Gate Leakage through Gate Dielectric Solution

STEP 0: Pre-Calculation Summary
Formula Used
Gate Current = (CMOS Static Power/Base Collector Voltage)-(Subthreshold Current+Contention Current+Junction Current)
ig = (Pst/Vbc)-(ist+icon+ij)
This formula uses 6 Variables
Variables Used
Gate Current - (Measured in Ampere) - Gate Current is defined as when there is no voltage between the gate and source terminals, no current flows in the drain except leakage current, because of a very high drain-source impedance.
CMOS Static Power - (Measured in Watt) - CMOS Static Power is defined as the leakage current due to the very low static power consumption in CMOS devices.
Base Collector Voltage - (Measured in Volt) - Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state.
Subthreshold Current - (Measured in Ampere) - Subthreshold Current is subthreshold leakage through OFF transistors.
Contention Current - (Measured in Ampere) - Contention Current is defined as the contention current occuring in the ratioed circuits.
Junction Current - (Measured in Ampere) - Junction Current is junction leakage from source/drain diffusions.
STEP 1: Convert Input(s) to Base Unit
CMOS Static Power: 67.37 Milliwatt --> 0.06737 Watt (Check conversion here)
Base Collector Voltage: 2.02 Volt --> 2.02 Volt No Conversion Required
Subthreshold Current: 1.6 Milliampere --> 0.0016 Ampere (Check conversion here)
Contention Current: 25.75 Milliampere --> 0.02575 Ampere (Check conversion here)
Junction Current: 1.5 Milliampere --> 0.0015 Ampere (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
ig = (Pst/Vbc)-(ist+icon+ij) --> (0.06737/2.02)-(0.0016+0.02575+0.0015)
Evaluating ... ...
ig = 0.00450148514851485
STEP 3: Convert Result to Output's Unit
0.00450148514851485 Ampere -->4.50148514851485 Milliampere (Check conversion here)
FINAL ANSWER
4.50148514851485 4.501485 Milliampere <-- Gate Current
(Calculation completed in 00.004 seconds)

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Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat
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17 CMOS Power Metrics Calculators

Gates on Critical Path
Go Gates on Critical Path = Duty Cycle*(Off Current*(10^Base Collector Voltage))/(Capacitance of Gate to Channel*[BoltZ]*Base Collector Voltage)
Subthreshold Leakage through OFF Transistors
Go Subthreshold Current = (CMOS Static Power/Base Collector Voltage)-(Gate Current+Contention Current+Junction Current)
Contention Current in Ratioed Circuits
Go Contention Current = (CMOS Static Power/Base Collector Voltage)-(Subthreshold Current+Gate Current+Junction Current)
Gate Leakage through Gate Dielectric
Go Gate Current = (CMOS Static Power/Base Collector Voltage)-(Subthreshold Current+Contention Current+Junction Current)
Output Switching at Load Power Consumption
Go Output Switching = Capacitive Load Power Consumption/(External Load Capacitance*Supply Voltage^2*Output Signal Frequency)
Capacitive Load Power Consumption
Go Capacitive Load Power Consumption = External Load Capacitance*Supply Voltage^2*Output Signal Frequency*Output Switching
Activity Factor
Go Activity Factor = Switching Power/(Capacitance*Base Collector Voltage^2*Frequency)
Switching Power
Go Switching Power = Activity Factor*(Capacitance*Base Collector Voltage^2*Frequency)
Power Supply Rejection Ratio
Go Power Supply Rejection Ratio = 20*log10(Input Voltage Ripple/Output Voltage Ripple)
Switching Power in CMOS
Go Switching Power = (Positive Voltage^2)*Frequency*Capacitance
Switching Energy in CMOS
Go Switching Energy in CMOS = Total Energy in CMOS-Leakage Energy in CMOS
Leakage Energy in CMOS
Go Leakage Energy in CMOS = Total Energy in CMOS-Switching Energy in CMOS
Total Energy in CMOS
Go Total Energy in CMOS = Switching Energy in CMOS+Leakage Energy in CMOS
Short-Circuit Power in CMOS
Go Short-Circuit Power = Dynamic Power-Switching Power
Dynamic Power in CMOS
Go Dynamic Power = Short-Circuit Power+Switching Power
Total Power in CMOS
Go Total Power = CMOS Static Power+Dynamic Power
Static Power in CMOS
Go CMOS Static Power = Total Power-Dynamic Power

Gate Leakage through Gate Dielectric Formula

Gate Current = (CMOS Static Power/Base Collector Voltage)-(Subthreshold Current+Contention Current+Junction Current)
ig = (Pst/Vbc)-(ist+icon+ij)

Is MOSFET a current-control device?

The MOSFET, like the FET, is a voltage controlled device. A voltage input to the gate controls the flow of current from source to drain. The gate does not draw a continuous current.

How to Calculate Gate Leakage through Gate Dielectric?

Gate Leakage through Gate Dielectric calculator uses Gate Current = (CMOS Static Power/Base Collector Voltage)-(Subthreshold Current+Contention Current+Junction Current) to calculate the Gate Current, The gate leakage through gate dielectric formula is calculated when there is no voltage between the gate and source terminals, no current flows in the drain except leakage current. This is because of a very high drain-source impedance. Gate Current is denoted by ig symbol.

How to calculate Gate Leakage through Gate Dielectric using this online calculator? To use this online calculator for Gate Leakage through Gate Dielectric, enter CMOS Static Power (Pst), Base Collector Voltage (Vbc), Subthreshold Current (ist), Contention Current (icon) & Junction Current (ij) and hit the calculate button. Here is how the Gate Leakage through Gate Dielectric calculation can be explained with given input values -> 25131.49 = (0.06737/2.02)-(0.0016+0.02575+0.0015).

FAQ

What is Gate Leakage through Gate Dielectric?
The gate leakage through gate dielectric formula is calculated when there is no voltage between the gate and source terminals, no current flows in the drain except leakage current. This is because of a very high drain-source impedance and is represented as ig = (Pst/Vbc)-(ist+icon+ij) or Gate Current = (CMOS Static Power/Base Collector Voltage)-(Subthreshold Current+Contention Current+Junction Current). CMOS Static Power is defined as the leakage current due to the very low static power consumption in CMOS devices, Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state, Subthreshold Current is subthreshold leakage through OFF transistors, Contention Current is defined as the contention current occuring in the ratioed circuits & Junction Current is junction leakage from source/drain diffusions.
How to calculate Gate Leakage through Gate Dielectric?
The gate leakage through gate dielectric formula is calculated when there is no voltage between the gate and source terminals, no current flows in the drain except leakage current. This is because of a very high drain-source impedance is calculated using Gate Current = (CMOS Static Power/Base Collector Voltage)-(Subthreshold Current+Contention Current+Junction Current). To calculate Gate Leakage through Gate Dielectric, you need CMOS Static Power (Pst), Base Collector Voltage (Vbc), Subthreshold Current (ist), Contention Current (icon) & Junction Current (ij). With our tool, you need to enter the respective value for CMOS Static Power, Base Collector Voltage, Subthreshold Current, Contention Current & Junction Current and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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