Overdrive Voltage of PMOS Calculator

✖The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET.ⓘ Voltage between Gate and Source [V_GS]			+10% -10%
✖Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.ⓘ Threshold Voltage [V_T]			+10% -10%

✖Effective voltage is the equivalent DC voltage that would produce the same amount of power dissipation in a resistive load as the AC voltage being measured.ⓘ Overdrive Voltage of PMOS [V_ov]

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Formula

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Overdrive Voltage of PMOS

Formula

`"V"_{"ov"} = "V"_{"GS"}-"modulus"("V"_{"T"})`

Example

`"2.16V"="2.86V"-"modulus"("0.7V")`

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Overdrive Voltage of PMOS Solution

STEP 0: Pre-Calculation Summary

Formula Used

Effective Voltage = Voltage between Gate and Source-modulus(Threshold Voltage)
V_ov = V_GS-modulus(V_T)
This formula uses 1 Functions, 3 Variables

Functions Used

modulus - Modulus of a number is the remainder when that number is divided by another number., modulus

Variables Used

Effective Voltage - (Measured in Volt) - Effective voltage is the equivalent DC voltage that would produce the same amount of power dissipation in a resistive load as the AC voltage being measured.
Voltage between Gate and Source - (Measured in Volt) - The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET.
Threshold Voltage - (Measured in Volt) - Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

STEP 1: Convert Input(s) to Base Unit

Voltage between Gate and Source: 2.86 Volt --> 2.86 Volt No Conversion Required
Threshold Voltage: 0.7 Volt --> 0.7 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

V_ov = V_GS-modulus(V_T) --> 2.86-modulus(0.7)

Evaluating ... ...

V_ov = 2.16

STEP 3: Convert Result to Output's Unit

2.16 Volt --> No Conversion Required

FINAL ANSWER

2.16 Volt <-- Effective Voltage

(Calculation completed in 00.004 seconds)

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Created by Payal Priya

Birsa Institute of Technology (BIT), Sindri

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Vishwakarma Government Engineering College (VGEC), Ahmedabad

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< 14 P-Channel Enhancement Calculators

Overall Drain Current of PMOS Transistor

Go Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2*(1+Voltage between Drain and Source/modulus(Early Voltage))

Drain Current in Triode Region of PMOS Transistor

Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2)

Body Effect in PMOS

Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))

Drain Current in Triode Region of PMOS Transistor given Vsd

Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source

Drain Current in Saturation Region of PMOS Transistor

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2

Backgate Effect Parameter in PMOS

Go Backgate Effect Parameter = sqrt(2*[Permitivity-vacuum]*[Charge-e]*Donor Concentration)/Oxide Capacitance

Drain Current from Source to Drain

Go Drain Current = (Width of Junction*Inversion Layer Charge*Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel)

Inversion Layer Charge at Pinch-Off Condition in PMOS

Go Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage-Voltage between Drain and Source)

Drain Current in Saturation Region of PMOS Transistor given Vov

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2

Inversion Layer Charge in PMOS

Go Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage)

Current in Inversion Channel of PMOS

Go Drain Current = (Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion)

Current in Inversion Channel of PMOS given Mobility

Go Drift Velocity of Inversion = Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel

Overdrive Voltage of PMOS

Go Effective Voltage = Voltage between Gate and Source-modulus(Threshold Voltage)

Process Transconductance Parameter of PMOS

Go Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance

Overdrive Voltage of PMOS Formula

Effective Voltage = Voltage between Gate and Source-modulus(Threshold Voltage)
V_ov = V_GS-modulus(V_T)

Why is threshold voltage negative in PMOS?

Typically, threshold voltage is the Vgs voltage required to start forming the channel referred to as channel inversion. In case of PMOS, the bulk/substrate and the source terminals are connected to Vdd. With reference to the source terminal, if you start reducing your gate voltage from Vdd (exactly opposite to NMOS where you start your gate voltage from zero) to a point where you observe the channel inversion, at this point if you calculate Vgs and source being at the higher potential, you get a negative value. This is why you have a negative value of Vth for a PMOS. With a similar argument, you will see that NMOS will have a positive Vth.

How to Calculate Overdrive Voltage of PMOS?

Overdrive Voltage of PMOS calculator uses Effective Voltage = Voltage between Gate and Source-modulus(Threshold Voltage) to calculate the Effective Voltage, The Overdrive voltage of PMOS formula is defined as the voltage between transistor gate and source (V_GS) in excess of the threshold voltage (V_TH) where V_TH is defined as the minimum voltage required between gate and source to turn the transistor on (allow it to conduct electricity). Effective Voltage is denoted by V_ov symbol.

How to calculate Overdrive Voltage of PMOS using this online calculator? To use this online calculator for Overdrive Voltage of PMOS, enter Voltage between Gate and Source (V_GS) & Threshold Voltage (V_T) and hit the calculate button. Here is how the Overdrive Voltage of PMOS calculation can be explained with given input values -> 2.16 = 2.86-modulus(0.7).

FAQ

What is Overdrive Voltage of PMOS?

The Overdrive voltage of PMOS formula is defined as the voltage between transistor gate and source (V_GS) in excess of the threshold voltage (V_TH) where V_TH is defined as the minimum voltage required between gate and source to turn the transistor on (allow it to conduct electricity) and is represented as V_ov = V_GS-modulus(V_T) or Effective Voltage = Voltage between Gate and Source-modulus(Threshold Voltage). The voltage between gate and source of a field-effect transistor (FET) is known as the gate-source voltage (VGS). It is an important parameter that affects the operation of the FET & Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

How to calculate Overdrive Voltage of PMOS?

The Overdrive voltage of PMOS formula is defined as the voltage between transistor gate and source (V_GS) in excess of the threshold voltage (V_TH) where V_TH is defined as the minimum voltage required between gate and source to turn the transistor on (allow it to conduct electricity) is calculated using Effective Voltage = Voltage between Gate and Source-modulus(Threshold Voltage). To calculate Overdrive Voltage of PMOS, you need Voltage between Gate and Source (V_GS) & Threshold Voltage (V_T). With our tool, you need to enter the respective value for Voltage between Gate and Source & Threshold Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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