Potential between Source to Body Calculator

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Analog VLSI Design

VLSI Material Optimization

✖Surface Potential is a key parameter in evaluating the DC property of thin-film transistors.ⓘ Surface Potential [Φ_s]			+10% -10%
✖Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.ⓘ Acceptor Concentration [N_A]			+10% -10%
✖Intrinsic Concentration refers to the concentration of charge carriers (electrons and holes) in an intrinsic semiconductor at thermal equilibrium.ⓘ Intrinsic Concentration [N_i]			+10% -10%

✖Source Body Potential Difference is calculated when an externally applied potential is equal to the sum of voltage drop across the oxide layer and the voltage drop across the semiconductor.ⓘ Potential between Source to Body [V_sb]

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Formula

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Potential between Source to Body

Formula

`"V"_{"sb"} = "Φ"_{"s"}/(2*ln("N"_{"A"}/"N"_{"i"}))`

Example

`"0.255133V"="6.86V"/(2*ln("1e+16/cm³"/"1.45e+10/cm³"))`

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Potential between Source to Body Solution

STEP 0: Pre-Calculation Summary

Formula Used

Source Body Potential Difference = Surface Potential/(2*ln(Acceptor Concentration/Intrinsic Concentration))
V_sb = Φ_s/(2*ln(N_A/N_i))
This formula uses 1 Functions, 4 Variables

Functions Used

ln - The natural logarithm, also known as the logarithm to the base e, is the inverse function of the natural exponential function., ln(Number)

Variables Used

Source Body Potential Difference - (Measured in Volt) - Source Body Potential Difference is calculated when an externally applied potential is equal to the sum of voltage drop across the oxide layer and the voltage drop across the semiconductor.
Surface Potential - (Measured in Volt) - Surface Potential is a key parameter in evaluating the DC property of thin-film transistors.
Acceptor Concentration - (Measured in 1 per Cubic Meter) - Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.
Intrinsic Concentration - (Measured in 1 per Cubic Meter) - Intrinsic Concentration refers to the concentration of charge carriers (electrons and holes) in an intrinsic semiconductor at thermal equilibrium.

STEP 1: Convert Input(s) to Base Unit

Surface Potential: 6.86 Volt --> 6.86 Volt No Conversion Required
Acceptor Concentration: 1E+16 1 per Cubic Centimeter --> 1E+22 1 per Cubic Meter (Check conversion here)
Intrinsic Concentration: 14500000000 1 per Cubic Centimeter --> 1.45E+16 1 per Cubic Meter (Check conversion here)

STEP 2: Evaluate Formula

Substituting Input Values in Formula

V_sb = Φ_s/(2*ln(N_A/N_i)) --> 6.86/(2*ln(1E+22/1.45E+16))

Evaluating ... ...

V_sb = 0.255133406849134

STEP 3: Convert Result to Output's Unit

0.255133406849134 Volt --> No Conversion Required

FINAL ANSWER

0.255133406849134 ≈ 0.255133 Volt <-- Source Body Potential Difference

(Calculation completed in 00.004 seconds)

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Created by Shobhit Dimri

Bipin Tripathi Kumaon Institute of Technology (BTKIT), Dwarahat

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< 16 Analog VLSI Design Calculators

Potential between Source to Body

Go Source Body Potential Difference = Surface Potential/(2*ln(Acceptor Concentration/Intrinsic Concentration))

Gate to Drain Capacitance

Go Gate to Drain Capacitance = Gate Capacitance-(Gate to Base Capacitance+Gate to Source Capacitance)

Gate to Base Capacitance

Go Gate to Base Capacitance = Gate Capacitance-(Gate to Source Capacitance+Gate to Drain Capacitance)

Gate to Source Capacitance

Go Gate to Source Capacitance = Gate Capacitance-(Gate to Base Capacitance+Gate to Drain Capacitance)

