Drain Current given NMOS Operates as Voltage-Controlled Current Source Calculator

✖The Process Transconductance Parameter in PMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.ⓘ Process Transconductance Parameter in PMOS [k'_p]			+10% -10%
✖Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.ⓘ Aspect Ratio [WL]			+10% -10%

✖Transconductance parameter is a crucial parameter in electronic devices and circuits, which helps to describe and quantify the input-output relationship between voltage and current.ⓘ Drain Current given NMOS Operates as Voltage-Controlled Current Source [k_n]

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Drain Current given NMOS Operates as Voltage-Controlled Current Source

Formula

`"k"_{"n"} = "k'"_{"p"}*"WL"`

Example

`"0.00021A/V²"="2.1mS"*"0.1"`

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Drain Current given NMOS Operates as Voltage-Controlled Current Source Solution

STEP 0: Pre-Calculation Summary

Formula Used

Transconductance Parameter = Process Transconductance Parameter in PMOS*Aspect Ratio
k_n = k'_p*WL
This formula uses 3 Variables

Variables Used

Transconductance Parameter - (Measured in Ampere per Square Volt) - Transconductance parameter is a crucial parameter in electronic devices and circuits, which helps to describe and quantify the input-output relationship between voltage and current.
Process Transconductance Parameter in PMOS - (Measured in Siemens) - The Process Transconductance Parameter in PMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor.
Aspect Ratio - Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.

STEP 1: Convert Input(s) to Base Unit

Process Transconductance Parameter in PMOS: 2.1 Millisiemens --> 0.0021 Siemens (Check conversion here)
Aspect Ratio: 0.1 --> No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

k_n = k'_p*WL --> 0.0021*0.1

Evaluating ... ...

k_n = 0.00021

STEP 3: Convert Result to Output's Unit

0.00021 Ampere per Square Volt --> No Conversion Required

FINAL ANSWER

0.00021 Ampere per Square Volt <-- Transconductance Parameter

(Calculation completed in 00.020 seconds)

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< 17 N-Channel Enhancement Calculators

Current Entering Drain-Source in Triode Region of NMOS

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*(Drain Source Voltage)^2)

Current Entering Drain Terminal of NMOS given Gate Source Voltage

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*((Gate Source Voltage-Threshold Voltage)*Drain Source Voltage-1/2*Drain Source Voltage^2)

Body Effect in NMOS

Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))

Current Entering Drain Terminal of NMOS

Go Drain Current in NMOS = Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*Drain Source Voltage*(Overdrive Voltage in NMOS-1/2*Drain Source Voltage)

NMOS as Linear Resistance

Go Linear Resistance = Length of the Channel/(Mobility of Electrons at Surface of Channel*Oxide Capacitance*Width of Channel*(Gate Source Voltage-Threshold Voltage))

Drain Current when NMOS Operates as Voltage-Controlled Current Source

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Current Entering Drain-Source at Saturation Region of NMOS

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Gate Source Voltage-Threshold Voltage)^2

Fabrication Process Parameter of NMOS

Go Fabrication Process Parameter = sqrt(2*[Charge-e]*Doping Concentration of P Substrate*[Permitivity-vacuum])/Oxide Capacitance

Current Entering Drain-Source at Saturation Region of NMOS given Effective Voltage

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Overdrive Voltage in NMOS)^2

Current Entering Drain Source at Boundary of Saturation and Triode Region of NMOS

Go Drain Current in NMOS = 1/2*Process Transconductance Parameter in NMOS*Width of Channel/Length of the Channel*(Drain Source Voltage)^2

Electron Drift Velocity of Channel in NMOS Transistor

Go Electron Drift Velocity = Mobility of Electrons at Surface of Channel*Electric Field across Length of Channel

Total Power Supplied in NMOS

Go Power Supplied = Supply Voltage*(Drain Current in NMOS+Current)

Drain Current given NMOS Operates as Voltage-Controlled Current Source

Go Transconductance Parameter = Process Transconductance Parameter in PMOS*Aspect Ratio

Output Resistance of Current Source NMOS given Drain Current

Go Output Resistance = Device Parameter/Drain Current without Channel Length Modulation

Total Power Dissipated in NMOS

Go Power Dissipated = Drain Current in NMOS^2*ON Channel Resistance

Positive Voltage given Channel Length in NMOS

Go Voltage = Device Parameter*Length of the Channel

Oxide Capacitance of NMOS

Go Oxide Capacitance = (3.45*10^(-11))/Oxide Thickness

Drain Current given NMOS Operates as Voltage-Controlled Current Source Formula

Transconductance Parameter = Process Transconductance Parameter in PMOS*Aspect Ratio
k_n = k'_p*WL

What is a MOSFET used for?

The MOSFET (Metal Oxide Semiconductor Field Effect Transistor) transistor is a semiconductor device that is widely used for switching purposes and for the amplification of electronic signals in electronic devices.

What are the types of MOSFETs?

There are two classes of MOSFETs. There is depletion mode and there is enhancement mode. Each class is available as n- or a p-channel, giving a total of four types of MOSFETs. Depletion mode comes in an N or a P and an enhancement mode comes in an N or a P.

How to Calculate Drain Current given NMOS Operates as Voltage-Controlled Current Source?

Drain Current given NMOS Operates as Voltage-Controlled Current Source calculator uses Transconductance Parameter = Process Transconductance Parameter in PMOS*Aspect Ratio to calculate the Transconductance Parameter, The Drain Current given NMOS Operates as Voltage-Controlled Current Source is the product of the process transconductance parameter k_p and the transistor aspect ratio (W/L). Transconductance Parameter is denoted by k_n symbol.

How to calculate Drain Current given NMOS Operates as Voltage-Controlled Current Source using this online calculator? To use this online calculator for Drain Current given NMOS Operates as Voltage-Controlled Current Source, enter Process Transconductance Parameter in PMOS (k'_p) & Aspect Ratio (WL) and hit the calculate button. Here is how the Drain Current given NMOS Operates as Voltage-Controlled Current Source calculation can be explained with given input values -> 0.00021 = 0.0021*0.1.

FAQ

What is Drain Current given NMOS Operates as Voltage-Controlled Current Source?

The Drain Current given NMOS Operates as Voltage-Controlled Current Source is the product of the process transconductance parameter k_p and the transistor aspect ratio (W/L) and is represented as k_n = k'_p*WL or Transconductance Parameter = Process Transconductance Parameter in PMOS*Aspect Ratio. The Process Transconductance Parameter in PMOS (PTM) is a parameter used in semiconductor device modeling to characterize the performance of a transistor & Aspect ratio is defined as the ratio of the width of the transistor's channel to its length. It is the ratio of the width of the gate to the distance btw the source & drain regions of the transistor.

How to calculate Drain Current given NMOS Operates as Voltage-Controlled Current Source?

The Drain Current given NMOS Operates as Voltage-Controlled Current Source is the product of the process transconductance parameter k_p and the transistor aspect ratio (W/L) is calculated using Transconductance Parameter = Process Transconductance Parameter in PMOS*Aspect Ratio. To calculate Drain Current given NMOS Operates as Voltage-Controlled Current Source, you need Process Transconductance Parameter in PMOS (k'_p) & Aspect Ratio (WL). With our tool, you need to enter the respective value for Process Transconductance Parameter in PMOS & Aspect Ratio and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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