Backgate Effect Parameter in PMOS Calculator

✖Donor concentration is semiconductor physics and refers to the number of donor impurity atoms per unit volume of a semiconductor material.ⓘ Donor Concentration [N_d]			+10% -10%
✖Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.ⓘ Oxide Capacitance [C_ox]			+10% -10%

✖Backgate effect parameter refers to a phenomenon that occurs in field-effect transistors, which are electronic devices used for amplification, switching, and other purposes.ⓘ Backgate Effect Parameter in PMOS [γ_p]

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Formula

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Backgate Effect Parameter in PMOS

Formula

`"γ"_{"p"} = sqrt(2*"[Permitivity-vacuum]"*"[Charge-e]"*"N"_{"d"})/"C"_{"ox"}`

Example

`"0.029015"=sqrt(2*"[Permitivity-vacuum]"*"[Charge-e]"*"1.9e20/m³")/"0.0008F"`

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Backgate Effect Parameter in PMOS Solution

STEP 0: Pre-Calculation Summary

Formula Used

Backgate Effect Parameter = sqrt(2*[Permitivity-vacuum]*[Charge-e]*Donor Concentration)/Oxide Capacitance
γ_p = sqrt(2*[Permitivity-vacuum]*[Charge-e]*N_d)/C_ox
This formula uses 2 Constants, 1 Functions, 3 Variables

Constants Used

[Permitivity-vacuum] - Permittivity of vacuum Value Taken As 8.85E-12
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19

Functions Used

sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)

Variables Used

Backgate Effect Parameter - Backgate effect parameter refers to a phenomenon that occurs in field-effect transistors, which are electronic devices used for amplification, switching, and other purposes.
Donor Concentration - (Measured in 1 per Cubic Meter) - Donor concentration is semiconductor physics and refers to the number of donor impurity atoms per unit volume of a semiconductor material.
Oxide Capacitance - (Measured in Farad) - Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.

STEP 1: Convert Input(s) to Base Unit

Donor Concentration: 1.9E+20 1 per Cubic Meter --> 1.9E+20 1 per Cubic Meter No Conversion Required
Oxide Capacitance: 0.0008 Farad --> 0.0008 Farad No Conversion Required

STEP 2: Evaluate Formula

Substituting Input Values in Formula

γ_p = sqrt(2*[Permitivity-vacuum]*[Charge-e]*N_d)/C_ox --> sqrt(2*[Permitivity-vacuum]*[Charge-e]*1.9E+20)/0.0008

Evaluating ... ...

γ_p = 0.0290154053183929

STEP 3: Convert Result to Output's Unit

0.0290154053183929 --> No Conversion Required

FINAL ANSWER

0.0290154053183929 ≈ 0.029015 <-- Backgate Effect Parameter

(Calculation completed in 00.004 seconds)

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Home » Engineering » Electronics » MOSFET » Analog Electronics » P-Channel Enhancement » Backgate Effect Parameter in PMOS

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< 14 P-Channel Enhancement Calculators

Overall Drain Current of PMOS Transistor

Go Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2*(1+Voltage between Drain and Source/modulus(Early Voltage))

Drain Current in Triode Region of PMOS Transistor

Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*((Voltage between Gate and Source-modulus(Threshold Voltage))*Voltage between Drain and Source-1/2*(Voltage between Drain and Source)^2)

Body Effect in PMOS

Go Change in Threshold Voltage = Threshold Voltage+Fabrication Process Parameter*(sqrt(2*Physical Parameter+Voltage between Body and Source)-sqrt(2*Physical Parameter))

Drain Current in Triode Region of PMOS Transistor given Vsd

Go Drain Current = Process Transconductance Parameter in PMOS*Aspect Ratio*(modulus(Effective Voltage)-1/2*Voltage between Drain and Source)*Voltage between Drain and Source

Drain Current in Saturation Region of PMOS Transistor

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Voltage between Gate and Source-modulus(Threshold Voltage))^2

