Junction Current Calculator

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VLSI Material Optimization

Analog VLSI Design

✖Static Power is defined as the leakage current due to the very low static power consumption in CMOS devices.ⓘ Static Power [P_st]			+10% -10%
✖Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state.ⓘ Base Collector Voltage [V_bc]			+10% -10%
✖Sub Threshold Current is subthreshold leakage through OFF transistors.ⓘ Sub Threshold Current [i_st]			+10% -10%
✖Contention Current is defined as the contention current occuring in the ratioed circuits.ⓘ Contention Current [i_con]			+10% -10%
✖Gate Current is defined as when there is no voltage between the gate and source terminals, no current flows in the drain except leakage current, because of a very high drain-source impedance.ⓘ Gate Current [i_g]			+10% -10%

✖Junction Current is junction leakage from source/drain diffusions.ⓘ Junction Current [i_j]

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Formula

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Junction Current

Formula

`"i"_{"j"} = ("P"_{"st"}/"V"_{"bc"})-("i"_{"st"}+"i"_{"con"}+"i"_{"g"}) `

Example

`"134.8167mA"=("0.37W"/"2.22V")-("1.6mA"+"25.75mA"+"4.5mA") `

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Junction Current Solution

STEP 0: Pre-Calculation Summary

Formula Used

Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)
i_j = (P_st/V_bc)-(i_st+i_con+i_g)
This formula uses 6 Variables

Variables Used

Junction Current - (Measured in Ampere) - Junction Current is junction leakage from source/drain diffusions.
Static Power - (Measured in Watt) - Static Power is defined as the leakage current due to the very low static power consumption in CMOS devices.
Base Collector Voltage - (Measured in Volt) - Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state.
Sub Threshold Current - (Measured in Ampere) - Sub Threshold Current is subthreshold leakage through OFF transistors.
Contention Current - (Measured in Ampere) - Contention Current is defined as the contention current occuring in the ratioed circuits.
Gate Current - (Measured in Ampere) - Gate Current is defined as when there is no voltage between the gate and source terminals, no current flows in the drain except leakage current, because of a very high drain-source impedance.

STEP 1: Convert Input(s) to Base Unit

Static Power: 0.37 Watt --> 0.37 Watt No Conversion Required
Base Collector Voltage: 2.22 Volt --> 2.22 Volt No Conversion Required
Sub Threshold Current: 1.6 Milliampere --> 0.0016 Ampere (Check conversion here)
Contention Current: 25.75 Milliampere --> 0.02575 Ampere (Check conversion here)
Gate Current: 4.5 Milliampere --> 0.0045 Ampere (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

i_j = (P_st/V_bc)-(i_st+i_con+i_g) --> (0.37/2.22)-(0.0016+0.02575+0.0045)

Evaluating ... ...

i_j = 0.134816666666667

STEP 3: Convert Result to Output's Unit

0.134816666666667 Ampere -->134.816666666667 Milliampere (Check conversion here)

FINAL ANSWER

134.816666666667 ≈ 134.8167 Milliampere <-- Junction Current

(Calculation completed in 00.020 seconds)

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Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

Shobhit Dimri has created this Calculator and 900+ more calculators!

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< 25 VLSI Material Optimization Calculators

Bulk Depletion Region Charge Density VLSI

Go Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))

Body Effect Coefficient

Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))

Junction Built-in Voltage VLSI

Go Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)

PN Junction Depletion Depth with Source VLSI

Go P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))

Total Source Parasitic Capacitance

Go Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)

Short Channel Saturation Current VLSI

Go Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage

Junction Current

Go Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)

Surface Potential

Go Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)

Threshold Voltage when Source is at Body Potential

Go Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage

DIBL Coefficient

Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential

Threshold Voltage

Go Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)

Gate Capacitance

Go Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)

Subthreshold Slope

Go Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)

Channel Charge

Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

Gate Length using Gate Oxide Capacitance

Go Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)

Gate Oxide Capacitance

Go Capacitance of Gate Oxide Layer = Gate Capacitance/(Gate Width*Gate Length)

Oxide Capacitance after Full Scaling VLSI

Go Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor

Critical Voltage

Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

Gate Oxide Thickness after Full Scaling VLSI

Go Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor

Intrinsic Gate Capacitance

Go MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width

Channel Length after Full Scaling VLSI

Go Channel Length after Full Scaling = Channel Length/Scaling Factor

Junction Depth after Full Scaling VLSI

Go Junction Depth after Full Scaling = Junction Depth/Scaling Factor

Channel Width after Full Scaling VLSI

Go Channel Width after Full Scaling = Channel Width/Scaling Factor

Mobility in Mosfet

Go Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer

K-Prime

Go K Prime = Mobility in MOSFET*Capacitance of Gate Oxide Layer

Junction Current Formula

Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)
i_j = (P_st/V_bc)-(i_st+i_con+i_g)

Is MOSFET a current-control device?

The MOSFET, like the FET, is a voltage controlled device. A voltage input to the gate controls the flow of current from source to drain. The gate does not draw a continuous current.

How to Calculate Junction Current?

Junction Current calculator uses Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current) to calculate the Junction Current, The Junction Current formula is defined as the flow of electrons from the n-side towards the p-side of the junction takes place when there is an increase in the voltage. Junction Current is denoted by i_j symbol.

How to calculate Junction Current using this online calculator? To use this online calculator for Junction Current, enter Static Power (P_st), Base Collector Voltage (V_bc), Sub Threshold Current (i_st), Contention Current (i_con) & Gate Current (i_g) and hit the calculate button. Here is how the Junction Current calculation can be explained with given input values -> 134816.7 = (0.37/2.22)-(0.0016+0.02575+0.0045) .

FAQ

What is Junction Current?

The Junction Current formula is defined as the flow of electrons from the n-side towards the p-side of the junction takes place when there is an increase in the voltage and is represented as i_j = (P_st/V_bc)-(i_st+i_con+i_g) or Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current). Static Power is defined as the leakage current due to the very low static power consumption in CMOS devices, Base Collector Voltage is a crucial parameter in transistor biasing. It refers to the voltage difference between the base and collector terminals of the transistor when it is in its active state, Sub Threshold Current is subthreshold leakage through OFF transistors, Contention Current is defined as the contention current occuring in the ratioed circuits & Gate Current is defined as when there is no voltage between the gate and source terminals, no current flows in the drain except leakage current, because of a very high drain-source impedance.

How to calculate Junction Current?

The Junction Current formula is defined as the flow of electrons from the n-side towards the p-side of the junction takes place when there is an increase in the voltage is calculated using Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current). To calculate Junction Current, you need Static Power (P_st), Base Collector Voltage (V_bc), Sub Threshold Current (i_st), Contention Current (i_con) & Gate Current (i_g). With our tool, you need to enter the respective value for Static Power, Base Collector Voltage, Sub Threshold Current, Contention Current & Gate Current and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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