Work Function in MOSFET Solution

STEP 0: Pre-Calculation Summary
Formula Used
Work Function = Vaccum Level+(Conduction Band Energy Level-Fermi Level)
S = +(Ec-EF)
This formula uses 4 Variables
Variables Used
Work Function - (Measured in Volt) - Work Function is the energy required for an electron to move from the Fermi level into free space.
Vaccum Level - (Measured in Joule) - Vaccum Level is a theoretical energy level that provides a baseline for understanding energy levels in the semiconductor and metal regions of the MOSFET.
Conduction Band Energy Level - (Measured in Joule) - Conduction Band Energy Level is an energy band within the semiconductor material where electrons can move freely and contribute to electrical conduction.
Fermi Level - (Measured in Joule) - Fermi Level represents the energy level at which electrons have a 50% probability of being occupied at absolute zero temperature.
STEP 1: Convert Input(s) to Base Unit
Vaccum Level: 5.1 Electron-Volt --> 8.17110438300004E-19 Joule (Check conversion ​here)
Conduction Band Energy Level: 3.01 Electron-Volt --> 4.82255376330002E-19 Joule (Check conversion ​here)
Fermi Level: 5.24 Electron-Volt --> 8.39540920920004E-19 Joule (Check conversion ​here)
STEP 2: Evaluate Formula
Substituting Input Values in Formula
S = qχ+(Ec-EF) --> 8.17110438300004E-19+(4.82255376330002E-19-8.39540920920004E-19)
Evaluating ... ...
S = 4.59824893710002E-19
STEP 3: Convert Result to Output's Unit
4.59824893710002E-19 Volt --> No Conversion Required
FINAL ANSWER
4.59824893710002E-19 4.6E-19 Volt <-- Work Function
(Calculation completed in 00.021 seconds)

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Created by banuprakash
Dayananda Sagar College of Engineering (DSCE), Bangalore
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Heritage Insitute of technology (HITK), Kolkata
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5 MOS Transistor Calculators

Sidewall Voltage Equivalence Factor
​ Go Sidewall Voltage Equivalence Factor = -(2*sqrt(Built in Potential of Sidewall Junctions)/(Final Voltage-Initial Voltage)*(sqrt(Built in Potential of Sidewall Junctions-Final Voltage)-sqrt(Built in Potential of Sidewall Junctions-Initial Voltage)))
Fermi Potential for P Type
​ Go Fermi Potential for P Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Intrinsic Carrier Concentration/Doping Concentration of Acceptor)
Fermi Potential for N Type
​ Go Fermi Potential for N Type = ([BoltZ]*Absolute Temperature)/[Charge-e]*ln(Donor Dopant Concentration/Intrinsic Carrier Concentration)
Equivalent Large Signal Junction Capacitance
​ Go Equivalent Large Signal Junction Capacitance = Perimeter of Sidewall*Sidewall Junction Capacitance*Sidewall Voltage Equivalence Factor
Zero Bias Sidewall Junction Capacitance per Unit Length
​ Go Sidewall Junction Capacitance = Zero Bias Sidewall Junction Potential*Depth of Sidewall

Work Function in MOSFET Formula

Work Function = Vaccum Level+(Conduction Band Energy Level-Fermi Level)
S = +(Ec-EF)

What is the significance of the work function in MOSFET design?

The work function is crucial in MOSFET design as it determines the energy barrier for electron or hole movement between the metal gate and the semiconductor. It affects the device's electrical characteristics and performance.

How to Calculate Work Function in MOSFET?

Work Function in MOSFET calculator uses Work Function = Vaccum Level+(Conduction Band Energy Level-Fermi Level) to calculate the Work Function, The Work Function in MOSFET formula is defined as the energy required to move an electron from the Fermi level of the metal gate electrode to the conduction or valence band of the semiconductor. Work Function is denoted by S symbol.

How to calculate Work Function in MOSFET using this online calculator? To use this online calculator for Work Function in MOSFET, enter Vaccum Level (qχ), Conduction Band Energy Level (Ec) & Fermi Level (EF) and hit the calculate button. Here is how the Work Function in MOSFET calculation can be explained with given input values -> 4.6E-19 = 8.17110438300004E-19+(4.82255376330002E-19-8.39540920920004E-19).

FAQ

What is Work Function in MOSFET?
The Work Function in MOSFET formula is defined as the energy required to move an electron from the Fermi level of the metal gate electrode to the conduction or valence band of the semiconductor and is represented as S = qχ+(Ec-EF) or Work Function = Vaccum Level+(Conduction Band Energy Level-Fermi Level). Vaccum Level is a theoretical energy level that provides a baseline for understanding energy levels in the semiconductor and metal regions of the MOSFET, Conduction Band Energy Level is an energy band within the semiconductor material where electrons can move freely and contribute to electrical conduction & Fermi Level represents the energy level at which electrons have a 50% probability of being occupied at absolute zero temperature.
How to calculate Work Function in MOSFET?
The Work Function in MOSFET formula is defined as the energy required to move an electron from the Fermi level of the metal gate electrode to the conduction or valence band of the semiconductor is calculated using Work Function = Vaccum Level+(Conduction Band Energy Level-Fermi Level). To calculate Work Function in MOSFET, you need Vaccum Level (qχ), Conduction Band Energy Level (Ec) & Fermi Level (EF). With our tool, you need to enter the respective value for Vaccum Level, Conduction Band Energy Level & Fermi Level and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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