Bulk Depletion Region Charge Density VLSI Solution

STEP 0: Pre-Calculation Summary
Formula Used
Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))
QB0 = -(1-((ΔLs+ΔLD)/(2*L)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*NA*abs(2*Φs))
This formula uses 3 Constants, 2 Functions, 6 Variables
Constants Used
[Permitivity-silicon] - Permittivity of silicon Value Taken As 11.7
[Permitivity-vacuum] - Permittivity of vacuum Value Taken As 8.85E-12
[Charge-e] - Charge of electron Value Taken As 1.60217662E-19
Functions Used
sqrt - A square root function is a function that takes a non-negative number as an input and returns the square root of the given input number., sqrt(Number)
abs - The absolute value of a number is its distance from zero on the number line. It's always a positive value, as it represents the magnitude of a number without considering its direction., abs(Number)
Variables Used
Bulk Depletion Region Charge Density - (Measured in Coulomb per Square Meter) - Bulk Depletion Region Charge Density is defined as electric charge per unit area associated with the depletion region in the bulk of a semiconductor device.
Lateral Extent of Depletion Region with Source - (Measured in Meter) - Lateral Extent of Depletion Region with Source the horizontal distance across which the depletion region extends laterally from the source terminal in a semiconductor device.
Lateral Extent of Depletion Region with Drain - (Measured in Meter) - Lateral Extent of Depletion Region with Drain the horizontal distance across which the depletion region extends laterally from the drain terminal in a semiconductor device.
Channel Length - (Measured in Meter) - Channel Length refers to the physical length of the semiconductor material between the source and drain terminals within the transistor structure.
Acceptor Concentration - (Measured in 1 per Cubic Meter) - Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material.
Surface Potential - (Measured in Volt) - Surface Potential is a key parameter in evaluating the DC property of thin-film transistors.
STEP 1: Convert Input(s) to Base Unit
Lateral Extent of Depletion Region with Source: 0.1 Micrometer --> 1E-07 Meter (Check conversion ​here)
Lateral Extent of Depletion Region with Drain: 0.2 Micrometer --> 2E-07 Meter (Check conversion ​here)
Channel Length: 2.5 Micrometer --> 2.5E-06 Meter (Check conversion ​here)
Acceptor Concentration: 1E+16 1 per Cubic Centimeter --> 1E+22 1 per Cubic Meter (Check conversion ​here)
Surface Potential: 6.86 Volt --> 6.86 Volt No Conversion Required
STEP 2: Evaluate Formula
Substituting Input Values in Formula
QB0 = -(1-((ΔLs+ΔLD)/(2*L)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*NA*abs(2*Φs)) --> -(1-((1E-07+2E-07)/(2*2.5E-06)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*1E+22*abs(2*6.86))
Evaluating ... ...
QB0 = -0.00200557851391776
STEP 3: Convert Result to Output's Unit
-0.00200557851391776 Coulomb per Square Meter -->-0.200557851391776 Microcoulomb per Square Centimeter (Check conversion ​here)
-0.200557851391776 -0.200558 Microcoulomb per Square Centimeter <-- Bulk Depletion Region Charge Density
(Calculation completed in 00.004 seconds)
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<VLSI Material Optimization Calculators

Body Effect Coefficient
​ Go Body Effect Coefficient = modulus((Threshold Voltage-Threshold Voltage DIBL)/(sqrt(Surface Potential+(Source Body Potential Difference))-sqrt(Surface Potential)))
DIBL Coefficient
​ Go DIBL Coefficient = (Threshold Voltage DIBL-Threshold Voltage)/Drain to Source Potential
Channel Charge
​ Go Channel Charge = Gate Capacitance*(Gate to Channel Voltage-Threshold Voltage)
Critical Voltage
​ Go Critical Voltage = Critical Electric Field*Electric Field Across Channel Length

Bulk Depletion Region Charge Density VLSI Formula

Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential))
QB0 = -(1-((ΔLs+ΔLD)/(2*L)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*NA*abs(2*Φs))

How does Bulk Depletion Region Charge Density affect semiconductor devices in VLSI?

Bulk Depletion Region Charge Density influences the electrical characteristics of semiconductor devices, including capacitance, threshold voltage, and overall device performance.

How to Calculate Bulk Depletion Region Charge Density VLSI?

Bulk Depletion Region Charge Density VLSI calculator uses Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential)) to calculate the Bulk Depletion Region Charge Density, The Bulk Depletion Region Charge Density VLSI formula is defined as electric charge per unit area associated with the depletion region in the bulk of a semiconductor device. Bulk Depletion Region Charge Density is denoted by QB0 symbol.

How to calculate Bulk Depletion Region Charge Density VLSI using this online calculator? To use this online calculator for Bulk Depletion Region Charge Density VLSI, enter Lateral Extent of Depletion Region with Source (ΔLs), Lateral Extent of Depletion Region with Drain (ΔLD), Channel Length (L), Acceptor Concentration (NA) & Surface Potential s) and hit the calculate button. Here is how the Bulk Depletion Region Charge Density VLSI calculation can be explained with given input values -> -20.055785 = -(1-((1E-07+2E-07)/(2*2.5E-06)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*1E+22*abs(2*6.86)).

FAQ

What is Bulk Depletion Region Charge Density VLSI?
The Bulk Depletion Region Charge Density VLSI formula is defined as electric charge per unit area associated with the depletion region in the bulk of a semiconductor device and is represented as QB0 = -(1-((ΔLs+ΔLD)/(2*L)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*NA*abs(2*Φs)) or Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential)). Lateral Extent of Depletion Region with Source the horizontal distance across which the depletion region extends laterally from the source terminal in a semiconductor device, Lateral Extent of Depletion Region with Drain the horizontal distance across which the depletion region extends laterally from the drain terminal in a semiconductor device, Channel Length refers to the physical length of the semiconductor material between the source and drain terminals within the transistor structure, Acceptor Concentration refers to the concentration of acceptor dopant atoms in a semiconductor material & Surface Potential is a key parameter in evaluating the DC property of thin-film transistors.
How to calculate Bulk Depletion Region Charge Density VLSI?
The Bulk Depletion Region Charge Density VLSI formula is defined as electric charge per unit area associated with the depletion region in the bulk of a semiconductor device is calculated using Bulk Depletion Region Charge Density = -(1-((Lateral Extent of Depletion Region with Source+Lateral Extent of Depletion Region with Drain)/(2*Channel Length)))*sqrt(2*[Charge-e]*[Permitivity-silicon]*[Permitivity-vacuum]*Acceptor Concentration*abs(2*Surface Potential)). To calculate Bulk Depletion Region Charge Density VLSI, you need Lateral Extent of Depletion Region with Source (ΔLs), Lateral Extent of Depletion Region with Drain (ΔLD), Channel Length (L), Acceptor Concentration (NA) & Surface Potential s). With our tool, you need to enter the respective value for Lateral Extent of Depletion Region with Source, Lateral Extent of Depletion Region with Drain, Channel Length, Acceptor Concentration & Surface Potential and hit the calculate button. You can also select the units (if any) for Input(s) and the Output as well.
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