Saturation Voltage of MOSFET Calculator

✖Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior.ⓘ Gate-Source Voltage [V_gs]			+10% -10%
✖Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.ⓘ Threshold Voltage [V_th]			+10% -10%

✖Drain and source saturation voltage is the voltage at which the FET can no longer operate as an amplifier, and its output voltage becomes fixed at a maximum value.ⓘ Saturation Voltage of MOSFET [V_ds(s)]

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Formula

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Saturation Voltage of MOSFET

Formula

`"V"_{"ds(s)"} = "V"_{"gs"}-"V"_{"th"}`

Example

`"1.7V"="4V"-"2.3V"`

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Saturation Voltage of MOSFET Solution

STEP 0: Pre-Calculation Summary

Formula Used

Drain and Source Saturation Voltage = Gate-Source Voltage-Threshold Voltage
V_ds(s) = V_gs-V_th
This formula uses 3 Variables

Variables Used

Drain and Source Saturation Voltage - (Measured in Volt) - Drain and source saturation voltage is the voltage at which the FET can no longer operate as an amplifier, and its output voltage becomes fixed at a maximum value.
Gate-Source Voltage - (Measured in Volt) - Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior.
Threshold Voltage - (Measured in Volt) - Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

STEP 1: Convert Input(s) to Base Unit

Gate-Source Voltage: 4 Volt --> 4 Volt No Conversion Required
Threshold Voltage: 2.3 Volt --> 2.3 Volt No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

V_ds(s) = V_gs-V_th --> 4-2.3

Evaluating ... ...

V_ds(s) = 1.7

STEP 3: Convert Result to Output's Unit

1.7 Volt --> No Conversion Required

FINAL ANSWER

1.7 Volt <-- Drain and Source Saturation Voltage

(Calculation completed in 00.004 seconds)

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Birsa Institute of Technology (BIT), Sindri

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< 20 Voltage Calculators

Conductance of Channel of MOSFET using Gate to Source Voltage

Go Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage)

Common Gate Output Voltage

Go Output Voltage = -(Transconductance*Critical Voltage)*((Load Resistance*Gate Resistance)/(Gate Resistance+Load Resistance))

Output Voltage at Drain Q1 of MOSFET given Common-Mode Signal

Go Drain Voltage Q1 = -Output Resistance*(Transconductance*Common Mode Input Signal)/(1+(2*Transconductance*Output Resistance))

Voltage across Gate and Source of MOSFET on Operation with Differential Input Voltage

Go Gate-Source Voltage = Threshold Voltage+sqrt((2*DC Bias Current)/(Process Transconductance Parameter*Aspect Ratio))

Source Input Voltage

Go Source Input Voltage = Input Voltage*(Input Amplifier Resistance/(Input Amplifier Resistance+Equivalent Source Resistance))

Input Gate-to-Source Voltage

Go Critical Voltage = (Input Amplifier Resistance/(Input Amplifier Resistance+Equivalent Source Resistance)) *Input Voltage

Output Voltage at Drain Q2 of MOSFET given Common-Mode Signal

Go Drain Voltage Q2 = -(Output Resistance/((1/Transconductance)+2*Output Resistance))*Common Mode Input Signal

Voltage across Gate and Source of MOSFET given Input Current

Go Gate-Source Voltage = Input Current/(Angular Frequency*(Source Gate Capacitance+Gate-Drain Capacitance))

Positive Voltage given Device Parameter in MOSFET

Go Input Current = Gate-Source Voltage*(Angular Frequency*(Source Gate Capacitance+Gate-Drain Capacitance))

Overdrive Voltage when MOSFET Acts as Amplifier with Load Resistance

Go Transconductance = Total Current/(Common Mode Input Signal-(2*Total Current*Output Resistance))

Incremental Voltage Signal of Differential Amplifier

Go Common Mode Input Signal = (Total Current/Transconductance)+(2*Total Current*Output Resistance)

Voltage at Drain Q1 of MOSFET

Go Output Voltage = -(Total Load Resistance of MOSFET/(2*Output Resistance))*Common Mode Input Signal

Voltage at Drain Q2 in MOSFET

Go Output Voltage = -(Total Load Resistance of MOSFET/(2*Output Resistance))*Common Mode Input Signal

Saturation Voltage of MOSFET

Go Drain and Source Saturation Voltage = Gate-Source Voltage-Threshold Voltage

Voltage across Gate to Source of MOSFET on Differential Input Voltage given Overdrive Voltage

Go Gate-Source Voltage = Threshold Voltage+1.4*Effective Voltage

Threshold Voltage when MOSFET Acts as Amplifier

Go Threshold Voltage = Gate-Source Voltage-Effective Voltage

Treshold Voltage of MOSFET

Go Threshold Voltage = Gate-Source Voltage-Effective Voltage

Overdrive Voltage

Go Overdrive Voltage = (2*Drain Current)/Transconductance

Output Voltage at Drain Q1 of MOSFET

Go Drain Voltage Q1 = -(Output Resistance*Total Current)

