Intrinsic Carrier Concentration under Non-Equilibrium Conditions Calculator

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Charge Carrier Characteristics

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✖Majority Carrier Concentration is the number of carriers in the conduction band with no externally applied bias.ⓘ Majority Carrier Concentration [n₀]			+10% -10%
✖Minority Carrier Concentration is the number of carriers in the valence band with no externally applied bias.ⓘ Minority Carrier Concentration [p₀]			+10% -10%

✖Intrinsic Carrier Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.ⓘ Intrinsic Carrier Concentration under Non-Equilibrium Conditions [n_i]

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Intrinsic Carrier Concentration under Non-Equilibrium Conditions

Formula

`"n"_{"i"} = sqrt("n"_{"0"}*"p"_{"0"})`

Example

`"1E^8/m³"=sqrt("1.1e8/m³"*"9.1e7/m³")`

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Intrinsic Carrier Concentration under Non-Equilibrium Conditions Solution

STEP 0: Pre-Calculation Summary

Formula Used

Intrinsic Carrier Concentration = sqrt(Majority Carrier Concentration*Minority Carrier Concentration)
n_i = sqrt(n₀*p₀)
This formula uses 1 Functions, 3 Variables

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)

Variables Used

Intrinsic Carrier Concentration - (Measured in 1 per Cubic Meter) - Intrinsic Carrier Concentration is the number of electrons in the conduction band or the number of holes in the valence band in intrinsic material.
Majority Carrier Concentration - (Measured in 1 per Cubic Meter) - Majority Carrier Concentration is the number of carriers in the conduction band with no externally applied bias.
Minority Carrier Concentration - (Measured in 1 per Cubic Meter) - Minority Carrier Concentration is the number of carriers in the valence band with no externally applied bias.

STEP 1: Convert Input(s) to Base Unit

Majority Carrier Concentration: 110000000 1 per Cubic Meter --> 110000000 1 per Cubic Meter No Conversion Required
Minority Carrier Concentration: 91000000 1 per Cubic Meter --> 91000000 1 per Cubic Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

n_i = sqrt(n₀*p₀) --> sqrt(110000000*91000000)

Evaluating ... ...

n_i = 100049987.506246

STEP 3: Convert Result to Output's Unit

100049987.506246 1 per Cubic Meter --> No Conversion Required

FINAL ANSWER

100049987.506246 ≈ 1E+8 1 per Cubic Meter <-- Intrinsic Carrier Concentration

(Calculation completed in 00.004 seconds)

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National Institute of Information Technology (NIIT), Neemrana

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< 16 Charge Carrier Characteristics Calculators

Intrinsic Concentration

Go Intrinsic Carrier Concentration = sqrt(Effective Density in Valence Band*Effective Density in Conduction Band)*e^((-Temperature Dependence of Energy Band Gap)/(2*[BoltZ]*Temperature))

Electrostatic Deflection Sensitivity of CRT

Go Electrostatic Deflection Sensitivity = (Distance between Deflecting Plates*Screen and Deflecting Plates Distance)/(2*Deflection of Beam*Electron Velocity)

Current Density due to Electrons

Go Electron Current Density = [Charge-e]*Electron Concentration*Mobility of Electron*Electric Field Intensity

Current Density due to Holes

Go Holes Current Density = [Charge-e]*Holes Concentration*Mobility of Holes*Electric Field Intensity

Electrons Diffusion Constant

Go Electron Diffusion Constant = Mobility of Electron*(([BoltZ]*Temperature)/[Charge-e])

Holes Diffusion Constant

Go Holes Diffusion Constant = Mobility of Holes*(([BoltZ]*Temperature)/[Charge-e])

Intrinsic Carrier Concentration under Non-Equilibrium Conditions

Go Intrinsic Carrier Concentration = sqrt(Majority Carrier Concentration*Minority Carrier Concentration)

Force on Current Element in Magnetic Field

Go Force = Current Element*Magnetic Flux Density*sin(Angle between Planes)

Velocity of Electron

Go Velocity due to Voltage = sqrt((2*[Charge-e]*Voltage)/[Mass-e])

Time Period of Electron

Go Period of Particle Circular Path = (2*3.14*[Mass-e])/(Magnetic Field Strength*[Charge-e])

Hole Diffusion Length

Go Holes Diffusion Length = sqrt(Holes Diffusion Constant*Hole Carrier Lifetime)

