Power Density after Voltage Scaling VLSI Calculator

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VLSI Material Optimization

Analog VLSI Design

✖Power Density MOSFET is defined as a measure of power output per unit Area. It quantifies how much power is distributed within a given space.ⓘ Power Density MOSFET [P_D]			+10% -10%
✖Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.ⓘ Scaling Factor [Sf]			+10% -10%

✖Power Density after Voltage Scaling is defined as a measure of power output per unit Area. It quantifies power distribution within a given space when MOSFET is scaled down by voltage scaling method.ⓘ Power Density after Voltage Scaling VLSI [P_D']

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Power Density after Voltage Scaling VLSI

Formula

`("P"_{"D"}"'") = "P"_{"D"}*("Sf")^3`

Example

`"67.5"="20"*("1.5")^3`

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Power Density after Voltage Scaling VLSI Solution

STEP 0: Pre-Calculation Summary

Formula Used

Power Density after Voltage Scaling = Power Density MOSFET*(Scaling Factor)^3
P_D' = P_D*(Sf)^3
This formula uses 3 Variables

Variables Used

Power Density after Voltage Scaling - Power Density after Voltage Scaling is defined as a measure of power output per unit Area. It quantifies power distribution within a given space when MOSFET is scaled down by voltage scaling method.
Power Density MOSFET - Power Density MOSFET is defined as a measure of power output per unit Area. It quantifies how much power is distributed within a given space.
Scaling Factor - Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.

STEP 1: Convert Input(s) to Base Unit

Power Density MOSFET: 20 --> No Conversion Required
Scaling Factor: 1.5 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

P_D' = P_D*(Sf)^3 --> 20*(1.5)^3

Evaluating ... ...

P_D' = 67.5

STEP 3: Convert Result to Output's Unit

67.5 --> No Conversion Required

FINAL ANSWER

67.5 <-- Power Density after Voltage Scaling

(Calculation completed in 00.004 seconds)

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Credits

Created by Priyanka Patel

Lalbhai Dalpatbhai College of engineering (LDCE), Ahmedabad

Priyanka Patel has created this Calculator and 25+ more calculators!

Verified by Santhosh Yadav

Dayananda Sagar College Of Engineering (DSCE), Banglore

Santhosh Yadav has verified this Calculator and 50+ more calculators!

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Go Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))

Body Effect Coefficient

Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))

Junction Built-in Voltage VLSI

Go Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)

PN Junction Depletion Depth with Source VLSI

Go P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))

Total Source Parasitic Capacitance

Go Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)

Short Channel Saturation Current VLSI

Go Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage

Junction Current

Go Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)

Surface Potential

Go Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)

DIBL Coefficient

Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential

Threshold Voltage when Source is at Body Potential

Go Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage

Subthreshold Slope

Go Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)

Threshold Voltage

Go Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)

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Go Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)

Channel Charge

Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)

Gate Length using Gate Oxide Capacitance

Go Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)

Gate Oxide Capacitance

Go Capacitance of Gate Oxide Layer = Gate Capacitance/(Gate Width*Gate Length)

Oxide Capacitance after Full Scaling VLSI

Go Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor

Critical Voltage

Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

Gate Oxide Thickness after Full Scaling VLSI

Go Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor

Intrinsic Gate Capacitance

Go MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width

Channel Length after Full Scaling VLSI

Go Channel Length after Full Scaling = Channel Length/Scaling Factor

Junction Depth after Full Scaling VLSI

Go Junction Depth after Full Scaling = Junction Depth/Scaling Factor

Channel Width after Full Scaling VLSI

Go Channel Width after Full Scaling = Channel Width/Scaling Factor

Mobility in Mosfet

Go Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer

K-Prime

Go K Prime = Mobility in MOSFET*Capacitance of Gate Oxide Layer

Power Density after Voltage Scaling VLSI Formula

Power Density after Voltage Scaling = Power Density MOSFET*(Scaling Factor)^3
P_D' = P_D*(Sf)^3

What are the impacts of constant-voltage scaling?

Constant-voltage scaling increases the drain current density and the power density by a factor of S3. This large increase in current and power densities may eventually cause serious reliability problems for the scaled transistor, such as electromigration, hot-carrier degradation, oxide breakdown, and electrical over-stress.

How to Calculate Power Density after Voltage Scaling VLSI?

Power Density after Voltage Scaling VLSI calculator uses Power Density after Voltage Scaling = Power Density MOSFET*(Scaling Factor)^3 to calculate the Power Density after Voltage Scaling, The Power Density after Voltage Scaling VLSI formula is defined as a measure of power output per unit Area. It quantifies power distribution within a given space when MOSFET is scaled down by voltage scaling method. Power Density after Voltage Scaling is denoted by P_D' symbol.

How to calculate Power Density after Voltage Scaling VLSI using this online calculator? To use this online calculator for Power Density after Voltage Scaling VLSI, enter Power Density MOSFET (P_D) & Scaling Factor (Sf) and hit the calculate button. Here is how the Power Density after Voltage Scaling VLSI calculation can be explained with given input values -> 67.5 = 20*(1.5)^3.

FAQ

What is Power Density after Voltage Scaling VLSI?

The Power Density after Voltage Scaling VLSI formula is defined as a measure of power output per unit Area. It quantifies power distribution within a given space when MOSFET is scaled down by voltage scaling method and is represented as P_D' = P_D*(Sf)^3 or Power Density after Voltage Scaling = Power Density MOSFET*(Scaling Factor)^3. Power Density MOSFET is defined as a measure of power output per unit Area. It quantifies how much power is distributed within a given space & Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.

How to calculate Power Density after Voltage Scaling VLSI?

The Power Density after Voltage Scaling VLSI formula is defined as a measure of power output per unit Area. It quantifies power distribution within a given space when MOSFET is scaled down by voltage scaling method is calculated using Power Density after Voltage Scaling = Power Density MOSFET*(Scaling Factor)^3. To calculate Power Density after Voltage Scaling VLSI, you need Power Density MOSFET (P_D) & Scaling Factor (Sf). With our tool, you need to enter the respective value for Power Density MOSFET & Scaling Factor and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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