## Oxide Capacitance after Voltage Scaling VLSI Solution

STEP 0: Pre-Calculation Summary
Formula Used
Oxide capacitance after voltage scaling = Scaling Factor*Oxide Capacitance per Unit Area
Cox(vs)' = Sf*Coxide
This formula uses 3 Variables
Variables Used
Oxide capacitance after voltage scaling - (Measured in Farad per Square Meter) - Oxide capacitance after voltage scaling is refers to the capacitance associated with the oxide layer between the metal gate and the substrate after the device is scaled down by voltage scaling.
Scaling Factor - Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.
Oxide Capacitance per Unit Area - (Measured in Farad per Square Meter) - Oxide Capacitance per Unit Area is defined as the capacitance per unit area of the insulating oxide layer that separates the metal gate from the semiconductor material.
STEP 1: Convert Input(s) to Base Unit
Scaling Factor: 1.5 --> No Conversion Required
Oxide Capacitance per Unit Area: 0.0703 Microfarad per Square Centimeter --> 0.000703 Farad per Square Meter (Check conversion here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
Cox(vs)' = Sf*Coxide --> 1.5*0.000703
Evaluating ... ...
Cox(vs)' = 0.0010545
STEP 3: Convert Result to Output's Unit
0.0010545 Farad per Square Meter -->105.45 Nanofarad per Square Centimeter (Check conversion here)
105.45 Nanofarad per Square Centimeter <-- Oxide capacitance after voltage scaling
(Calculation completed in 00.004 seconds)
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## Credits

Created by Priyanka Patel
Lalbhai Dalpatbhai College of engineering (LDCE), Ahmedabad
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Dayananda Sagar College Of Engineering (DSCE), Banglore
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## < 25 VLSI Material Optimization Calculators

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PN Junction Depletion Depth with Source VLSI
P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))
Total Source Parasitic Capacitance
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Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage
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Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)
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Threshold Voltage when Source is at Body Potential
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DIBL Coefficient
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Threshold Voltage
Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)
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Gate Length using Gate Oxide Capacitance
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Oxide Capacitance after Full Scaling VLSI
Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor
Critical Voltage
Critical Voltage = Critical Electric Field*Electric Field Across Channel Length
Gate Oxide Thickness after Full Scaling VLSI
Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor
Intrinsic Gate Capacitance
MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width
Channel Length after Full Scaling VLSI
Channel Length after Full Scaling = Channel Length/Scaling Factor
Junction Depth after Full Scaling VLSI
Junction Depth after Full Scaling = Junction Depth/Scaling Factor
Channel Width after Full Scaling VLSI
Channel Width after Full Scaling = Channel Width/Scaling Factor
Mobility in Mosfet
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## Oxide Capacitance after Voltage Scaling VLSI Formula

Oxide capacitance after voltage scaling = Scaling Factor*Oxide Capacitance per Unit Area
Cox(vs)' = Sf*Coxide

## How does oxide capacitance impact the performance of MOSFETs in high-frequency applications?

In high-frequency applications, such as RF (radio frequency) circuits and high-speed digital circuits, oxide capacitance in MOSFETs plays a crucial role in determining the device's performance. The oxide capacitance affects the speed at which the transistor can switch states, as well as its ability to maintain signal integrity at higher frequencies.

## How to Calculate Oxide Capacitance after Voltage Scaling VLSI?

Oxide Capacitance after Voltage Scaling VLSI calculator uses Oxide capacitance after voltage scaling = Scaling Factor*Oxide Capacitance per Unit Area to calculate the Oxide capacitance after voltage scaling, The Oxide Capacitance after Voltage Scaling VLSI formula is defined as the capacitance associated with the oxide layer between the metal gate and the substrate after the device is scaled down by voltage scaling. Oxide capacitance after voltage scaling is denoted by Cox(vs)' symbol.

How to calculate Oxide Capacitance after Voltage Scaling VLSI using this online calculator? To use this online calculator for Oxide Capacitance after Voltage Scaling VLSI, enter Scaling Factor (Sf) & Oxide Capacitance per Unit Area (Coxide) and hit the calculate button. Here is how the Oxide Capacitance after Voltage Scaling VLSI calculation can be explained with given input values -> 1.1E+7 = 1.5*0.000703.

### FAQ

What is Oxide Capacitance after Voltage Scaling VLSI?
The Oxide Capacitance after Voltage Scaling VLSI formula is defined as the capacitance associated with the oxide layer between the metal gate and the substrate after the device is scaled down by voltage scaling and is represented as Cox(vs)' = Sf*Coxide or Oxide capacitance after voltage scaling = Scaling Factor*Oxide Capacitance per Unit Area. Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process & Oxide Capacitance per Unit Area is defined as the capacitance per unit area of the insulating oxide layer that separates the metal gate from the semiconductor material.
How to calculate Oxide Capacitance after Voltage Scaling VLSI?
The Oxide Capacitance after Voltage Scaling VLSI formula is defined as the capacitance associated with the oxide layer between the metal gate and the substrate after the device is scaled down by voltage scaling is calculated using Oxide capacitance after voltage scaling = Scaling Factor*Oxide Capacitance per Unit Area. To calculate Oxide Capacitance after Voltage Scaling VLSI, you need Scaling Factor (Sf) & Oxide Capacitance per Unit Area (Coxide). With our tool, you need to enter the respective value for Scaling Factor & Oxide Capacitance per Unit Area and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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