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Overdrive voltage of PMOS Calculator

Category Engineering ↺
Engineering Electrical ↺
Electrical Microelectronic Circuits ↺
Microelectronic-Circuits MOS Field-Effect Transistors (MOSFETs) ↺
Mos-Field-Effect-Transistors-(Mosfets) P-channel enhancement-type MOSFET ↺
✖Voltage across the oxide due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide.ⓘ Voltage across the oxide [VGS ]
+10%
-10%
✖Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals. It is an important factor to maintain power efficiency.ⓘ Threshold voltage [VT]
+10%
-10%
✖Effective voltage or overdrive voltage is excess of voltage across oxide over thermal voltage is termedⓘ Overdrive voltage of PMOS [Vov]
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Payal Priya
Birsa Institute of Technology (BIT), Sindri
Payal Priya has created this Calculator and 300+ more calculators!
Urvi Rathod
Vishwakarma Government Engineering College (VGEC), Ahmedabad
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11 Other formulas that you can solve using the same Inputs

Current entering drain terminal of MOSFET when Vgs is given
Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)*(Voltage between drain and source-(1/2*(Voltage between drain and source^2))) GO
Conductance of channel of MOSFET when Vgs is given
Conductance of channel=Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-Threshold voltage) GO
Current flowing through the induced channel in the transistor when Vgs is given
output current =(Mobility of electron*Oxide Capacitance*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage))*Saturation voltage between drain and source GO
MOSFET as linear resistance when Vgs is given
MOSFET as linear resistance=Length of the Channel/((Mobility of electrons at the surface of channel*Oxide Capacitance*Width of the Channel)*(Voltage across the oxide-Threshold voltage)) GO
Drain current
Drain current=Mobility of electron*Gate oxide capacitance per unit area*(Gate width/Gate length)*(Gate to source voltage-Threshold voltage)*Saturation voltage between drain and source GO
Conductance of channel of MOSFETs
Conductance of channel=Mobility of electrons at the surface of channel*Oxide Capacitance*(Width of the Channel/Length of the Channel)*Voltage across the oxide GO
Saturation voltage of MOSFET
Saturation voltage between drain and source=Voltage across the oxide-Threshold voltage GO
Saturation voltage between drain and source
Saturation voltage between drain and source=Gate to source voltage-Threshold voltage GO
Effective voltage of MOSFET
Effective voltage or overdrive voltage=Voltage across the oxide-Threshold voltage GO
Overdrive Voltage of MOSFET
Effective voltage or overdrive voltage=Voltage across the oxide-Threshold voltage GO
Saturation drain current
Saturation drain current=[BoltZ]*((Gate to source voltage-Threshold voltage)^2) GO

4 Other formulas that calculate the same Output

Overdrive voltage when MOSFET acts as an amplifier in terms of load resistance
Effective voltage or overdrive voltage=(sqrt(2*MOSFET transconductance parameter*Load Resistance*Supply Voltage+1)-1)/Process transconductance parameter*Load Resistance GO
Overdrive voltage when MOSFET acts as an amplifier
Effective voltage or overdrive voltage=modulus(Voltage across the oxide)-Threshold voltage GO
Effective voltage of MOSFET
Effective voltage or overdrive voltage=Voltage across the oxide-Threshold voltage GO
Overdrive Voltage of MOSFET
Effective voltage or overdrive voltage=Voltage across the oxide-Threshold voltage GO

Overdrive voltage of PMOS Formula

Effective voltage or overdrive voltage=Voltage across the oxide-modulus(Threshold voltage)
V<sub>ov</sub>=V<sub>GS</sub> -modulus(V<sub>T</sub>)
More formulas
Transistor transconductance parameter of PMOS GO
Drain current in triode region of PMOS transistor GO
Drain current in triode region of PMOS transistor when V<sub>SD</sub> is given GO
Drain current in the saturation region of PMOS transistor GO
Drain current in the saturation region of PMOS transistor when V<sub>ov</sub> is given GO
Overall drain current of PMOS transistor GO

Why is threshold voltage negative in PMOS?

Typically, threshold voltage is the Vgs voltage required to start forming the channel referred to as channel inversion. In case of PMOS, the bulk/substrate and the source terminals are connected to Vdd. With reference to the source terminal, if you start reducing your gate voltage from Vdd (exactly opposite to NMOS where you start your gate voltage from zero) to a point where you observe the channel inversion, at this point if you calculate Vgs and source being at the higher potential, you get a negative value. This is why you have a negative value of Vth for a PMOS. With a similar argument, you will see that NMOS will have a positive Vth.

How to Calculate Overdrive voltage of PMOS?

Overdrive voltage of PMOS calculator uses Effective voltage or overdrive voltage=Voltage across the oxide-modulus(Threshold voltage) to calculate the Effective voltage or overdrive voltage, The Overdrive voltage of PMOS formula is defined as the voltage between transistor gate and source (VGS) in excess of the threshold voltage (VTH) where VTH is defined as the minimum voltage required between gate and source to turn the transistor on (allow it to conduct electricity). Effective voltage or overdrive voltage and is denoted by Vov symbol.

How to calculate Overdrive voltage of PMOS using this online calculator? To use this online calculator for Overdrive voltage of PMOS, enter Voltage across the oxide (VGS ) and Threshold voltage (VT) and hit the calculate button. Here is how the Overdrive voltage of PMOS calculation can be explained with given input values -> -48 = 2-modulus(50).

FAQ

What is Overdrive voltage of PMOS?
The Overdrive voltage of PMOS formula is defined as the voltage between transistor gate and source (VGS) in excess of the threshold voltage (VTH) where VTH is defined as the minimum voltage required between gate and source to turn the transistor on (allow it to conduct electricity) and is represented as Vov=VGS -modulus(VT) or Effective voltage or overdrive voltage=Voltage across the oxide-modulus(Threshold voltage). Voltage across the oxide due to the charge at the oxide-semiconductor interface and the third term is due to the charge density in the oxide and Threshold voltage of transistor is the minimum gate to source voltage that is needed to create a conducting path between the source and drain terminals. It is an important factor to maintain power efficiency.
How to calculate Overdrive voltage of PMOS?
The Overdrive voltage of PMOS formula is defined as the voltage between transistor gate and source (VGS) in excess of the threshold voltage (VTH) where VTH is defined as the minimum voltage required between gate and source to turn the transistor on (allow it to conduct electricity) is calculated using Effective voltage or overdrive voltage=Voltage across the oxide-modulus(Threshold voltage). To calculate Overdrive voltage of PMOS, you need Voltage across the oxide (VGS ) and Threshold voltage (VT). With our tool, you need to enter the respective value for Voltage across the oxide and Threshold voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate Effective voltage or overdrive voltage?
In this formula, Effective voltage or overdrive voltage uses Voltage across the oxide and Threshold voltage. We can use 4 other way(s) to calculate the same, which is/are as follows -
  • Effective voltage or overdrive voltage=Voltage across the oxide-Threshold voltage
  • Effective voltage or overdrive voltage=Voltage across the oxide-Threshold voltage
  • Effective voltage or overdrive voltage=modulus(Voltage across the oxide)-Threshold voltage
  • Effective voltage or overdrive voltage=(sqrt(2*MOSFET transconductance parameter*Load Resistance*Supply Voltage+1)-1)/Process transconductance parameter*Load Resistance
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