## Power Dissipation after Voltage Scaling VLSI Solution

STEP 0: Pre-Calculation Summary
Formula Used
Power Dissipation after Voltage Scaling = Scaling Factor*Power Dissipation
P' = Sf*P
This formula uses 3 Variables
Variables Used
Power Dissipation after Voltage Scaling - (Measured in Watt) - Power Dissipation after Voltage Scaling is defined as the how much power is dissipating after the scaling down MOSFET by voltage scaling method.
Scaling Factor - Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process.
Power Dissipation - (Measured in Watt) - Power dissipation is the conversion of electrical energy into heat within electronic components or circuits.
STEP 1: Convert Input(s) to Base Unit
Scaling Factor: 1.5 --> No Conversion Required
Power Dissipation: 3.3 Watt --> 3.3 Watt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
P' = Sf*P --> 1.5*3.3
Evaluating ... ...
P' = 4.95
STEP 3: Convert Result to Output's Unit
4.95 Watt --> No Conversion Required
4.95 Watt <-- Power Dissipation after Voltage Scaling
(Calculation completed in 00.004 seconds)
You are here -
Home ยป

## Credits

Created by Priyanka Patel
Lalbhai Dalpatbhai College of engineering (LDCE), Ahmedabad
Priyanka Patel has created this Calculator and 25+ more calculators!
Dayananda Sagar College Of Engineering (DSCE), Banglore
Santhosh Yadav has verified this Calculator and 50+ more calculators!

## < 25 VLSI Material Optimization Calculators

Bulk Depletion Region Charge Density VLSI
Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))
Body Effect Coefficient
Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))
Junction Built-in Voltage VLSI
Junction Built-in Voltage = ([BoltZ]*Temperature/[Charge-e])*ln(Acceptor Concentration*Donor concentration/(Intrinsic Concentration)^2)
PN Junction Depletion Depth with Source VLSI
P-n Junction Depletion Depth with Source = sqrt((2*[Permitivity-silicon]*[Permitivity-vacuum]*Junction Built-in Voltage)/([Charge-e]*Acceptor Concentration))
Total Source Parasitic Capacitance
Source Parasitic Capacitance = (Capacitance between Junction of Body and Source*Area of Source Diffusion)+(Capacitance between Junction of Body and Side wall*Sidewall Perimeter of Source Diffusion)
Short Channel Saturation Current VLSI
Short Channel Saturation Current = Channel Width*Saturation Electron Drift Velocity*Oxide Capacitance per Unit Area*Saturation Drain Source Voltage
Junction Current
Junction Current = (Static Power/Base Collector Voltage)-(Sub Threshold Current+Contention Current+Gate Current)
Surface Potential
Surface Potential = 2*Source Body Potential Difference*ln(Acceptor Concentration/Intrinsic Concentration)
Threshold Voltage when Source is at Body Potential
Threshold Voltage DIBL = DIBL Coefficient*Drain to Source Potential+Threshold Voltage
DIBL Coefficient
DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential
Threshold Voltage
Threshold Voltage = Gate to Channel Voltage-(Channel Charge/Gate Capacitance)
Gate Capacitance
Gate Capacitance = Channel Charge/(Gate to Channel Voltage-Threshold Voltage)
Subthreshold Slope
Sub Threshold Slope = Source Body Potential Difference*DIBL Coefficient*ln(10)
Channel Charge
Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)
Gate Length using Gate Oxide Capacitance
Gate Length = Gate Capacitance/(Capacitance of Gate Oxide Layer*Gate Width)
Gate Oxide Capacitance
Capacitance of Gate Oxide Layer = Gate Capacitance/(Gate Width*Gate Length)
Oxide Capacitance after Full Scaling VLSI
Oxide Capacitance after Full Scaling = Oxide Capacitance per Unit Area*Scaling Factor
Critical Voltage
Critical Voltage = Critical Electric Field*Electric Field Across Channel Length
Gate Oxide Thickness after Full Scaling VLSI
Gate Oxide Thickness after Full Scaling = Gate Oxide Thickness/Scaling Factor
Intrinsic Gate Capacitance
MOS Gate Overlap Capacitance = MOS Gate Capacitance*Transition Width
Channel Length after Full Scaling VLSI
Channel Length after Full Scaling = Channel Length/Scaling Factor
Junction Depth after Full Scaling VLSI
Junction Depth after Full Scaling = Junction Depth/Scaling Factor
Channel Width after Full Scaling VLSI
Channel Width after Full Scaling = Channel Width/Scaling Factor
Mobility in Mosfet
Mobility in MOSFET = K Prime/Capacitance of Gate Oxide Layer
K-Prime
K Prime = Mobility in MOSFET*Capacitance of Gate Oxide Layer

## Power Dissipation after Voltage Scaling VLSI Formula

Power Dissipation after Voltage Scaling = Scaling Factor*Power Dissipation
P' = Sf*P

## Why power dissipation increase after voltage scaling in electronic components or circuits?

Since the drain current is increased by a factor of Sf while the drain-to-source voltage remains unchanged, the power dissipation of the MOSFET increases by a factor of Sf.

## How to Calculate Power Dissipation after Voltage Scaling VLSI?

Power Dissipation after Voltage Scaling VLSI calculator uses Power Dissipation after Voltage Scaling = Scaling Factor*Power Dissipation to calculate the Power Dissipation after Voltage Scaling, The Power Dissipation after Voltage Scaling VLSI formula is defined as the how much power is dissipating after the scaling down MOSFET by voltage scaling method. Power Dissipation after Voltage Scaling is denoted by P' symbol.

How to calculate Power Dissipation after Voltage Scaling VLSI using this online calculator? To use this online calculator for Power Dissipation after Voltage Scaling VLSI, enter Scaling Factor (Sf) & Power Dissipation (P) and hit the calculate button. Here is how the Power Dissipation after Voltage Scaling VLSI calculation can be explained with given input values -> 4.95 = 1.5*3.3.

### FAQ

What is Power Dissipation after Voltage Scaling VLSI?
The Power Dissipation after Voltage Scaling VLSI formula is defined as the how much power is dissipating after the scaling down MOSFET by voltage scaling method and is represented as P' = Sf*P or Power Dissipation after Voltage Scaling = Scaling Factor*Power Dissipation. Scaling factor is defined as the ratio by which the dimensions of the transistor are changed during the design process & Power dissipation is the conversion of electrical energy into heat within electronic components or circuits.
How to calculate Power Dissipation after Voltage Scaling VLSI?
The Power Dissipation after Voltage Scaling VLSI formula is defined as the how much power is dissipating after the scaling down MOSFET by voltage scaling method is calculated using Power Dissipation after Voltage Scaling = Scaling Factor*Power Dissipation. To calculate Power Dissipation after Voltage Scaling VLSI, you need Scaling Factor (Sf) & Power Dissipation (P). With our tool, you need to enter the respective value for Scaling Factor & Power Dissipation and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
Let Others Know
โ