Drain Voltage

Go Base Collector Voltage = sqrt(Dynamic Power/(Frequency*Capacitance))

Potential from Drain to Source

Go Drain to Source Potential = (Threshold Voltage DIBL-Threshold Voltage)/DIBL Coefficient

Gate to Channel Voltage

Go Gate to Channel Voltage = (Channel Charge/Gate Capacitance)+Threshold Voltage

Gate to Collector Potential

Go Gate to Channel Voltage = (Gate to Source Potential+Gate to Drain Potential)/2

Gate to Source Potential

Go Gate to Source Potential = 2*Gate to Channel Voltage-Gate to Drain Potential

Gate to Drain Potential

Go Gate to Drain Potential = 2*Gate to Channel Voltage-Gate to Source Potential

Minimum High Output Voltage

Go Minimum High Output Voltage = High Noise Margin+Minimum High Input Voltage

Minimum High Input Voltage

Go Minimum High Input Voltage = Minimum High Output Voltage-High Noise Margin

High Noise Margin

Go High Noise Margin = Minimum High Output Voltage-Minimum High Input Voltage

Maximum Low Output Voltage

Go Maximum Low Output Voltage = Maximum Low Input Voltage-Low Noise Margin

Maximum Low Input Voltage

Go Maximum Low Input Voltage = Low Noise Margin+Maximum Low Output Voltage

Low Noise Margin

Go Low Noise Margin = Maximum Low Input Voltage-Maximum Low Output Voltage

Potential between Source to Body Formula

Source Body Potential Difference = Surface Potential/(2*ln(Acceptor Concentration/Intrinsic Concentration))
V_sb = Φ_s/(2*ln(N_A/N_i))

How do body affects the threshold voltage?

Transistors is a four terminals device. They are gate, source, drain, and body. When a voltage Vsb is applied between the source and body, it increases the amount of charge required to invert the channel, hence, it increases the threshold voltage. The body effect further degrades the performance of pass transistors trying to pass the weak value.

How to Calculate Potential between Source to Body?

Potential between Source to Body calculator uses Source Body Potential Difference = Surface Potential/(2*ln(Acceptor Concentration/Intrinsic Concentration)) to calculate the Source Body Potential Difference, Potential between Source to Body means the voltage difference or electrical potential difference between the electrical source and the conductive body or component that is connected to it within an electrical circuit. Source Body Potential Difference is denoted by V_sb symbol.

How to calculate Potential between Source to Body using this online calculator? To use this online calculator for Potential between Source to Body, enter Surface Potential (Φ_s), Acceptor Concentration (N_A) & Intrinsic Concentration (N_i) and hit the calculate button. Here is how the Potential between Source to Body calculation can be explained with given input values -> 0.255133 = 6.86/(2*ln(1E+22/1.45E+16)).

FAQ

What is Potential between Source to Body?

Potential between Source to Body means the voltage difference or electrical potential difference between the electrical source and the conductive body or component that is connected to it within an electrical circuit and is represented as V_sb = Φ_s/(2*ln(N_A/N_i)) or Source Body Potential Difference = Surface Potential/(2*ln(Acceptor Concentration/Intrinsic Concentration)). Surface Potential is a key parameter in evaluating the DC property of thin-film transistors, Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material & Intrinsic Concentration refers to the concentration of charge carriers (electrons and holes) in an intrinsic semiconductor at thermal equilibrium.

How to calculate Potential between Source to Body?

Potential between Source to Body means the voltage difference or electrical potential difference between the electrical source and the conductive body or component that is connected to it within an electrical circuit is calculated using Source Body Potential Difference = Surface Potential/(2*ln(Acceptor Concentration/Intrinsic Concentration)). To calculate Potential between Source to Body, you need Surface Potential (Φ_s), Acceptor Concentration (N_A) & Intrinsic Concentration (N_i). With our tool, you need to enter the respective value for Surface Potential, Acceptor Concentration & Intrinsic Concentration and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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