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Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
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Gate leakage through gate dielectric Solution

STEP 0: Pre-Calculation Summary
Formula Used
gate_current = (CMOS Static Power/Drain Voltage)-(subthreshold current+contention current+junction current)
Igate = (Pstatic/vds)-(Ist+Icontention+Ijun)
This formula uses 5 Variables
Variables Used
CMOS Static Power - CMOS Static Power is the static power (Measured in Watt)
Drain Voltage - Drain Voltage is the voltage that falls across the gate-source terminal of the transistor. (Measured in Volt)
subthreshold current - subthreshold current is subthreshold leakage through OFF transistors (Measured in Ampere)
contention current - contention current is contention current in ratioed circuits (Measured in Ampere)
junction current - junction current is junction leakage from source/drain diffusions (Measured in Ampere)
STEP 1: Convert Input(s) to Base Unit
CMOS Static Power: 6 Watt --> 6 Watt No Conversion Required
Drain Voltage: 8 Volt --> 8 Volt No Conversion Required
subthreshold current: 8 Ampere --> 8 Ampere No Conversion Required
contention current: 9 Ampere --> 9 Ampere No Conversion Required
junction current: 2 Ampere --> 2 Ampere No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Igate = (Pstatic/vds)-(Ist+Icontention+Ijun) --> (6/8)-(8+9+2)
Evaluating ... ...
Igate = -18.25
STEP 3: Convert Result to Output's Unit
-18.25 Ampere --> No Conversion Required
FINAL ANSWER
-18.25 Ampere <-- gate current
(Calculation completed in 00.016 seconds)

10+ CMOS-VLSI Design Calculators

Drain Voltage
drain_voltage = sqrt(dynamic power/frequency*Capacitance) Go
Gate to Channel Voltage
gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage Go
Threshold Voltage
threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance) Go
Gate Capacitance
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Channel Charge
channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage) Go
Capacitor dynamic power
dynamic_power = Drain Voltage^2*frequency*Capacitance Go
Potential gate to Collector
potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2 Go
Potential Gate to Drain
potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source Go
Static Current
static_current = Static power/Drain Voltage Go
Static Power Dissipation
static_power = static current*Drain Voltage Go

Gate leakage through gate dielectric Formula

gate_current = (CMOS Static Power/Drain Voltage)-(subthreshold current+contention current+junction current)
Igate = (Pstatic/vds)-(Ist+Icontention+Ijun)

Is MOSFET a current-control device?

The MOSFET, like the FET, is a voltage controlled device. A voltage input to the gate controls the flow of current from source to drain. The gate does not draw a continuous current.

How to Calculate Gate leakage through gate dielectric?

Gate leakage through gate dielectric calculator uses gate_current = (CMOS Static Power/Drain Voltage)-(subthreshold current+contention current+junction current) to calculate the gate current, The Gate leakage through gate dielectric formula is defined as When there is no voltage between the gate and source terminals, no current flows in the drain except leakage current, because of a very high drain-source impedance. gate current and is denoted by Igate symbol.

How to calculate Gate leakage through gate dielectric using this online calculator? To use this online calculator for Gate leakage through gate dielectric, enter CMOS Static Power (Pstatic), Drain Voltage (vds), subthreshold current (Ist), contention current (Icontention) and junction current (Ijun) and hit the calculate button. Here is how the Gate leakage through gate dielectric calculation can be explained with given input values -> -18.25 = (6/8)-(8+9+2).

FAQ

What is Gate leakage through gate dielectric?
The Gate leakage through gate dielectric formula is defined as When there is no voltage between the gate and source terminals, no current flows in the drain except leakage current, because of a very high drain-source impedance and is represented as Igate = (Pstatic/vds)-(Ist+Icontention+Ijun) or gate_current = (CMOS Static Power/Drain Voltage)-(subthreshold current+contention current+junction current). CMOS Static Power is the static power, Drain Voltage is the voltage that falls across the gate-source terminal of the transistor, subthreshold current is subthreshold leakage through OFF transistors, contention current is contention current in ratioed circuits and junction current is junction leakage from source/drain diffusions.
How to calculate Gate leakage through gate dielectric?
The Gate leakage through gate dielectric formula is defined as When there is no voltage between the gate and source terminals, no current flows in the drain except leakage current, because of a very high drain-source impedance is calculated using gate_current = (CMOS Static Power/Drain Voltage)-(subthreshold current+contention current+junction current). To calculate Gate leakage through gate dielectric, you need CMOS Static Power (Pstatic), Drain Voltage (vds), subthreshold current (Ist), contention current (Icontention) and junction current (Ijun). With our tool, you need to enter the respective value for CMOS Static Power, Drain Voltage, subthreshold current, contention current and junction current and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate gate current?
In this formula, gate current uses CMOS Static Power, Drain Voltage, subthreshold current, contention current and junction current. We can use 10 other way(s) to calculate the same, which is/are as follows -
  • dynamic_power = Drain Voltage^2*frequency*Capacitance
  • drain_voltage = sqrt(dynamic power/frequency*Capacitance)
  • static_power = static current*Drain Voltage
  • static_current = Static power/Drain Voltage
  • channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
  • channel_charge = Gate Capacitance*(Gate to Channel Voltage-Threshold voltage)
  • gate_to_channel_voltage = (Channel Charge/Gate Capacitance)+Threshold voltage
  • threshold_voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)
  • potential_gate_to_collector = (Potential Gate to Source+Potential Gate to Drain)/2
  • potential_gate_to_drain = 2*potential gate to collector-Potential Gate to Source
Where is the Gate leakage through gate dielectric calculator used?
Among many, Gate leakage through gate dielectric calculator is widely used in real life applications like {FormulaUses}. Here are few more real life examples -
{FormulaExamplesList}
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