[Mass-e])*(1/[Permitivity-silicon]^2). Effective Mass of Electron is a concept used in solid-state physics to describe the behavior of electrons in a crystal lattice or a semiconductor material.

How to calculate Excitation Energy?

The Excitation Energy formula is defined as the energy required to excite an electron from the valence band into the conduction band of a semiconductor. It is usually measured in terms of eV is calculated using Excitation Energy = 1.6*10^-19*13.6*(Effective Mass of Electron/[Mass-e])*(1/[Permitivity-silicon]^2). To calculate Excitation Energy, you need Effective Mass of Electron (m_eff). With our tool, you need to enter the respective value for Effective Mass of Electron and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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