Payal Priya
Birsa Institute of Technology (BIT), Sindri
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Urvi Rathod
Vishwakarma Government Engineering College (VGEC), Ahmedabad
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11 Other formulas that you can solve using the same Inputs

Current entering drain terminal of MOSFET when Vgs is given
Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)*(Voltage between drain and source-(1/2*(Voltage between drain and source^2))) GO
Current entering drain terminal of MOSFET
Drain current=Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source GO
Current entering drain-source in triode region of NMOS
Drain current=Process transconductance parameter*Aspect Ratio*((Voltage across the oxide-Threshold voltage)*Voltage between drain and source-1/2*(Voltage between drain and source)^2) GO
Current entering drain-source in triode region of NMOS when effective voltage is given
Drain current=Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage-1/2*Voltage between drain and source)*Voltage between drain and source GO
Drain saturation current of MOSFET when Vgs is given
Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Voltage across the oxide-Threshold voltage)^2 GO
Current entering drain terminal of MOSFET at saturation
Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage)^2 GO
Drain saturation current of MOSFET
Saturation drain current=1/2*Process transconductance parameter*(Width of the Channel/Length of the Channel)*(Effective voltage or overdrive voltage)^2 GO
Current entering drain-source at saturation region of NMOS when effective voltage is given
Saturation drain current=1/2*Process transconductance parameter*Aspect Ratio*(Effective voltage or overdrive voltage)^2 GO
Current entering drain-source at saturation region of NMOS
Drain current=1/2*Process transconductance parameter*Aspect Ratio*(Voltage across the oxide-Threshold voltage)^2 GO
MOSFET transconductance parameter
MOSFET transconductance parameter=Mobility of electrons at the surface of channel*Oxide Capacitance*Aspect Ratio GO
MOSFET transconductance parameter in terms of process transconductance
MOSFET transconductance parameter=Process transconductance parameter*Aspect Ratio GO

2 Other formulas that calculate the same Output

MOSFET transconductance parameter
MOSFET transconductance parameter=Mobility of electrons at the surface of channel*Oxide Capacitance*Aspect Ratio GO
MOSFET transconductance parameter in terms of process transconductance
MOSFET transconductance parameter=Process transconductance parameter*Aspect Ratio GO

Transistor transconductance parameter of PMOS Formula

MOSFET transconductance parameter=Process transconductance parameter*Aspect Ratio
k<sub>n</sub>=k'<sub>n</sub>*AV
More formulas
Drain current in triode region of PMOS transistor GO
Drain current in triode region of PMOS transistor when V<sub>SD</sub> is given GO
Drain current in the saturation region of PMOS transistor GO
Drain current in the saturation region of PMOS transistor when V<sub>ov</sub> is given GO
Overall drain current of PMOS transistor GO
Overdrive voltage of PMOS GO

What is a MOSFET used for?

The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device that is widely used for switching purposes and for the amplification of electronic signals in electronic devices.

What are the types of MOSFETs?

There are two classes of MOSFETs. There is depletion mode and there is enhancement mode. Each class is available as n- or a p-channel, giving a total of four types of MOSFETs. Depletion mode comes in an N or a P and an enhancement mode comes in an N or a P.

How to Calculate Transistor transconductance parameter of PMOS?

Transistor transconductance parameter of PMOS calculator uses MOSFET transconductance parameter=Process transconductance parameter*Aspect Ratio to calculate the MOSFET transconductance parameter, The Transistor transconductance parameter of PMOS is the product of the process transconductance parameter kp and the transistor aspect ratio (W/L). MOSFET transconductance parameter and is denoted by kn symbol.

How to calculate Transistor transconductance parameter of PMOS using this online calculator? To use this online calculator for Transistor transconductance parameter of PMOS, enter Process transconductance parameter (k'n) and Aspect Ratio (AV) and hit the calculate button. Here is how the Transistor transconductance parameter of PMOS calculation can be explained with given input values -> 10 = 2*5.

FAQ

What is Transistor transconductance parameter of PMOS?
The Transistor transconductance parameter of PMOS is the product of the process transconductance parameter kp and the transistor aspect ratio (W/L) and is represented as kn=k'n*AV or MOSFET transconductance parameter=Process transconductance parameter*Aspect Ratio. Process transconductance parameter is the product of mobility of electrons in channel and oxide capacitance and Aspect Ratio is the ratio of the .width of the channel to the length of the channel.
How to calculate Transistor transconductance parameter of PMOS?
The Transistor transconductance parameter of PMOS is the product of the process transconductance parameter kp and the transistor aspect ratio (W/L) is calculated using MOSFET transconductance parameter=Process transconductance parameter*Aspect Ratio. To calculate Transistor transconductance parameter of PMOS, you need Process transconductance parameter (k'n) and Aspect Ratio (AV). With our tool, you need to enter the respective value for Process transconductance parameter and Aspect Ratio and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
How many ways are there to calculate MOSFET transconductance parameter?
In this formula, MOSFET transconductance parameter uses Process transconductance parameter and Aspect Ratio. We can use 2 other way(s) to calculate the same, which is/are as follows -
  • MOSFET transconductance parameter=Mobility of electrons at the surface of channel*Oxide Capacitance*Aspect Ratio
  • MOSFET transconductance parameter=Process transconductance parameter*Aspect Ratio
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