Conductivity in Metals

Go Conductivity = Electron Concentration*[Charge-e]*Mobility of Electron

Velocity of Electron in Force Fields

Go Velocity of Electron in Force Fields = Electric Field Intensity/Magnetic Field Strength

Thermal Voltage

Go Thermal Voltage = [BoltZ]*Temperature/[Charge-e]

Thermal Voltage using Einstein's Equation

Go Thermal Voltage = Electron Diffusion Constant/Mobility of Electron

Convection Current Density

Go Convection Current Density = Charge Density*Charge Velocity

Intrinsic Carrier Concentration under Non-Equilibrium Conditions Formula

Intrinsic Carrier Concentration = sqrt(Majority Carrier Concentration*Minority Carrier Concentration)
n_i = sqrt(n₀*p₀)

Define equilibrium carrier concentration?

The number of carriers in the conduction and valence band with no externally applied bias is called the equilibrium carrier concentration. For majority carriers, the equilibrium carrier concentration is equal to the intrinsic carrier concentration plus the number of free carriers added by doping the semiconductor. Under most conditions, the doping of the semiconductor is several orders of magnitude greater than the intrinsic carrier concentration, such that the number of majority carriers is approximately equal to the doping.
At equilibrium, the product of the majority and minority carrier concentration is a constant.

How to Calculate Intrinsic Carrier Concentration under Non-Equilibrium Conditions?

Intrinsic Carrier Concentration under Non-Equilibrium Conditions calculator uses Intrinsic Carrier Concentration = sqrt(Majority Carrier Concentration*Minority Carrier Concentration) to calculate the Intrinsic Carrier Concentration, Intrinsic carrier concentration under Non-Equilibrium Conditions is often used in the analysis of semiconductor devices, particularly when considering deviations from thermal equilibrium. It's based on the general concept of quasi-Fermi levels, which are effective energy levels that describe the distribution of electrons and holes in non-equilibrium conditions. Intrinsic Carrier Concentration is denoted by n_i symbol.

How to calculate Intrinsic Carrier Concentration under Non-Equilibrium Conditions using this online calculator? To use this online calculator for Intrinsic Carrier Concentration under Non-Equilibrium Conditions, enter Majority Carrier Concentration (n₀) & Minority Carrier Concentration (p₀) and hit the calculate button. Here is how the Intrinsic Carrier Concentration under Non-Equilibrium Conditions calculation can be explained with given input values -> 1E+8 = sqrt(110000000*91000000).

FAQ

What is Intrinsic Carrier Concentration under Non-Equilibrium Conditions?

Intrinsic carrier concentration under Non-Equilibrium Conditions is often used in the analysis of semiconductor devices, particularly when considering deviations from thermal equilibrium. It's based on the general concept of quasi-Fermi levels, which are effective energy levels that describe the distribution of electrons and holes in non-equilibrium conditions and is represented as n_i = sqrt(n₀*p₀) or Intrinsic Carrier Concentration = sqrt(Majority Carrier Concentration*Minority Carrier Concentration). Majority Carrier Concentration is the number of carriers in the conduction band with no externally applied bias & Minority Carrier Concentration is the number of carriers in the valence band with no externally applied bias.

How to calculate Intrinsic Carrier Concentration under Non-Equilibrium Conditions?

Intrinsic carrier concentration under Non-Equilibrium Conditions is often used in the analysis of semiconductor devices, particularly when considering deviations from thermal equilibrium. It's based on the general concept of quasi-Fermi levels, which are effective energy levels that describe the distribution of electrons and holes in non-equilibrium conditions is calculated using Intrinsic Carrier Concentration = sqrt(Majority Carrier Concentration*Minority Carrier Concentration). To calculate Intrinsic Carrier Concentration under Non-Equilibrium Conditions, you need Majority Carrier Concentration (n₀) & Minority Carrier Concentration (p₀). With our tool, you need to enter the respective value for Majority Carrier Concentration & Minority Carrier Concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

How many ways are there to calculate Intrinsic Carrier Concentration?

In this formula, Intrinsic Carrier Concentration uses Majority Carrier Concentration & Minority Carrier Concentration. We can use 1 other way(s) to calculate the same, which is/are as follows -

Intrinsic Carrier Concentration = sqrt(Effective Density in Valence Band*Effective Density in Conduction Band)*e^((-Temperature Dependence of Energy Band Gap)/(2*[BoltZ]*Temperature))

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