Output Voltage at Drain Q2 of MOSFET

Go Drain Voltage Q2 = -(Output Resistance*Total Current)

< 15 MOSFET Characterstics Calculators

Conductance of Channel of MOSFET using Gate to Source Voltage

Go Conductance of Channel = Mobility of Electrons at Surface of Channel*Oxide Capacitance*Channel Width/Channel Length*(Gate-Source Voltage-Threshold Voltage)

Voltage Gain given Load Resistance of MOSFET

Go Voltage Gain = Transconductance*(1/(1/Load Resistance+1/Output Resistance))/(1+Transconductance*Source Resistance)

Transition Frequency of MOSFET

Go Transition Frequency = Transconductance/(2*pi*(Source Gate Capacitance+Gate-Drain Capacitance))

Maximum Voltage Gain at Bias Point

Go Maximum Voltage Gain = 2*(Supply Voltage-Effective Voltage)/(Effective Voltage)

Voltage Gain using Small Signal

Go Voltage Gain = Transconductance*1/(1/Load Resistance+1/Finite Resistance)

Gate to Source Channel Width of MOSFET

Go Channel Width = Overlap Capacitance/(Oxide Capacitance*Overlap Length)

Voltage Gain given Drain Voltage

Go Voltage Gain = (Drain Current*Load Resistance*2)/Effective Voltage

Body Effect on Transconductance

Go Body Transconductance = Change in Threshold to Base Voltage*Transconductance

Saturation Voltage of MOSFET

Go Drain and Source Saturation Voltage = Gate-Source Voltage-Threshold Voltage

Bias Voltage of MOSFET

Go Total Instantaneous Bias Voltage = DC Bias Voltage+DC Voltage

Maximum Voltage Gain given all Voltages

Go Maximum Voltage Gain = (Supply Voltage-0.3)/Thermal Voltage

Amplification Factor in Small Signal MOSFET Model

Go Amplification Factor = Transconductance*Output Resistance

Treshold Voltage of MOSFET

Go Threshold Voltage = Gate-Source Voltage-Effective Voltage

Transconductance in MOSFET

Go Transconductance = (2*Drain Current)/Overdrive Voltage

Conductance in Linear Resistance of MOSFET

Go Conductance of Channel = 1/Linear Resistance

Saturation Voltage of MOSFET Formula

Drain and Source Saturation Voltage = Gate-Source Voltage-Threshold Voltage
V_ds(s) = V_gs-V_th

What is saturation region of MOSFET?

In the saturation or linear region, the transistor will be biased so that the maximum amount of gate voltage is applied to the device which results in the channel resistance RDS(on being as small as possible with maximum drain current flowing through the MOSFET switch.

How to Calculate Saturation Voltage of MOSFET?

Saturation Voltage of MOSFET calculator uses Drain and Source Saturation Voltage = Gate-Source Voltage-Threshold Voltage to calculate the Drain and Source Saturation Voltage, The Saturation voltage of MOSFET is equal to the effective voltage or overdrive voltage of MOSFET. It is also equal to the difference of voltage across the oxide and threshold voltage. Drain and Source Saturation Voltage is denoted by V_ds(s) symbol.

How to calculate Saturation Voltage of MOSFET using this online calculator? To use this online calculator for Saturation Voltage of MOSFET, enter Gate-Source Voltage (V_gs) & Threshold Voltage (V_th) and hit the calculate button. Here is how the Saturation Voltage of MOSFET calculation can be explained with given input values -> 1.7 = 4-2.3.

FAQ

What is Saturation Voltage of MOSFET?

The Saturation voltage of MOSFET is equal to the effective voltage or overdrive voltage of MOSFET. It is also equal to the difference of voltage across the oxide and threshold voltage and is represented as V_ds(s) = V_gs-V_th or Drain and Source Saturation Voltage = Gate-Source Voltage-Threshold Voltage. Gate-source voltage is a critical parameter that affects the operation of an FET, and it is often used to control the device's behavior & Threshold voltage, also known as the gate threshold voltage or simply Vth, is a critical parameter in the operation of field-effect transistors, which are fundamental components in modern electronics.

How to calculate Saturation Voltage of MOSFET?

The Saturation voltage of MOSFET is equal to the effective voltage or overdrive voltage of MOSFET. It is also equal to the difference of voltage across the oxide and threshold voltage is calculated using Drain and Source Saturation Voltage = Gate-Source Voltage-Threshold Voltage. To calculate Saturation Voltage of MOSFET, you need Gate-Source Voltage (V_gs) & Threshold Voltage (V_th). With our tool, you need to enter the respective value for Gate-Source Voltage & Threshold Voltage and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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