Junction Capacitance of Photodiode Calculator

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C-V Actions of Optics Transmission

Fiber Optic Parameters

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✖Permittivity of Semiconductor refers to it's ability to permit electric field. It is a material property that characterizes how the semiconductor responds to an electric field.ⓘ Permittivity of Semiconductor [ε_r]			+10% -10%
✖Junction Area is the cross-sectional area of the depletion region, usually perpendicular to the direction of current flow.ⓘ Junction Area [A_j]			+10% -10%
✖The depletion Layer Width is the distance across the region near the p-n junction where mobile charge carriers (electrons and holes) have been significantly depleted or removed.ⓘ Depletion Layer Width [w]			+10% -10%

✖Junction Capacitance is the capacitance associated with the depletion region of a semiconductor device, like a diode or transistor.ⓘ Junction Capacitance of Photodiode [C_j]

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Junction Capacitance of Photodiode

Formula

`"C"_{"j"} = "ε"_{"r"}*"A"_{"j"}/"w"`

Example

`"11.18F"="11.7F/m"*"8.6m²"/"9m"`

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Junction Capacitance of Photodiode Solution

STEP 0: Pre-Calculation Summary

Formula Used

Junction Capacitance = Permittivity of Semiconductor*Junction Area/Depletion Layer Width
C_j = ε_r*A_j/w
This formula uses 4 Variables

Variables Used

Junction Capacitance - (Measured in Farad) - Junction Capacitance is the capacitance associated with the depletion region of a semiconductor device, like a diode or transistor.
Permittivity of Semiconductor - (Measured in Farad per Meter) - Permittivity of Semiconductor refers to it's ability to permit electric field. It is a material property that characterizes how the semiconductor responds to an electric field.
Junction Area - (Measured in Square Meter) - Junction Area is the cross-sectional area of the depletion region, usually perpendicular to the direction of current flow.
Depletion Layer Width - (Measured in Meter) - The depletion Layer Width is the distance across the region near the p-n junction where mobile charge carriers (electrons and holes) have been significantly depleted or removed.

STEP 1: Convert Input(s) to Base Unit

Permittivity of Semiconductor: 11.7 Farad per Meter --> 11.7 Farad per Meter No Conversion Required
Junction Area: 8.6 Square Meter --> 8.6 Square Meter No Conversion Required
Depletion Layer Width: 9 Meter --> 9 Meter No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

C_j = ε_r*A_j/w --> 11.7*8.6/9

Evaluating ... ...

C_j = 11.18

STEP 3: Convert Result to Output's Unit

11.18 Farad --> No Conversion Required

FINAL ANSWER

11.18 Farad <-- Junction Capacitance

(Calculation completed in 00.004 seconds)

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Created by Gowthaman N

Vellore Institute of Technology (VIT University), Chennai

Gowthaman N has created this Calculator and 25+ more calculators!

Verified by Parminder Singh

Chandigarh University (CU), Punjab

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< 17 C-V Actions of Optics Transmission Calculators

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Go Passband Ripple = ((1+sqrt(Resistance 1*Resistance 2)*Single Pass Gain)/(1-sqrt(Resistance 1*Resistance 2)*Single Pass Gain))^2

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Go Noise Figure = 10*log10(ASE Noise Power/(Single Pass Gain*[hP]*Frequency Of Incident Light*Post Detection Bandwidth))

Output Photo Current

Go Photocurrent = Quantum Efficiency*Incident Optical Power*[Charge-e]/([hP]*Frequency Of Incident Light)

Peak Parametric Gain

Go Peak Parametric Gain = 10*log10(0.25*exp(2*Fiber Non Linear Coefficient*Pump Signal Power*Fiber Length))

Responsivity with reference of Wavelength

Go Responsivity of Photodetector = (Quantum Efficiency*[Charge-e]*Wavelength of Light)/([hP]*[c])

Total Shot Noise

Go Total Shot Noise = sqrt(2*[Charge-e]*Post Detection Bandwidth*(Photocurrent+Dark Current))

Responsivity in relation to Photon Energy

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Thermal Noise Current

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Gain Coefficient

Go Net Gain Coefficient Per Unit Length = Optical Confinement Factor*Material Gain Coefficient-Effective Loss Coefficient

Junction Capacitance of Photodiode

Go Junction Capacitance = Permittivity of Semiconductor*Junction Area/Depletion Layer Width

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Go Dark Current Noise = 2*Post Detection Bandwidth*[Charge-e]*Dark Current

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Optical Gain of Phototransistor

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PhotoConductive Gain

Go PhotoConductive Gain = Slow Carrier Transit Time/Fast Carrier Transit Time

Responsivity of Photodetector

Go Responsivity of Photodetector = Photocurrent/Incident Power

Junction Capacitance of Photodiode Formula

Junction Capacitance = Permittivity of Semiconductor*Junction Area/Depletion Layer Width
C_j = ε_r*A_j/w

How does increasing the depletion width affect the junction capacitance?

An increase in the depletion width decreases the junction capacitance . A wider depletion region reduces the ability to store charge, resulting in lower capacitance.

How to Calculate Junction Capacitance of Photodiode?

Junction Capacitance of Photodiode calculator uses Junction Capacitance = Permittivity of Semiconductor*Junction Area/Depletion Layer Width to calculate the Junction Capacitance, The Junction Capacitance of Photodiode is the measure of the ability of a semiconductor device's junction, such as a diode or transistor, to store electrical charge. It arises from the depletion region formed within the semiconductor due to the difference in charge carrier concentrations on either side of the junction. Junction Capacitance is denoted by C_j symbol.

How to calculate Junction Capacitance of Photodiode using this online calculator? To use this online calculator for Junction Capacitance of Photodiode, enter Permittivity of Semiconductor (ε_r), Junction Area (A_j) & Depletion Layer Width (w) and hit the calculate button. Here is how the Junction Capacitance of Photodiode calculation can be explained with given input values -> 11.18 = 11.7*8.6/9.

FAQ

What is Junction Capacitance of Photodiode?

The Junction Capacitance of Photodiode is the measure of the ability of a semiconductor device's junction, such as a diode or transistor, to store electrical charge. It arises from the depletion region formed within the semiconductor due to the difference in charge carrier concentrations on either side of the junction and is represented as C_j = ε_r*A_j/w or Junction Capacitance = Permittivity of Semiconductor*Junction Area/Depletion Layer Width. Permittivity of Semiconductor refers to it's ability to permit electric field. It is a material property that characterizes how the semiconductor responds to an electric field, Junction Area is the cross-sectional area of the depletion region, usually perpendicular to the direction of current flow & The depletion Layer Width is the distance across the region near the p-n junction where mobile charge carriers (electrons and holes) have been significantly depleted or removed.

How to calculate Junction Capacitance of Photodiode?

The Junction Capacitance of Photodiode is the measure of the ability of a semiconductor device's junction, such as a diode or transistor, to store electrical charge. It arises from the depletion region formed within the semiconductor due to the difference in charge carrier concentrations on either side of the junction is calculated using Junction Capacitance = Permittivity of Semiconductor*Junction Area/Depletion Layer Width. To calculate Junction Capacitance of Photodiode, you need Permittivity of Semiconductor (ε_r), Junction Area (A_j) & Depletion Layer Width (w). With our tool, you need to enter the respective value for Permittivity of Semiconductor, Junction Area & Depletion Layer Width and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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