Oxide Capacitance after Voltage Scaling VLSI Solution

STEP 0: Pre-Calculation Summary
Formula Used
Oxide capacitance after voltage scaling = Scaling Factor*Oxide Capacitance per Unit Area
Cox(vs)' = Sf*Coxide
This formula uses 3 Variables
Variables Used
Oxide capacitance after voltage scaling - (Measured in Farad per Square Meter) - Oxide capacitance after voltage scaling is refers to the capacitance associated with the oxide layer between the metal gate and the substrate after the device is scaled down by voltage scaling.
Scaling Factor - Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.
Oxide Capacitance per Unit Area - (Measured in Farad per Square Meter) - Oxide Capacitance per Unit Area is defined as the capacitance per unit area of the insulating oxide layer that separates the metal gate from the semiconductor material.
STEP 1: Convert Input(s) to Base Unit
Scaling Factor: 1.5 --> No Conversion Required
Oxide Capacitance per Unit Area: 0.0703 Microfarad per Square Centimeter --> 0.000703 Farad per Square Meter (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Cox(vs)' = Sf*Coxide --> 1.5*0.000703
Evaluating ... ...
Cox(vs)' = 0.0010545
STEP 3: Convert Result to Output's Unit
0.0010545 Farad per Square Meter -->105.45 Nanofarad per Square Centimeter (Check conversion here)
FINAL ANSWER
105.45 Nanofarad per Square Centimeter <-- Oxide capacitance after voltage scaling
(Calculation completed in 00.004 seconds)

Credits

Created by Priyanka Patel
Lalbhai Dalpatbhai College of engineering (LDCE), Ahmedabad
Priyanka Patel has created this Calculator and 25+ more calculators!
Verified by Santhosh Yadav
Dayananda Sagar College Of Engineering (DSCE), Banglore
Santhosh Yadav has verified this Calculator and 50+ more calculators!

25 VLSI Material Optimization Calculators

Bulk Depletion Region Charge Density VLSI
Go Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))
Body Effect Coefficient
Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))
Junction Built-in Voltage VLSI
Go Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)
PN Junction Depletion Depth with Source VLSI
Go P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))
Total Source Parasitic Capacitance
Go Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)
Short Channel Saturation Current VLSI
Go Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage
Junction Current
Go Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)
Surface Potential
Go Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)
Threshold Voltage when Source is at Body Potential
Go Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage
DIBL Coefficient
Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential
Threshold Voltage
Go Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)
Gate Capacitance
Go Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)
Subthreshold Slope
Go Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)
Channel Charge
Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)
Gate Length using Gate Oxide Capacitance
Go Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)
Gate Oxide Capacitance
Go Capacitance of Gate Oxide Layer = Gate Capacitance/(Gate Width*Gate Length)
Oxide Capacitance after Full Scaling VLSI
Go Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor
Critical Voltage
Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length
Gate Oxide Thickness after Full Scaling VLSI
Go Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor
Intrinsic Gate Capacitance
Go MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width
Channel Length after Full Scaling VLSI
Go Channel Length after Full Scaling = Channel Length/Scaling Factor
Junction Depth after Full Scaling VLSI
Go Junction Depth after Full Scaling = Junction Depth/Scaling Factor
Channel Width after Full Scaling VLSI
Go Channel Width after Full Scaling = Channel Width/Scaling Factor
Mobility in Mosfet
Go Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer
K-Prime
Go K Prime = Mobility in MOSFET*Capacitance of Gate Oxide Layer

Oxide Capacitance after Voltage Scaling VLSI Formula

Oxide capacitance after voltage scaling = Scaling Factor*Oxide Capacitance per Unit Area
Cox(vs)' = Sf*Coxide

How does oxide capacitance impact the performance of MOSFETs in high-frequency applications?

In high-frequency applications, such as RF (radio frequency) circuits and high-speed digital circuits, oxide capacitance in MOSFETs plays a crucial role in determining the device's performance. The oxide capacitance affects the speed at which the transistor can switch states, as well as its ability to maintain signal integrity at higher frequencies.

How to Calculate Oxide Capacitance after Voltage Scaling VLSI?

Oxide Capacitance after Voltage Scaling VLSI calculator uses Oxide capacitance after voltage scaling = Scaling Factor*Oxide Capacitance per Unit Area to calculate the Oxide capacitance after voltage scaling, The Oxide Capacitance after Voltage Scaling VLSI formula is defined as the capacitance associated with the oxide layer between the metal gate and the substrate after the device is scaled down by voltage scaling. Oxide capacitance after voltage scaling is denoted by Cox(vs)' symbol.

How to calculate Oxide Capacitance after Voltage Scaling VLSI using this online calculator? To use this online calculator for Oxide Capacitance after Voltage Scaling VLSI, enter Scaling Factor (Sf) & Oxide Capacitance per Unit Area (Coxide) and hit the calculate button. Here is how the Oxide Capacitance after Voltage Scaling VLSI calculation can be explained with given input values -> 1.1E+7 = 1.5*0.000703.

FAQ

What is Oxide Capacitance after Voltage Scaling VLSI?
The Oxide Capacitance after Voltage Scaling VLSI formula is defined as the capacitance associated with the oxide layer between the metal gate and the substrate after the device is scaled down by voltage scaling and is represented as Cox(vs)' = Sf*Coxide or Oxide capacitance after voltage scaling = Scaling Factor*Oxide Capacitance per Unit Area. Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process & Oxide Capacitance per Unit Area is defined as the capacitance per unit area of the insulating oxide layer that separates the metal gate from the semiconductor material.
How to calculate Oxide Capacitance after Voltage Scaling VLSI?
The Oxide Capacitance after Voltage Scaling VLSI formula is defined as the capacitance associated with the oxide layer between the metal gate and the substrate after the device is scaled down by voltage scaling is calculated using Oxide capacitance after voltage scaling = Scaling Factor*Oxide Capacitance per Unit Area. To calculate Oxide Capacitance after Voltage Scaling VLSI, you need Scaling Factor (Sf) & Oxide Capacitance per Unit Area (Coxide). With our tool, you need to enter the respective value for Scaling Factor & Oxide Capacitance per Unit Area and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
Let Others Know
Facebook
Twitter
Reddit
LinkedIn
Email
WhatsApp
Copied!