Backgate Effect Parameter in PMOS

Go Backgate Effect Parameter = sqrt(2*[Permitivity-vacuum]*[Charge-e]*Donor Concentration)/Oxide Capacitance

Drain Current from Source to Drain

Go Drain Current = (Width of Junction*Inversion Layer Charge*Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel)

Inversion Layer Charge at Pinch-Off Condition in PMOS

Go Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage-Voltage between Drain and Source)

Drain Current in Saturation Region of PMOS Transistor given Vov

Go Saturation Drain Current = 1/2*Process Transconductance Parameter in PMOS*Aspect Ratio*(Effective Voltage)^2

Inversion Layer Charge in PMOS

Go Inversion Layer Charge = -Oxide Capacitance*(Voltage between Gate and Source-Threshold Voltage)

Current in Inversion Channel of PMOS

Go Drain Current = (Width of Junction*Inversion Layer Charge*Drift Velocity of Inversion)

Current in Inversion Channel of PMOS given Mobility

Go Drift Velocity of Inversion = Mobility of Holes in Channel*Horizontal Component of Electric Field in Channel

Overdrive Voltage of PMOS

Go Effective Voltage = Voltage between Gate and Source-modulus(Threshold Voltage)

Process Transconductance Parameter of PMOS

Go Process Transconductance Parameter in PMOS = Mobility of Holes in Channel*Oxide Capacitance

Backgate Effect Parameter in PMOS Formula

Backgate Effect Parameter = sqrt(2*[Permitivity-vacuum]*[Charge-e]*Donor Concentration)/Oxide Capacitance
γ_p = sqrt(2*[Permitivity-vacuum]*[Charge-e]*N_d)/C_ox

What is Back-gate effect in PMOS?

The "back-gate effect" refers to the phenomenon where the voltage applied to the back gate of a PMOS transistor affects its threshold voltage (Vt) and therefore its performance. The back gate effect can have a significant impact on the operation of PMOS devices, especially for those with smaller geometries.

How to Calculate Backgate Effect Parameter in PMOS?

Backgate Effect Parameter in PMOS calculator uses Backgate Effect Parameter = sqrt(2*[Permitivity-vacuum]*[Charge-e]*Donor Concentration)/Oxide Capacitance to calculate the Backgate Effect Parameter, The Backgate Effect Parameter in PMOS formula represents the change in threshold voltage for a given change in back-gate voltage. Backgate Effect Parameter is denoted by γ_p symbol.

How to calculate Backgate Effect Parameter in PMOS using this online calculator? To use this online calculator for Backgate Effect Parameter in PMOS, enter Donor Concentration (N_d) & Oxide Capacitance (C_ox) and hit the calculate button. Here is how the Backgate Effect Parameter in PMOS calculation can be explained with given input values -> 0.029015 = sqrt(2*[Permitivity-vacuum]*[Charge-e]*1.9E+20)/0.0008.

FAQ

What is Backgate Effect Parameter in PMOS?

The Backgate Effect Parameter in PMOS formula represents the change in threshold voltage for a given change in back-gate voltage and is represented as γ_p = sqrt(2*[Permitivity-vacuum]*[Charge-e]*N_d)/C_ox or Backgate Effect Parameter = sqrt(2*[Permitivity-vacuum]*[Charge-e]*Donor Concentration)/Oxide Capacitance. Donor concentration is semiconductor physics and refers to the number of donor impurity atoms per unit volume of a semiconductor material & Oxide capacitance is an important parameter that affects the performance of MOS devices, such as the speed and power consumption of integrated circuits.

How to calculate Backgate Effect Parameter in PMOS?

The Backgate Effect Parameter in PMOS formula represents the change in threshold voltage for a given change in back-gate voltage is calculated using Backgate Effect Parameter = sqrt(2*[Permitivity-vacuum]*[Charge-e]*Donor Concentration)/Oxide Capacitance. To calculate Backgate Effect Parameter in PMOS, you need Donor Concentration (N_d) & Oxide Capacitance (C_ox). With our tool, you need to enter the respective value for Donor Concentration & Oxide Capacitance and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.

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